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FS31N20DP-VB Product details
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FS31N20DP-VB MOSFET Product Introduction
FS31N20DP-VB is a high-performance N-channel power MOSFET in TO263 package. It has a drain-source withstand voltage (VDS) of 200V and a continuous drain current (ID) of 40A. This MOSFET utilizes Trench technology, which can significantly reduce the on-resistance (RDS(ON)) and increase the switching speed. The on-resistance of FS31N20DP-VB is 48mΩ@VGS=10V, the gate threshold voltage (Vth) is 3V, and the gate-source voltage tolerance (VGS) is ±20V. These characteristics make FS31N20DP-VB perform well in applications requiring medium, high voltage and high current, and can meet the needs of high efficiency and high reliability.
FS31N20DP-VB is a high-performance N-channel power MOSFET in TO263 package. It has a drain-source withstand voltage (VDS) of 200V and a continuous drain current (ID) of 40A. This MOSFET utilizes Trench technology, which can significantly reduce the on-resistance (RDS(ON)) and increase the switching speed. The on-resistance of FS31N20DP-VB is 48mΩ@VGS=10V, the gate threshold voltage (Vth) is 3V, and the gate-source voltage tolerance (VGS) is ±20V. These characteristics make FS31N20DP-VB perform well in applications requiring medium, high voltage and high current, and can meet the needs of high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
FS31N20DP-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Technology**: Trench technology
- **Power consumption**: Suitable for use in medium, high voltage and high current environments
- **Switching speed**: Fast switching characteristics, suitable for high frequency applications
- **Drain current switching capability**: Optimized switching loss and thermal performance
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Technology**: Trench technology
- **Power consumption**: Suitable for use in medium, high voltage and high current environments
- **Switching speed**: Fast switching characteristics, suitable for high frequency applications
- **Drain current switching capability**: Optimized switching loss and thermal performance
Domain and module applications：
FS31N20DP-VB MOSFET Application Fields and Module Examples
1. **DC/DC Converter**: FS31N20DP-VB performs well in DC/DC converters, especially high voltage converters. Its high withstand voltage and low on-resistance enable it to work stably at high voltage, improve conversion efficiency and reduce power consumption.
2. **Power Management System**: In power management systems, such as power switches and battery management systems, FS31N20DP-VB provides an efficient switch control solution. Its high current handling capability and good on-resistance make it suitable for a variety of high-efficiency power management applications.
3. **Industrial Motor Drive**: FS31N20DP-VB can be used in industrial motor drive systems, capable of handling high currents and working stably at high voltages of 200V. Its excellent switching characteristics and low on-resistance can improve the efficiency and reliability of motor systems.
4. **Automotive Electronic Systems**: In automotive electronic systems, such as on-board battery management systems and high-voltage power modules, the high withstand voltage and low on-resistance characteristics of the FS31N20DP-VB can provide stable current control and support the efficient operation of automotive electronic equipment.
The excellent performance of the FS31N20DP-VB MOSFET enables it to perform well in medium-high voltage and high current applications, and is suitable for a variety of high-efficiency and high-reliability power management and control systems.
1. **DC/DC Converter**: FS31N20DP-VB performs well in DC/DC converters, especially high voltage converters. Its high withstand voltage and low on-resistance enable it to work stably at high voltage, improve conversion efficiency and reduce power consumption.
2. **Power Management System**: In power management systems, such as power switches and battery management systems, FS31N20DP-VB provides an efficient switch control solution. Its high current handling capability and good on-resistance make it suitable for a variety of high-efficiency power management applications.
3. **Industrial Motor Drive**: FS31N20DP-VB can be used in industrial motor drive systems, capable of handling high currents and working stably at high voltages of 200V. Its excellent switching characteristics and low on-resistance can improve the efficiency and reliability of motor systems.
4. **Automotive Electronic Systems**: In automotive electronic systems, such as on-board battery management systems and high-voltage power modules, the high withstand voltage and low on-resistance characteristics of the FS31N20DP-VB can provide stable current control and support the efficient operation of automotive electronic equipment.
The excellent performance of the FS31N20DP-VB MOSFET enables it to perform well in medium-high voltage and high current applications, and is suitable for a variety of high-efficiency and high-reliability power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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