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FS50J-03-VB Product details
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Product Introduction
**FS50J-03-VB** is a high-performance N-channel MOSFET in TO252 package. It uses Trench technology and has excellent conduction performance and low on-resistance. This makes FS50J-03-VB perform well in high current and medium voltage applications. Its low on-resistance and high drain current capability enable it to provide stable performance in a variety of high-efficiency power management, switch control and drive applications.
**FS50J-03-VB** is a high-performance N-channel MOSFET in TO252 package. It uses Trench technology and has excellent conduction performance and low on-resistance. This makes FS50J-03-VB perform well in high current and medium voltage applications. Its low on-resistance and high drain current capability enable it to provide stable performance in a variety of high-efficiency power management, switch control and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: FS50J-03-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 6mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 80A
- **Technology**: Trench
- **Model**: FS50J-03-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 6mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and modules
**1. Power management systems**: The low on-resistance and high drain current capability of the FS50J-03-VB make it ideal for use in power management systems. Especially in high-efficiency DC-DC converters, this MOSFET is able to provide low power consumption and high efficiency performance, suitable for demanding power management applications.
**2. Motor drive and control**: Due to its high current handling capability and low on-resistance, the FS50J-03-VB is an ideal choice for motor drive systems. It can effectively handle high current loads during motor startup and operation, ensuring smooth motor drive and high efficiency.
**3. Switching control applications**: In applications that require high switching frequency and low switching losses, such as switching power supplies and high-frequency switching circuits, the low on-resistance and high current capability of the FS50J-03-VB make it an excellent choice. This makes it suitable for various switching control modules and high-efficiency switching power supply designs.
**4. Consumer Electronics Devices**: In consumer electronics products, such as power adapters and audio systems, the high current handling capability and low on-resistance of the FS50J-03-VB enable efficient power switching and control performance. This helps improve the overall performance and energy efficiency of the device.
In summary, the FS50J-03-VB is a MOSFET suitable for a variety of high-current, high-efficiency applications. Its excellent electrical performance and reliability enable it to excel in multiple fields and modules such as power management, motor drive, and switch control.
**1. Power management systems**: The low on-resistance and high drain current capability of the FS50J-03-VB make it ideal for use in power management systems. Especially in high-efficiency DC-DC converters, this MOSFET is able to provide low power consumption and high efficiency performance, suitable for demanding power management applications.
**2. Motor drive and control**: Due to its high current handling capability and low on-resistance, the FS50J-03-VB is an ideal choice for motor drive systems. It can effectively handle high current loads during motor startup and operation, ensuring smooth motor drive and high efficiency.
**3. Switching control applications**: In applications that require high switching frequency and low switching losses, such as switching power supplies and high-frequency switching circuits, the low on-resistance and high current capability of the FS50J-03-VB make it an excellent choice. This makes it suitable for various switching control modules and high-efficiency switching power supply designs.
**4. Consumer Electronics Devices**: In consumer electronics products, such as power adapters and audio systems, the high current handling capability and low on-resistance of the FS50J-03-VB enable efficient power switching and control performance. This helps improve the overall performance and energy efficiency of the device.
In summary, the FS50J-03-VB is a MOSFET suitable for a variety of high-current, high-efficiency applications. Its excellent electrical performance and reliability enable it to excel in multiple fields and modules such as power management, motor drive, and switch control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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