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FS22SM-9-VB Product details
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Product Introduction
**FS22SM-9-VB** is a high voltage N-channel MOSFET in TO3P package, suitable for applications requiring high withstand voltage and high current. The maximum drain-source voltage (VDS) of this MOSFET is 600V, and it can operate stably in a high voltage environment. It has a low on-resistance (RDS(ON)), which makes it perform well in high current applications. FS22SM-9-VB uses SJ_Multi-EPI technology, which improves the device's withstand voltage and thermal stability, and is suitable for use in a variety of high-power and high-voltage electronic devices.
**FS22SM-9-VB** is a high voltage N-channel MOSFET in TO3P package, suitable for applications requiring high withstand voltage and high current. The maximum drain-source voltage (VDS) of this MOSFET is 600V, and it can operate stably in a high voltage environment. It has a low on-resistance (RDS(ON)), which makes it perform well in high current applications. FS22SM-9-VB uses SJ_Multi-EPI technology, which improves the device's withstand voltage and thermal stability, and is suitable for use in a variety of high-power and high-voltage electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application Fields and Modules
**FS22SM-9-VB** MOSFET has a wide range of applications in the following fields and modules:
1. **High Power Switching Power Supply**:
- In high power switching power supplies, the high VDS and low RDS(ON) characteristics of FS22SM-9-VB make it very suitable for use as a switching element for high voltage power supplies. It can effectively control high voltage and high current loads, improve power efficiency and reduce energy loss.
2. **Electric Vehicles and Motor Control**:
- In electric vehicles and industrial motor control applications, the high current handling capability (20A) and high withstand voltage characteristics of this MOSFET make it suitable for use as a switching element in motor drives. It can work stably under high voltage and high current conditions to ensure reliable operation of the motor.
3. **Inverters and Power Converters**:
- FS22SM-9-VB can be used in inverters and power converters, especially in solar inverters and power conversion modules. It is able to handle high voltage DC power, providing efficient voltage conversion and stable output.
4. **Power Protection Circuit**:
- Due to its high withstand voltage characteristics, FS22SM-9-VB is also suitable for power protection circuits, such as overvoltage protection and overcurrent protection devices. It can help protect circuits from damage caused by overvoltage and overcurrent, ensuring the safety and stability of the system.
In general, the high voltage and high current characteristics of FS22SM-9-VB MOSFET give it significant advantages in high power applications, especially in power management and motor drive systems that require high voltage handling and high current capabilities.
**FS22SM-9-VB** MOSFET has a wide range of applications in the following fields and modules:
1. **High Power Switching Power Supply**:
- In high power switching power supplies, the high VDS and low RDS(ON) characteristics of FS22SM-9-VB make it very suitable for use as a switching element for high voltage power supplies. It can effectively control high voltage and high current loads, improve power efficiency and reduce energy loss.
2. **Electric Vehicles and Motor Control**:
- In electric vehicles and industrial motor control applications, the high current handling capability (20A) and high withstand voltage characteristics of this MOSFET make it suitable for use as a switching element in motor drives. It can work stably under high voltage and high current conditions to ensure reliable operation of the motor.
3. **Inverters and Power Converters**:
- FS22SM-9-VB can be used in inverters and power converters, especially in solar inverters and power conversion modules. It is able to handle high voltage DC power, providing efficient voltage conversion and stable output.
4. **Power Protection Circuit**:
- Due to its high withstand voltage characteristics, FS22SM-9-VB is also suitable for power protection circuits, such as overvoltage protection and overcurrent protection devices. It can help protect circuits from damage caused by overvoltage and overcurrent, ensuring the safety and stability of the system.
In general, the high voltage and high current characteristics of FS22SM-9-VB MOSFET give it significant advantages in high power applications, especially in power management and motor drive systems that require high voltage handling and high current capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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