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FS50UMJ-2-VB Product details

Product introduction:

FS50UMJ-2-VB MOSFET Product Introduction

FS50UMJ-2-VB is a high-performance unipolar N-channel MOSFET packaged in a TO220 package, suitable for applications requiring high current handling and efficient switching. It has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, capable of handling medium to high voltage application environments. FS50UMJ-2-VB has a low on-resistance (RDS(ON)) of 38mΩ at VGS of 4.5V and 36mΩ at VGS of 10V, which makes this MOSFET perform well in high current applications. It supports a continuous drain current (ID) of 55A, suitable for applications requiring higher currents. The MOSFET uses Trench technology, providing efficient switching performance and optimized thermal management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 55A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
FS50UMJ-2-VB Detailed parameter description

- **Package type**: TO220
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 38mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 55A
- **Technology**: Trench
- **Gate charge (Qg)**: Low, supports fast switching
- **Junction temperature (Tj)**: Suitable for high temperature environment

Domain and module applications:

Application fields and modules

FS50UMJ-2-VB MOSFET is suitable for a wide range of applications in multiple fields and modules:

1. **Power management**: In power management systems such as switching power supplies and DC-DC converters, the low on-resistance and high current handling capability of FS50UMJ-2-VB make it ideal for efficient power conversion, helping to improve the energy efficiency of the overall system.

2. **Motor drive**: In motor drives, FS50UMJ-2-VB is able to provide stable current control, suitable for industrial motor and automotive motor control circuits, supporting efficient and reliable motor operation.

3. **Automotive electronics**: This MOSFET can also be used in automotive electronic devices such as on-board chargers and power distribution modules, and its high temperature resistance and high current handling capability make it suitable for applications in automotive environments.

4. **Power Amplifier**: In power amplifier circuits, FS50UMJ-2-VB is able to effectively handle high current and high voltage, suitable for applications requiring high power output, such as audio power amplifiers and RF power amplifiers.

5. **Battery Management System**: In battery management systems, FS50UMJ-2-VB's low on-resistance and stable performance help to accurately control the battery's charge and discharge process, improving the efficiency and safety of the system.

With its high current capacity, low on-resistance and Trench technology, FS50UMJ-2-VB is a very reliable and versatile MOSFET suitable for a variety of applications requiring efficient current control and high voltage handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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