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FS2KM-18-VB Product details

Product introduction:

FS2KM-18-VB MOSFET Product Introduction

FS2KM-18-VB is a high-voltage N-channel power MOSFET in a TO220F package. It has a drain-source withstand voltage (VDS) of 950V and a continuous drain current (ID) of 3A. This MOSFET uses Planar technology, which can provide stable performance in high-voltage applications. Although its on-resistance (RDS(ON)) is relatively high at 5400mΩ@VGS=10V, the FS2KM-18-VB performs well in handling high voltage and high power situations and can effectively withstand the working pressure in high voltage environments. Its gate threshold voltage (Vth) is 3.5V and its gate-source voltage tolerance (VGS) is ±30V, making it suitable for a variety of high-voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 950V 3.5V 3A 5400mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 950V 3.5V 3A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 950V 3.5V 3A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
FS2KM-18-VB MOSFET Detailed parameter description

- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 5400mΩ @ VGS=10V
- **Continuous drain current (ID)**: 3A
- **Technology**: Planar technology
- **Power consumption**: Suitable for use in high voltage environments
- **Switching speed**: Moderate, suitable for switching control in high voltage applications
- **Drain current switching capability**: Can handle smaller current loads, but performs well in high voltage applications

Domain and module applications:

FS2KM-18-VB MOSFET Applications and Module Examples

1. **High-voltage Power Switch**: FS2KM-18-VB is suitable for high-voltage power switch applications such as high-voltage DC/DC converters and power management modules. Its 950V drain-source withstand voltage enables it to operate stably in a high-voltage environment and effectively manage the switching and protection of the power supply.

2. **Power Converter**: In power converter and inverter systems, FS2KM-18-VB can be used as a high-voltage switch component. The high withstand voltage characteristics of this MOSFET can support the stable operation of power converters under high voltage conditions and is suitable for industrial-grade power conversion equipment.

3. **High-voltage Electrical Control Systems**: This MOSFET is also suitable for high-voltage electrical control systems such as high-voltage switches and relays. Due to its high withstand voltage capability, FS2KM-18-VB is able to handle high voltage signals and provide stable switching control.

4. **Electrical insulation equipment**: In electrical insulation equipment and electrical protection systems, the high drain-source withstand voltage characteristics of FS2KM-18-VB make it suitable for high-voltage isolation and protection applications, effectively protecting circuits from high voltage.

Although the on-resistance of FS2KM-18-VB is relatively high, its excellent high withstand voltage capability makes it perform well in handling high voltage and high power applications, making it an ideal choice for various high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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