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FS50SMJ-3-VB Product details
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1. Product introduction of FS50SMJ-3-VB model
FS50SMJ-3-VB is a high-efficiency single N-channel power MOSFET manufactured using advanced Trench technology. The device is packaged in TO3P and can operate at a drain-source voltage (VDS) of 150V, making it suitable for high-voltage, high-current applications. The design features of FS50SMJ-3-VB include an on-resistance (RDS(ON)) of only 17mΩ at a gate voltage of 10V and a maximum continuous drain current (ID) of 90A, providing low conduction losses and high efficiency. This makes it particularly suitable for applications that require efficient power management and fast switching.
FS50SMJ-3-VB is a high-efficiency single N-channel power MOSFET manufactured using advanced Trench technology. The device is packaged in TO3P and can operate at a drain-source voltage (VDS) of 150V, making it suitable for high-voltage, high-current applications. The design features of FS50SMJ-3-VB include an on-resistance (RDS(ON)) of only 17mΩ at a gate voltage of 10V and a maximum continuous drain current (ID) of 90A, providing low conduction losses and high efficiency. This makes it particularly suitable for applications that require efficient power management and fast switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | 17mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
II. Detailed parameter description of FS50SMJ-3-VB model
1. **Package type**: TO3P
- The package type is designed for high current and high heat dissipation applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for high-efficiency switching applications.
3. **Drain-source voltage (VDS)**: 150V
- Suitable for medium and high voltage power supply systems.
4. **Gate voltage (VGS)**: ±20V
- The range of gate voltage provides greater operational flexibility.
5. **Threshold voltage (Vth)**: 3V
- The threshold voltage is 3V, ensuring that the MOSFET can be effectively turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**: 17mΩ@VGS=10V
- Low on-resistance, reduced conduction loss, improved efficiency.
7. **Maximum continuous drain current (ID)**: 90A
- Supports high current load, suitable for high power applications.
8. **Technology**: Trench
- Trench technology improves MOSFET switching speed and energy efficiency.
1. **Package type**: TO3P
- The package type is designed for high current and high heat dissipation applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for high-efficiency switching applications.
3. **Drain-source voltage (VDS)**: 150V
- Suitable for medium and high voltage power supply systems.
4. **Gate voltage (VGS)**: ±20V
- The range of gate voltage provides greater operational flexibility.
5. **Threshold voltage (Vth)**: 3V
- The threshold voltage is 3V, ensuring that the MOSFET can be effectively turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**: 17mΩ@VGS=10V
- Low on-resistance, reduced conduction loss, improved efficiency.
7. **Maximum continuous drain current (ID)**: 90A
- Supports high current load, suitable for high power applications.
8. **Technology**: Trench
- Trench technology improves MOSFET switching speed and energy efficiency.
Domain and module applications：
III. Application fields and modules of FS50SMJ-3-VB
FS50SMJ-3-VB is very suitable for application in the following fields and modules due to its high voltage, high current and low on-resistance characteristics:
1. **Electric Vehicle (EV) Power Module**:
- This MOSFET is suitable for high-efficiency power conversion modules in the main inverter and battery management system of electric vehicles, providing fast switching speed and low power consumption.
2. **Industrial Power Supply**:
- In industrial applications that require stable and efficient power supply, FS50SMJ-3-VB can be used in power modules such as DC-DC converters and AC-DC rectifiers.
3. **Renewable Energy Inverter**:
- Suitable for solar and wind inverter systems, providing efficient energy conversion and stable output.
4. **High Power Motor Driver**:
- In high power motor drivers, the device can be used to control the high current requirements of the motor when starting and running.
From these application examples, it can be seen that the FS50SMJ-3-VB performs well in high voltage power management systems that require high efficiency, low power consumption and fast switching, and is a versatile power MOSFET device.
FS50SMJ-3-VB is very suitable for application in the following fields and modules due to its high voltage, high current and low on-resistance characteristics:
1. **Electric Vehicle (EV) Power Module**:
- This MOSFET is suitable for high-efficiency power conversion modules in the main inverter and battery management system of electric vehicles, providing fast switching speed and low power consumption.
2. **Industrial Power Supply**:
- In industrial applications that require stable and efficient power supply, FS50SMJ-3-VB can be used in power modules such as DC-DC converters and AC-DC rectifiers.
3. **Renewable Energy Inverter**:
- Suitable for solar and wind inverter systems, providing efficient energy conversion and stable output.
4. **High Power Motor Driver**:
- In high power motor drivers, the device can be used to control the high current requirements of the motor when starting and running.
From these application examples, it can be seen that the FS50SMJ-3-VB performs well in high voltage power management systems that require high efficiency, low power consumption and fast switching, and is a versatile power MOSFET device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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