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FS50SM-3-VB Product details
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FS50SM-3-VB MOSFET Product Introduction
The FS50SM-3-VB is a high-performance unipolar N-channel MOSFET designed for power applications requiring efficient switching and low conduction losses. It is encapsulated in a TO3P package, providing excellent heat dissipation and high current handling capabilities. With a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for medium and high voltage power systems. The FS50SM-3-VB has a low RDS(ON) value of 17mΩ (at VGS of 10V), allowing it to operate efficiently with minimal power dissipation. It supports a continuous drain current (ID) of 90A, making it ideal for high current applications. This MOSFET uses Trench technology to increase switching speed and efficiency, improving overall system performance.
The FS50SM-3-VB is a high-performance unipolar N-channel MOSFET designed for power applications requiring efficient switching and low conduction losses. It is encapsulated in a TO3P package, providing excellent heat dissipation and high current handling capabilities. With a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for medium and high voltage power systems. The FS50SM-3-VB has a low RDS(ON) value of 17mΩ (at VGS of 10V), allowing it to operate efficiently with minimal power dissipation. It supports a continuous drain current (ID) of 90A, making it ideal for high current applications. This MOSFET uses Trench technology to increase switching speed and efficiency, improving overall system performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | 17mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
FS50SM-3-VB Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 17mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 90A
- **Technology**: Trench
- **Gate charge (Qg)**: Typically low, supports fast switching
- **Junction temperature (Tj)**: High temperature tolerance for demanding environments
- **Switching speed**: Optimized for fast switching
- **Package type**: TO3P
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 17mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 90A
- **Technology**: Trench
- **Gate charge (Qg)**: Typically low, supports fast switching
- **Junction temperature (Tj)**: High temperature tolerance for demanding environments
- **Switching speed**: Optimized for fast switching
Domain and module applications：
Applications and Modules
FS50SM-3-VB MOSFET has a wide range of applications, including:
1. **Power Supply Unit (PSU)**: FS50SM-3-VB is suitable for high-efficiency power supplies, where low conduction losses and high current handling capabilities are essential. Its low RDS(ON) ensures minimal power dissipation, making it ideal for industrial and consumer-grade power supplies.
2. **Motor Control Circuits**: In motor drives and controllers, the FS50SM-3-VB is able to handle high currents, and its efficient switching characteristics make it suitable for controlling motor power delivery, improving overall system efficiency.
3. **DC-DC Converters**: FS50SM-3-VB can be used in DC-DC converters, especially in applications that require high input voltages and high output currents. Its Trench technology supports high-efficiency switching, which is essential to maintaining high efficiency in the conversion process.
4. **Renewable Energy Systems**: This MOSFET is also suitable for renewable energy modules such as solar inverters and wind power converters, where high efficiency and reliability are critical to managing power conversion and distribution.
5. **Automotive Applications**: The FS50SM-3-VB can be used in a variety of automotive electronic devices, including power management systems, which require reliable performance under high current and high voltage conditions.
This MOSFET combines high current capability, low on-resistance and high-efficiency Trench technology, allowing it to excel in a variety of demanding applications.
FS50SM-3-VB MOSFET has a wide range of applications, including:
1. **Power Supply Unit (PSU)**: FS50SM-3-VB is suitable for high-efficiency power supplies, where low conduction losses and high current handling capabilities are essential. Its low RDS(ON) ensures minimal power dissipation, making it ideal for industrial and consumer-grade power supplies.
2. **Motor Control Circuits**: In motor drives and controllers, the FS50SM-3-VB is able to handle high currents, and its efficient switching characteristics make it suitable for controlling motor power delivery, improving overall system efficiency.
3. **DC-DC Converters**: FS50SM-3-VB can be used in DC-DC converters, especially in applications that require high input voltages and high output currents. Its Trench technology supports high-efficiency switching, which is essential to maintaining high efficiency in the conversion process.
4. **Renewable Energy Systems**: This MOSFET is also suitable for renewable energy modules such as solar inverters and wind power converters, where high efficiency and reliability are critical to managing power conversion and distribution.
5. **Automotive Applications**: The FS50SM-3-VB can be used in a variety of automotive electronic devices, including power management systems, which require reliable performance under high current and high voltage conditions.
This MOSFET combines high current capability, low on-resistance and high-efficiency Trench technology, allowing it to excel in a variety of demanding applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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