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FS50VS-3-VB Product details
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FS50VS-3-VB MOSFET Product Introduction
FS50VS-3-VB is a high-performance single N-channel MOSFET in TO-263 package, designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V. Its advanced Trench technology and low on-resistance enable it to perform well in switching and power conversion applications. FS50VS-3-VB can not only withstand higher voltages and currents, but also provide excellent thermal performance and stability, making it suitable for a variety of high-power electronic systems.
FS50VS-3-VB is a high-performance single N-channel MOSFET in TO-263 package, designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V. Its advanced Trench technology and low on-resistance enable it to perform well in switching and power conversion applications. FS50VS-3-VB can not only withstand higher voltages and currents, but also provide excellent thermal performance and stability, making it suitable for a variety of high-power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | 7.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 7.5mΩ @ VGS=10V
- **Drain current (ID)**: 128A
- **Technology**: Trench
- **Turning delay time (td(on))**: 15ns
- **Turning delay time (td(off))**: 35ns
- **Power consumption (Pd)**: 200W
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 7.5mΩ @ VGS=10V
- **Drain current (ID)**: 128A
- **Technology**: Trench
- **Turning delay time (td(on))**: 15ns
- **Turning delay time (td(off))**: 35ns
- **Power consumption (Pd)**: 200W
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Application fields and modules
FS50VS-3-VB MOSFET plays a key role in a variety of high-power and high-efficiency applications. The following are some typical application fields and modules:
1. **Power converter**: In high-efficiency switching power supplies (SMPS) and DC-DC converters, FS50VS-3-VB can effectively handle high current and high voltage, provide excellent power conversion efficiency and stability, and is suitable for industrial power supplies and computer power management systems.
2. **Electric vehicles**: In the power system of electric vehicles, this MOSFET is used in high-power inverters and motor drives, and can withstand high voltage and high current operations, ensuring efficient operation of electric vehicles under various working conditions.
3. **Inverter**: In solar photovoltaic inverters, FS50VS-3-VB can be used for high-voltage DC to AC conversion, providing efficient energy conversion and reliable performance, supporting efficient power generation of solar systems.
4. **Power amplifier**: In high-power radio and communication equipment, this device can be used in power amplifiers to provide stable power output and low loss, ensuring the quality and stability of signal transmission.
FS50VS-3-VB MOSFET is an ideal choice for many high-power electronic applications due to its superior performance and wide applicability.
FS50VS-3-VB MOSFET plays a key role in a variety of high-power and high-efficiency applications. The following are some typical application fields and modules:
1. **Power converter**: In high-efficiency switching power supplies (SMPS) and DC-DC converters, FS50VS-3-VB can effectively handle high current and high voltage, provide excellent power conversion efficiency and stability, and is suitable for industrial power supplies and computer power management systems.
2. **Electric vehicles**: In the power system of electric vehicles, this MOSFET is used in high-power inverters and motor drives, and can withstand high voltage and high current operations, ensuring efficient operation of electric vehicles under various working conditions.
3. **Inverter**: In solar photovoltaic inverters, FS50VS-3-VB can be used for high-voltage DC to AC conversion, providing efficient energy conversion and reliable performance, supporting efficient power generation of solar systems.
4. **Power amplifier**: In high-power radio and communication equipment, this device can be used in power amplifiers to provide stable power output and low loss, ensuring the quality and stability of signal transmission.
FS50VS-3-VB MOSFET is an ideal choice for many high-power electronic applications due to its superior performance and wide applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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