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FS30ASJ-03-VB Product details
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FS30ASJ-03-VB MOSFET Product Introduction
FS30ASJ-03-VB is a high-performance single-channel N-type MOSFET in a TO252 package. It has a drain-source voltage (VDS) rating of 30V and is suitable for low to medium voltage applications. The device has a maximum gate-source voltage (VGS) of ±20V and a gate threshold voltage (Vth) of 1.7V, ensuring that it can be turned on at a lower gate drive voltage. FS30ASJ-03-VB uses advanced Trench technology and has very low on-resistance (RDS(ON)) of 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V). Its maximum continuous drain current (ID) is 70A, making it an excellent performer in high current applications.
FS30ASJ-03-VB is a high-performance single-channel N-type MOSFET in a TO252 package. It has a drain-source voltage (VDS) rating of 30V and is suitable for low to medium voltage applications. The device has a maximum gate-source voltage (VGS) of ±20V and a gate threshold voltage (Vth) of 1.7V, ensuring that it can be turned on at a lower gate drive voltage. FS30ASJ-03-VB uses advanced Trench technology and has very low on-resistance (RDS(ON)) of 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V). Its maximum continuous drain current (ID) is 70A, making it an excellent performer in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FS30ASJ-03-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 70A
- **Process technology**: Trench
- **Package**: TO252
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 70A
- **Process technology**: Trench
Domain and module applications：
FS30ASJ-03-VB MOSFET Application Fields and Module Examples
1. **Power Management**: FS30ASJ-03-VB is suitable for various power management applications, such as DC-DC converters and power switches. Its low on-resistance and high current handling capability enable efficient switch control and power regulation in power management.
2. **Motor Drive**: In motor drive systems, FS30ASJ-03-VB can be used in high current motor control circuits. Its low on-resistance and high current capability ensure efficient operation of the motor drive, reducing energy loss and heat generation.
3. **Power Amplifier**: This MOSFET can be applied to power amplifier circuits, such as audio amplifiers and RF amplifiers. Its high current capability and low on-resistance enable it to perform well in power amplification and signal amplification.
4. **Switching circuit**: FS30ASJ-03-VB is also suitable for various switching circuits, including high-efficiency switching power supplies and load switches. Its low RDS(ON) can effectively reduce switching losses and improve system efficiency.
The high current and low on-resistance characteristics of FS30ASJ-03-VB make it excel in multiple high-efficiency and high-current applications, especially in scenarios that require optimized performance and reduced power consumption.
1. **Power Management**: FS30ASJ-03-VB is suitable for various power management applications, such as DC-DC converters and power switches. Its low on-resistance and high current handling capability enable efficient switch control and power regulation in power management.
2. **Motor Drive**: In motor drive systems, FS30ASJ-03-VB can be used in high current motor control circuits. Its low on-resistance and high current capability ensure efficient operation of the motor drive, reducing energy loss and heat generation.
3. **Power Amplifier**: This MOSFET can be applied to power amplifier circuits, such as audio amplifiers and RF amplifiers. Its high current capability and low on-resistance enable it to perform well in power amplification and signal amplification.
4. **Switching circuit**: FS30ASJ-03-VB is also suitable for various switching circuits, including high-efficiency switching power supplies and load switches. Its low RDS(ON) can effectively reduce switching losses and improve system efficiency.
The high current and low on-resistance characteristics of FS30ASJ-03-VB make it excel in multiple high-efficiency and high-current applications, especially in scenarios that require optimized performance and reduced power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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