中文
English
FS30KMJ-2-VB Product details
Back to previous pageProduct introduction：
FS30KMJ-2-VB MOSFET Product Introduction
FS30KMJ-2-VB is a high-performance unipolar N-channel MOSFET packaged in TO220F, designed for applications requiring high current and high efficiency. This MOSFET has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) capability of ±20V. It uses advanced Trench technology, which helps achieve low on-resistance (RDS(ON)) and high current handling capability, enabling it to provide stable and reliable performance under high voltage and high load conditions. The threshold voltage (Vth) of FS30KMJ-2-VB is 1.8V, making it suitable for operation under a variety of control voltage conditions and widely used in high-power switches and power management systems.
FS30KMJ-2-VB is a high-performance unipolar N-channel MOSFET packaged in TO220F, designed for applications requiring high current and high efficiency. This MOSFET has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) capability of ±20V. It uses advanced Trench technology, which helps achieve low on-resistance (RDS(ON)) and high current handling capability, enabling it to provide stable and reliable performance under high voltage and high load conditions. The threshold voltage (Vth) of FS30KMJ-2-VB is 1.8V, making it suitable for operation under a variety of control voltage conditions and widely used in high-power switches and power management systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FS30KMJ-2-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench technology
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench technology
Domain and module applications：
FS30KMJ-2-VB MOSFET Applications and Module Examples
1. **Switching Power Supply**: The high voltage tolerance and low on-resistance of the FS30KMJ-2-VB make it an ideal choice for switching power supply applications. It can efficiently convert voltage while reducing conduction losses, optimize the conversion efficiency of the power supply, and improve the performance and reliability of the overall system.
2. **Motor Drive**: In motor drive systems, the high current handling capability and low RDS(ON) characteristics of the FS30KMJ-2-VB ensure efficient motor drive. Especially in situations where high starting current and stable control are required, this MOSFET can effectively handle the current flow and improve the overall efficiency and reliability of the motor.
3. **Battery Management System**: This MOSFET is also suitable for high current switching functions in battery management systems. Its low on-resistance reduces power loss during battery charging and discharging, helping to improve the battery life and the overall efficiency of the system.
Through its advanced trench technology and excellent electrical characteristics, FS30KMJ-2-VB is able to provide excellent performance in these high-power and high-efficiency applications, meeting a variety of demanding working requirements.
1. **Switching Power Supply**: The high voltage tolerance and low on-resistance of the FS30KMJ-2-VB make it an ideal choice for switching power supply applications. It can efficiently convert voltage while reducing conduction losses, optimize the conversion efficiency of the power supply, and improve the performance and reliability of the overall system.
2. **Motor Drive**: In motor drive systems, the high current handling capability and low RDS(ON) characteristics of the FS30KMJ-2-VB ensure efficient motor drive. Especially in situations where high starting current and stable control are required, this MOSFET can effectively handle the current flow and improve the overall efficiency and reliability of the motor.
3. **Battery Management System**: This MOSFET is also suitable for high current switching functions in battery management systems. Its low on-resistance reduces power loss during battery charging and discharging, helping to improve the battery life and the overall efficiency of the system.
Through its advanced trench technology and excellent electrical characteristics, FS30KMJ-2-VB is able to provide excellent performance in these high-power and high-efficiency applications, meeting a variety of demanding working requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
