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FS30KM-3-AZ-VB Product details
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Product Introduction
**FS30KM-3-AZ-VB** is a high-performance N-channel MOSFET in a TO220F package designed for medium-to-high voltage and high current applications. It has a maximum drain-source voltage (VDS) of 200V, suitable for circuits handling higher voltages. This MOSFET has a low on-resistance (RDS(ON)) of 58mΩ @ VGS = 10V, making it an excellent performer in high current applications. FS30KM-3-AZ-VB uses Trench technology, which optimizes the switching characteristics and on-resistance of the device, providing efficient power management and superior thermal performance.
**FS30KM-3-AZ-VB** is a high-performance N-channel MOSFET in a TO220F package designed for medium-to-high voltage and high current applications. It has a maximum drain-source voltage (VDS) of 200V, suitable for circuits handling higher voltages. This MOSFET has a low on-resistance (RDS(ON)) of 58mΩ @ VGS = 10V, making it an excellent performer in high current applications. FS30KM-3-AZ-VB uses Trench technology, which optimizes the switching characteristics and on-resistance of the device, providing efficient power management and superior thermal performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
**FS30KM-3-AZ-VB** MOSFET features make it widely used in the following fields and modules:
1. **Switching Power Supply**:
- In the switching power supply (SMPS), the low on-resistance (58mΩ) of FS30KM-3-AZ-VB makes it very suitable for use as a high-efficiency switching element. It can help improve power conversion efficiency and reduce energy loss, and is suitable for various power management and voltage conversion applications.
2. **Motor Drive**:
- In motor drive applications, such as DC motor control and stepper motor drive, the high current handling capability (20A) and low RDS(ON) characteristics of FS30KM-3-AZ-VB ensure efficient and stable operation of the motor drive. It is able to handle the high current load of the motor and provide reliable control.
3. **Power Conversion Module**:
- In power conversion modules, such as DC-DC converters, FS30KM-3-AZ-VB is suitable for efficient power conversion due to its low on-resistance and high current capability. It can reduce power loss during the conversion process and improve overall system efficiency.
4. **Electrical Protection and Control**:
- This MOSFET is also suitable for electrical protection and control systems, such as overcurrent protection and circuit switching. It can handle high current loads in medium and high voltage circuits, ensuring the safety and stability of electrical systems.
In general, the low on-resistance, high current capability, and high withstand voltage characteristics of the FS30KM-3-AZ-VB MOSFET make it excel in applications such as switching power supplies, motor drives, and power conversion modules, providing high efficiency and reliable performance.
**FS30KM-3-AZ-VB** MOSFET features make it widely used in the following fields and modules:
1. **Switching Power Supply**:
- In the switching power supply (SMPS), the low on-resistance (58mΩ) of FS30KM-3-AZ-VB makes it very suitable for use as a high-efficiency switching element. It can help improve power conversion efficiency and reduce energy loss, and is suitable for various power management and voltage conversion applications.
2. **Motor Drive**:
- In motor drive applications, such as DC motor control and stepper motor drive, the high current handling capability (20A) and low RDS(ON) characteristics of FS30KM-3-AZ-VB ensure efficient and stable operation of the motor drive. It is able to handle the high current load of the motor and provide reliable control.
3. **Power Conversion Module**:
- In power conversion modules, such as DC-DC converters, FS30KM-3-AZ-VB is suitable for efficient power conversion due to its low on-resistance and high current capability. It can reduce power loss during the conversion process and improve overall system efficiency.
4. **Electrical Protection and Control**:
- This MOSFET is also suitable for electrical protection and control systems, such as overcurrent protection and circuit switching. It can handle high current loads in medium and high voltage circuits, ensuring the safety and stability of electrical systems.
In general, the low on-resistance, high current capability, and high withstand voltage characteristics of the FS30KM-3-AZ-VB MOSFET make it excel in applications such as switching power supplies, motor drives, and power conversion modules, providing high efficiency and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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