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FS31N20D-VB Product details
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FS31N20D-VB MOSFET Product Introduction
FS31N20D-VB is a high-performance N-type MOSFET in TO263 package. This MOSFET is designed for high voltage and medium current applications and has a drain-source voltage (VDS) rating of 200V. Its gate-source voltage (VGS) maximum value is ±20V, which is suitable for stable operation in a higher voltage range. FS31N20D-VB uses Trench technology and has an on-resistance (RDS(ON)) of 48mΩ. It performs well at VGS=10V and can effectively reduce switching losses. Its maximum continuous drain current (ID) is 40A, which can meet the needs of high current applications.
FS31N20D-VB is a high-performance N-type MOSFET in TO263 package. This MOSFET is designed for high voltage and medium current applications and has a drain-source voltage (VDS) rating of 200V. Its gate-source voltage (VGS) maximum value is ±20V, which is suitable for stable operation in a higher voltage range. FS31N20D-VB uses Trench technology and has an on-resistance (RDS(ON)) of 48mΩ. It performs well at VGS=10V and can effectively reduce switching losses. Its maximum continuous drain current (ID) is 40A, which can meet the needs of high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
FS31N20D-VB MOSFET detailed parameter description
- **Package**: TO263
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 40A
- **Process technology**: Trench
- **Package**: TO263
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 40A
- **Process technology**: Trench
Domain and module applications：
FS31N20D-VB MOSFET Application Fields and Module Examples
1. **High-voltage switching power supply**: FS31N20D-VB is suitable for the switch part of high-voltage switching power supply, especially in applications that require 200V voltage handling capability. Its low on-resistance can effectively reduce switching losses and improve system efficiency.
2. **Motor drive control**: In motor drive applications, FS31N20D-VB can be used for high-current motor control circuits. It can handle currents up to 40A and is suitable for motor drive systems that require strong drive capabilities.
3. **Inverter applications**: This MOSFET can be used in inverter circuits, especially in solar inverters and other high-voltage inverter systems. Its high voltage and high current handling capabilities enable it to work stably under high load conditions.
4. **Power Management Module**: FS31N20D-VB is also suitable for use in various power management modules, such as power regulators and load switches. Its excellent conduction performance and voltage resistance characteristics ensure the stability and efficiency of the power management system.
The high voltage tolerance and low on-resistance of FS31N20D-VB make it excel in applications that require high current and high voltage handling capabilities, especially in power management, motor drive and power conversion.
1. **High-voltage switching power supply**: FS31N20D-VB is suitable for the switch part of high-voltage switching power supply, especially in applications that require 200V voltage handling capability. Its low on-resistance can effectively reduce switching losses and improve system efficiency.
2. **Motor drive control**: In motor drive applications, FS31N20D-VB can be used for high-current motor control circuits. It can handle currents up to 40A and is suitable for motor drive systems that require strong drive capabilities.
3. **Inverter applications**: This MOSFET can be used in inverter circuits, especially in solar inverters and other high-voltage inverter systems. Its high voltage and high current handling capabilities enable it to work stably under high load conditions.
4. **Power Management Module**: FS31N20D-VB is also suitable for use in various power management modules, such as power regulators and load switches. Its excellent conduction performance and voltage resistance characteristics ensure the stability and efficiency of the power management system.
The high voltage tolerance and low on-resistance of FS31N20D-VB make it excel in applications that require high current and high voltage handling capabilities, especially in power management, motor drive and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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