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FS2AS-14A-VB Product details
Back to previous pageProduct introduction：
1. FS2AS-14A-VB MOSFET Product Introduction
FS2AS-14A-VB is a high-voltage N-channel MOSFET in TO252 package, designed for high voltage applications. It has a maximum drain-source voltage (VDS) of 700V and can maintain an on-resistance of up to 2400mΩ at a gate drive voltage of 10V. The maximum drain current is 2A. This MOSFET uses SJ (super junction) Multi-EPI technology, providing excellent high-voltage characteristics and low on-resistance, suitable for scenarios requiring high voltage and medium current.
FS2AS-14A-VB is a high-voltage N-channel MOSFET in TO252 package, designed for high voltage applications. It has a maximum drain-source voltage (VDS) of 700V and can maintain an on-resistance of up to 2400mΩ at a gate drive voltage of 10V. The maximum drain current is 2A. This MOSFET uses SJ (super junction) Multi-EPI technology, providing excellent high-voltage characteristics and low on-resistance, suitable for scenarios requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FS2AS-14A-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 700V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ (Super Junction) Multi-EPI
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Ptot)**: TBD (please refer to the specific data sheet)
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 700V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ (Super Junction) Multi-EPI
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Ptot)**: TBD (please refer to the specific data sheet)
Domain and module applications：
3. Application fields and module examples of FS2AS-14A-VB MOSFET
FS2AS-14A-VB MOSFET performs well in multiple high-voltage applications, including:
1. **High-voltage power supply**: Due to its breakdown voltage of up to 700V, FS2AS-14A-VB MOSFET is very suitable for switching circuits of high-voltage power supplies, such as high-voltage DC power supplies and switching power supplies (SMPS), and can work stably under high voltage conditions.
2. **Power converter**: In high-voltage converters and power modules, the high withstand voltage and low on-resistance of FS2AS-14A-VB make it suitable for devices such as inverters and frequency converters to improve system efficiency and reliability.
3. **Motor drive control**: In motor drive and control systems, this MOSFET can be used as a high-voltage switching element, especially in applications with medium and low current requirements, to effectively control the start-up and operation of the motor.
4. **Protection circuit**: In high voltage protection circuits, the FS2AS-14A-VB MOSFET can be used as a switching element for high voltage switching and overvoltage protection to ensure the safety and stability of the system.
5. **Medical equipment**: For medical equipment that requires high voltage and high reliability, the FS2AS-14A-VB provides stable performance that can meet the operating requirements of the equipment in high voltage environments.
The high voltage capability and medium current handling capability of this MOSFET make it well suited for use in multiple high voltage power electronics applications.
FS2AS-14A-VB MOSFET performs well in multiple high-voltage applications, including:
1. **High-voltage power supply**: Due to its breakdown voltage of up to 700V, FS2AS-14A-VB MOSFET is very suitable for switching circuits of high-voltage power supplies, such as high-voltage DC power supplies and switching power supplies (SMPS), and can work stably under high voltage conditions.
2. **Power converter**: In high-voltage converters and power modules, the high withstand voltage and low on-resistance of FS2AS-14A-VB make it suitable for devices such as inverters and frequency converters to improve system efficiency and reliability.
3. **Motor drive control**: In motor drive and control systems, this MOSFET can be used as a high-voltage switching element, especially in applications with medium and low current requirements, to effectively control the start-up and operation of the motor.
4. **Protection circuit**: In high voltage protection circuits, the FS2AS-14A-VB MOSFET can be used as a switching element for high voltage switching and overvoltage protection to ensure the safety and stability of the system.
5. **Medical equipment**: For medical equipment that requires high voltage and high reliability, the FS2AS-14A-VB provides stable performance that can meet the operating requirements of the equipment in high voltage environments.
The high voltage capability and medium current handling capability of this MOSFET make it well suited for use in multiple high voltage power electronics applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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