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FS30SM-6-VB Product details
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Product Introduction
FS30SM-6-VB is a high voltage N-channel MOSFET in TO-3P package, designed for high voltage applications. With a drain-source voltage (VDS) of 600V, this MOSFET is suitable for handling current in high voltage environments. It uses SJ_Multi-EPI technology and has good switching performance and stability. With an on-resistance of 60mΩ @ VGS=10V, it is able to operate at relatively high currents (47A), making it suitable for high power power management and switching applications that require high voltage resistance and stability.
FS30SM-6-VB is a high voltage N-channel MOSFET in TO-3P package, designed for high voltage applications. With a drain-source voltage (VDS) of 600V, this MOSFET is suitable for handling current in high voltage environments. It uses SJ_Multi-EPI technology and has good switching performance and stability. With an on-resistance of 60mΩ @ VGS=10V, it is able to operate at relatively high currents (47A), making it suitable for high power power management and switching applications that require high voltage resistance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Parameter description
1. **Package type**: TO-3P
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 47A
8. **Technology type**: SJ_Multi-EPI
1. **Package type**: TO-3P
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 47A
8. **Technology type**: SJ_Multi-EPI
Domain and module applications：
Application Areas and Modules
FS30SM-6-VB MOSFET is designed to be particularly suitable for use in high voltage and high power conditions. Here are some specific application areas:
- **High Voltage Power Management**: This MOSFET is suitable for high voltage power systems such as high voltage DC-DC converters and AC-DC converters, it is able to handle current under high voltage conditions and provide stable switching performance.
- **Power Inverter**: In power inverter applications, FS30SM-6-VB can effectively control high voltage current, improve the conversion efficiency and reliability of the system, especially in solar inverters and electric vehicle inverters.
- **Industrial Power**: In industrial power modules, this device is able to manage current in high voltage environments, suitable for industrial automation equipment and high power power modules.
- **High Voltage Motor Drive**: Due to its high voltage and high current characteristics, this MOSFET is suitable for high voltage motor drive applications, which can provide stable switching control and high efficiency.
In short, FS30SM-6-VB MOSFET is widely used in power management and power conversion systems that require reliability and high efficiency due to its excellent high voltage and high power handling capabilities.
FS30SM-6-VB MOSFET is designed to be particularly suitable for use in high voltage and high power conditions. Here are some specific application areas:
- **High Voltage Power Management**: This MOSFET is suitable for high voltage power systems such as high voltage DC-DC converters and AC-DC converters, it is able to handle current under high voltage conditions and provide stable switching performance.
- **Power Inverter**: In power inverter applications, FS30SM-6-VB can effectively control high voltage current, improve the conversion efficiency and reliability of the system, especially in solar inverters and electric vehicle inverters.
- **Industrial Power**: In industrial power modules, this device is able to manage current in high voltage environments, suitable for industrial automation equipment and high power power modules.
- **High Voltage Motor Drive**: Due to its high voltage and high current characteristics, this MOSFET is suitable for high voltage motor drive applications, which can provide stable switching control and high efficiency.
In short, FS30SM-6-VB MOSFET is widely used in power management and power conversion systems that require reliability and high efficiency due to its excellent high voltage and high power handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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