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FS30ASJ-2-VB Product details
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FS30ASJ-2-VB MOSFET Product Introduction
FS30ASJ-2-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. Its drain-source voltage (VDS) is as high as 100V, suitable for applications that require medium voltage handling. The MOSFET is equipped with ±20V gate-source voltage (VGS) protection and uses Trench technology to ensure excellent switching performance and low on-resistance. The typical turn-on voltage of FS30ASJ-2-VB is 1.8V (Vth), and its on-resistance (RDS(ON)) is 35mΩ when VGS is 4.5V and 30mΩ when VGS is 10V. The maximum drain current is 40A, making it suitable for high current switching applications.
FS30ASJ-2-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. Its drain-source voltage (VDS) is as high as 100V, suitable for applications that require medium voltage handling. The MOSFET is equipped with ±20V gate-source voltage (VGS) protection and uses Trench technology to ensure excellent switching performance and low on-resistance. The typical turn-on voltage of FS30ASJ-2-VB is 1.8V (Vth), and its on-resistance (RDS(ON)) is 35mΩ when VGS is 4.5V and 30mΩ when VGS is 10V. The maximum drain current is 40A, making it suitable for high current switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FS30ASJ-2-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
FS30ASJ-2-VB MOSFET is suitable for the following fields and modules:
1. **Power management**: In power management applications, FS30ASJ-2-VB can be used as a switching device for DC-DC converters, providing high-efficiency power conversion and capable of handling high current and medium voltage.
2. **Motor drive**: In motor drive systems, this MOSFET can be used for high current control, suitable for motor starting, running and speed control, and can provide stable switching performance under high current conditions.
3. **Switching power supply**: FS30ASJ-2-VB is suitable for high current switching applications in switching power supply modules, such as power factor correction (PFC) circuits and DC-DC converters (DC-DC), and can maintain efficient switching performance at medium voltage.
4. **LED driver**: In the LED driver circuit, this MOSFET can be used as a switching device to control the brightness and switching of the LED, and is suitable for high-current LED lighting systems.
5. **Automotive electronics**: In automotive electronic systems, such as power window control, seat adjustment and other functions, FS30ASJ-2-VB can be used as a switching element to provide high current and reliable switching control.
Due to its low on-resistance and high current capability, FS30ASJ-2-VB is an ideal choice for a variety of medium voltage and high current applications, and can provide stable and efficient performance in a wide range of fields.
FS30ASJ-2-VB MOSFET is suitable for the following fields and modules:
1. **Power management**: In power management applications, FS30ASJ-2-VB can be used as a switching device for DC-DC converters, providing high-efficiency power conversion and capable of handling high current and medium voltage.
2. **Motor drive**: In motor drive systems, this MOSFET can be used for high current control, suitable for motor starting, running and speed control, and can provide stable switching performance under high current conditions.
3. **Switching power supply**: FS30ASJ-2-VB is suitable for high current switching applications in switching power supply modules, such as power factor correction (PFC) circuits and DC-DC converters (DC-DC), and can maintain efficient switching performance at medium voltage.
4. **LED driver**: In the LED driver circuit, this MOSFET can be used as a switching device to control the brightness and switching of the LED, and is suitable for high-current LED lighting systems.
5. **Automotive electronics**: In automotive electronic systems, such as power window control, seat adjustment and other functions, FS30ASJ-2-VB can be used as a switching element to provide high current and reliable switching control.
Due to its low on-resistance and high current capability, FS30ASJ-2-VB is an ideal choice for a variety of medium voltage and high current applications, and can provide stable and efficient performance in a wide range of fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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