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FS23N20D-VB Product details
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FS23N20D-VB MOSFET Product Introduction
FS23N20D-VB is a high-performance unipolar N-channel MOSFET in TO263 package. It is designed to meet the needs of high-voltage circuits and has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V. This MOSFET uses innovative Trench technology, which helps achieve low on-resistance (RDS(ON)) and high current handling capability, ensuring stable and reliable performance under high voltage and high load conditions. FS23N20D-VB is suitable for various power management and switching applications, which can effectively reduce power losses and improve the overall efficiency of the circuit.
FS23N20D-VB is a high-performance unipolar N-channel MOSFET in TO263 package. It is designed to meet the needs of high-voltage circuits and has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V. This MOSFET uses innovative Trench technology, which helps achieve low on-resistance (RDS(ON)) and high current handling capability, ensuring stable and reliable performance under high voltage and high load conditions. FS23N20D-VB is suitable for various power management and switching applications, which can effectively reduce power losses and improve the overall efficiency of the circuit.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
FS23N20D-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench technology
Domain and module applications：
FS23N20D-VB MOSFET Applications and Module Examples
1. **Switching Power Supply**: The high voltage tolerance and low on-resistance of FS23N20D-VB make it suitable for use in switching power supply designs. In switching power supplies, it can efficiently control the flow of current, reduce conduction losses, optimize power conversion efficiency, and improve the stability and reliability of the overall system.
2. **Battery Management System**: In battery management systems, this MOSFET can effectively handle higher currents and voltages, helping to improve efficiency during charging and discharging. Low on-resistance reduces power losses, helping to improve battery life and overall system performance.
3. **Motor Drive**: FS23N20D-VB is suitable for motor drive modules, especially in applications where high current control is required. Its high current handling capability and low RDS(ON) characteristics enable it to provide stable performance during motor startup and operation, ensuring efficient motor drive and long-term reliable operation.
Through its Trench technology, FS23N20D-VB can provide superior performance in these applications and adapt to various modules requiring high voltage and high efficiency control.
1. **Switching Power Supply**: The high voltage tolerance and low on-resistance of FS23N20D-VB make it suitable for use in switching power supply designs. In switching power supplies, it can efficiently control the flow of current, reduce conduction losses, optimize power conversion efficiency, and improve the stability and reliability of the overall system.
2. **Battery Management System**: In battery management systems, this MOSFET can effectively handle higher currents and voltages, helping to improve efficiency during charging and discharging. Low on-resistance reduces power losses, helping to improve battery life and overall system performance.
3. **Motor Drive**: FS23N20D-VB is suitable for motor drive modules, especially in applications where high current control is required. Its high current handling capability and low RDS(ON) characteristics enable it to provide stable performance during motor startup and operation, ensuring efficient motor drive and long-term reliable operation.
Through its Trench technology, FS23N20D-VB can provide superior performance in these applications and adapt to various modules requiring high voltage and high efficiency control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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