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FS30SM-5-VB Product details
Back to previous pageProduct introduction：
1. FS30SM-5-VB MOSFET Product Introduction
FS30SM-5-VB is a high-performance N-channel MOSFET in TO3P package, designed for medium and high voltage applications. This MOSFET has a maximum drain-source voltage (VDS) of 250V and a low on-resistance of 40mΩ at a gate drive voltage of 10V. Its maximum drain current reaches 60A. FS30SM-5-VB uses Trench technology to provide excellent switching performance and low conduction losses, making it excel in applications requiring high efficiency and reliability.
FS30SM-5-VB is a high-performance N-channel MOSFET in TO3P package, designed for medium and high voltage applications. This MOSFET has a maximum drain-source voltage (VDS) of 250V and a low on-resistance of 40mΩ at a gate drive voltage of 10V. Its maximum drain current reaches 60A. FS30SM-5-VB uses Trench technology to provide excellent switching performance and low conduction losses, making it excel in applications requiring high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. FS30SM-5-VB MOSFET Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 250V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Ptot)**: TBD (please refer to the specific data sheet)
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 250V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Ptot)**: TBD (please refer to the specific data sheet)
Domain and module applications：
III. Applications and module examples of FS30SM-5-VB MOSFET
FS30SM-5-VB MOSFET is suitable for the following applications due to its high current carrying capacity and medium voltage handling capability:
1. **Power converter**: In high power DC-DC converters and AC-DC converters, FS30SM-5-VB is able to handle high current and maintain low on-resistance, thereby improving the efficiency and stability of the power supply. This is critical for power supply designs that require high current handling capability and low losses.
2. **Motor drive**: In industrial motor drive systems, FS30SM-5-VB can be used as a high current switch to ensure smooth operation of the motor. Its high current capability and low on-resistance enable it to effectively drive high power motors and improve overall system performance.
3. **Power amplifier**: In audio power amplifiers or RF power amplifiers, FS30SM-5-VB can be used as a high current switching element to handle high power signals and reduce power loss, thereby improving the efficiency and output quality of the power amplifier.
4. **Power management**: In power management modules that require high current and high reliability, FS30SM-5-VB can be used as a high current switch or regulation element to help improve the overall efficiency and reliability of the power management system.
5. **High frequency switching circuit**: Due to its good switching performance and low on-resistance, FS30SM-5-VB is suitable for high frequency switching circuits, such as high frequency DC-DC converters, to provide efficient power conversion in high frequency applications.
The high current handling capability and excellent switching characteristics of FS30SM-5-VB MOSFET enable it to play an important role in a variety of high power and high efficiency power electronics applications.
FS30SM-5-VB MOSFET is suitable for the following applications due to its high current carrying capacity and medium voltage handling capability:
1. **Power converter**: In high power DC-DC converters and AC-DC converters, FS30SM-5-VB is able to handle high current and maintain low on-resistance, thereby improving the efficiency and stability of the power supply. This is critical for power supply designs that require high current handling capability and low losses.
2. **Motor drive**: In industrial motor drive systems, FS30SM-5-VB can be used as a high current switch to ensure smooth operation of the motor. Its high current capability and low on-resistance enable it to effectively drive high power motors and improve overall system performance.
3. **Power amplifier**: In audio power amplifiers or RF power amplifiers, FS30SM-5-VB can be used as a high current switching element to handle high power signals and reduce power loss, thereby improving the efficiency and output quality of the power amplifier.
4. **Power management**: In power management modules that require high current and high reliability, FS30SM-5-VB can be used as a high current switch or regulation element to help improve the overall efficiency and reliability of the power management system.
5. **High frequency switching circuit**: Due to its good switching performance and low on-resistance, FS30SM-5-VB is suitable for high frequency switching circuits, such as high frequency DC-DC converters, to provide efficient power conversion in high frequency applications.
The high current handling capability and excellent switching characteristics of FS30SM-5-VB MOSFET enable it to play an important role in a variety of high power and high efficiency power electronics applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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