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FS50ASJ03F-VB Product details
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Product Introduction
**FS50ASJ03F-VB** is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications. It has a drain-source withstand voltage (VDS) of 30V, suitable for switching and current control of low voltage circuits. The gate-source voltage (VGS) of this MOSFET is ±20V, ensuring stability in high voltage environments. The threshold voltage (Vth) is 1.7V, ensuring that it can still be effectively turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 6mΩ@VGS=4.5V and 5mΩ@VGS=10V, providing extremely low power consumption and efficient current transmission capabilities. The maximum drain current (ID) is 80A, making it suitable for use in high current applications. The use of Trench technology improves the switching efficiency and performance of the MOSFET.
**FS50ASJ03F-VB** is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications. It has a drain-source withstand voltage (VDS) of 30V, suitable for switching and current control of low voltage circuits. The gate-source voltage (VGS) of this MOSFET is ±20V, ensuring stability in high voltage environments. The threshold voltage (Vth) is 1.7V, ensuring that it can still be effectively turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 6mΩ@VGS=4.5V and 5mΩ@VGS=10V, providing extremely low power consumption and efficient current transmission capabilities. The maximum drain current (ID) is 80A, making it suitable for use in high current applications. The use of Trench technology improves the switching efficiency and performance of the MOSFET.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: FS50ASJ03F-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source withstand voltage (VDS)**: 30V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ (@VGS=4.5V)
- 5mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Model**: FS50ASJ03F-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source withstand voltage (VDS)**: 30V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ (@VGS=4.5V)
- 5mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **DC-DC Converter**: The low on-resistance and high current carrying capability of the FS50ASJ03F-VB make it an ideal choice in DC-DC converters. Its low RDS(ON) characteristics help improve conversion efficiency, reduce energy losses, and provide stable current conversion in high-power applications.
2. **Motor Drive**: In motor drive systems, this MOSFET can be used for efficient switching control. Its high drain current (80A) can handle the high current demands of the motor during startup and operation, providing stable current control and enhancing system performance.
3. **Power Management**: The FS50ASJ03F-VB excels in power management systems, especially in applications that require low voltage and high current, such as power distribution modules and high-efficiency power switches. Its low on-resistance can significantly reduce power losses and improve the overall efficiency of the system.
4. **Power Amplifier**: In power amplifier applications, such as audio amplifiers or RF amplifiers, FS50ASJ03F-VB can be used for efficient switch control and signal amplification. Its low RDS(ON) provides efficient power transmission and improves amplifier performance.
5. **Battery Management System**: In battery management and charging systems, FS50ASJ03F-VB can be used for efficient charging and discharging control. Its high current carrying capacity and low on-resistance help optimize the charging process, extend battery life, and ensure stable system operation.
Through these application examples, it can be seen that FS50ASJ03F-VB has a wide range of applicability in low voltage, high current applications, especially in applications that require high efficiency and low power consumption.
1. **DC-DC Converter**: The low on-resistance and high current carrying capability of the FS50ASJ03F-VB make it an ideal choice in DC-DC converters. Its low RDS(ON) characteristics help improve conversion efficiency, reduce energy losses, and provide stable current conversion in high-power applications.
2. **Motor Drive**: In motor drive systems, this MOSFET can be used for efficient switching control. Its high drain current (80A) can handle the high current demands of the motor during startup and operation, providing stable current control and enhancing system performance.
3. **Power Management**: The FS50ASJ03F-VB excels in power management systems, especially in applications that require low voltage and high current, such as power distribution modules and high-efficiency power switches. Its low on-resistance can significantly reduce power losses and improve the overall efficiency of the system.
4. **Power Amplifier**: In power amplifier applications, such as audio amplifiers or RF amplifiers, FS50ASJ03F-VB can be used for efficient switch control and signal amplification. Its low RDS(ON) provides efficient power transmission and improves amplifier performance.
5. **Battery Management System**: In battery management and charging systems, FS50ASJ03F-VB can be used for efficient charging and discharging control. Its high current carrying capacity and low on-resistance help optimize the charging process, extend battery life, and ensure stable system operation.
Through these application examples, it can be seen that FS50ASJ03F-VB has a wide range of applicability in low voltage, high current applications, especially in applications that require high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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