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FS50ASJ-03F-VB Product details
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FS50ASJ-03F-VB Product Introduction
The FS50ASJ-03F-VB is a high-performance N-channel MOSFET in a TO252 package, manufactured using advanced Trench technology. This MOSFET has the advantages of high current and low on-resistance, making it ideal for applications that require high switching efficiency and low power consumption. The maximum drain-source voltage (VDS) of the FS50ASJ-03F-VB is 30V, and the maximum gate-source voltage (VGS) is ±20V. Its threshold voltage (Vth) is 1.7V, ensuring fast switching performance. The MOSFET has an on-resistance (RDS(ON)) of 6mΩ at VGS = 4.5V and 5mΩ at VGS = 10V, and can support a maximum drain current (ID) of up to 80A. This makes the FS50ASJ-03F-VB particularly good in low-voltage, high-current applications.
The FS50ASJ-03F-VB is a high-performance N-channel MOSFET in a TO252 package, manufactured using advanced Trench technology. This MOSFET has the advantages of high current and low on-resistance, making it ideal for applications that require high switching efficiency and low power consumption. The maximum drain-source voltage (VDS) of the FS50ASJ-03F-VB is 30V, and the maximum gate-source voltage (VGS) is ±20V. Its threshold voltage (Vth) is 1.7V, ensuring fast switching performance. The MOSFET has an on-resistance (RDS(ON)) of 6mΩ at VGS = 4.5V and 5mΩ at VGS = 10V, and can support a maximum drain current (ID) of up to 80A. This makes the FS50ASJ-03F-VB particularly good in low-voltage, high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: FS50ASJ-03F-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ (at VGS = 4.5V)
- 5mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Model**: FS50ASJ-03F-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ (at VGS = 4.5V)
- 5mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
FS50ASJ-03F-VB is suitable for a variety of fields and modules due to its excellent conduction characteristics and high current handling capability, including:
1. **High-efficiency power management**:
- **Application**: The low on-resistance of FS50ASJ-03F-VB makes it very suitable for use in high-efficiency power management systems. It can effectively reduce power loss in power switches and improve system efficiency.
- **Example**: DC-DC converters, power switch modules, and power distribution circuits.
2. **Motor control**:
- **Application**: This MOSFET is capable of handling high currents in motor drive systems and is particularly suitable for motor control applications that require high switching speeds and low energy losses.
- **Example**: DC motor drive systems, stepper motor control, and brushless motor control modules.
3. **Automotive Electronics**:
- **Application**: The high current capability and low on-resistance of the FS50ASJ-03F-VB make it suitable for use in automotive electronic systems, especially where reliable and efficient current management is required.
- **Examples**: Automotive battery management systems, electric power steering systems, and automotive electronic control modules.
4. **Battery Protection Circuits**:
- **Application**: Due to its low on-resistance and high current carrying capacity, the FS50ASJ-03F-VB can be used in battery protection circuits to ensure that the battery is effectively protected during the charge and discharge process.
- **Examples**: Lithium battery protection circuits and switch modules in battery management systems.
The low RDS(ON) and high current handling capability of the FS50ASJ-03F-VB make it an excellent performer in multiple high-performance electronic applications, especially where high efficiency and reliability are required.
FS50ASJ-03F-VB is suitable for a variety of fields and modules due to its excellent conduction characteristics and high current handling capability, including:
1. **High-efficiency power management**:
- **Application**: The low on-resistance of FS50ASJ-03F-VB makes it very suitable for use in high-efficiency power management systems. It can effectively reduce power loss in power switches and improve system efficiency.
- **Example**: DC-DC converters, power switch modules, and power distribution circuits.
2. **Motor control**:
- **Application**: This MOSFET is capable of handling high currents in motor drive systems and is particularly suitable for motor control applications that require high switching speeds and low energy losses.
- **Example**: DC motor drive systems, stepper motor control, and brushless motor control modules.
3. **Automotive Electronics**:
- **Application**: The high current capability and low on-resistance of the FS50ASJ-03F-VB make it suitable for use in automotive electronic systems, especially where reliable and efficient current management is required.
- **Examples**: Automotive battery management systems, electric power steering systems, and automotive electronic control modules.
4. **Battery Protection Circuits**:
- **Application**: Due to its low on-resistance and high current carrying capacity, the FS50ASJ-03F-VB can be used in battery protection circuits to ensure that the battery is effectively protected during the charge and discharge process.
- **Examples**: Lithium battery protection circuits and switch modules in battery management systems.
The low RDS(ON) and high current handling capability of the FS50ASJ-03F-VB make it an excellent performer in multiple high-performance electronic applications, especially where high efficiency and reliability are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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