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FS22SM-10-VB Product details
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FS22SM-10-VB MOSFET Product Introduction
FS22SM-10-VB is a high-performance single N-channel MOSFET in TO3P package, designed for high-voltage applications. Its drain-source voltage (VDS) is as high as 600V, suitable for use in high-voltage environments. The MOSFET is equipped with 30V gate-source voltage (VGS) protection and adopts SJ_Multi-EPI technology, which can provide excellent current conduction performance under high voltage conditions. Its typical turn-on voltage is 3.5V (Vth), and when VGS is 10V, its on-resistance (RDS(ON)) is only 190mΩ, supporting a maximum drain current of 20A. FS22SM-10-VB is mainly used in occasions requiring high voltage and high current, and has excellent thermal stability and reliability.
FS22SM-10-VB is a high-performance single N-channel MOSFET in TO3P package, designed for high-voltage applications. Its drain-source voltage (VDS) is as high as 600V, suitable for use in high-voltage environments. The MOSFET is equipped with 30V gate-source voltage (VGS) protection and adopts SJ_Multi-EPI technology, which can provide excellent current conduction performance under high voltage conditions. Its typical turn-on voltage is 3.5V (Vth), and when VGS is 10V, its on-resistance (RDS(ON)) is only 190mΩ, supporting a maximum drain current of 20A. FS22SM-10-VB is mainly used in occasions requiring high voltage and high current, and has excellent thermal stability and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
FS22SM-10-VB Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
FS22SM-10-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage power converter**: In high-voltage power converters, FS22SM-10-VB MOSFET can be used as the main switching device to handle high voltage input and provide stable and efficient power conversion.
2. **Industrial motor drive**: In high-voltage motor drive systems, especially where high current handling capability is required, FS22SM-10-VB can achieve efficient switching at high voltage to ensure the stability and reliability of motor drive.
3. **Switching power module**: FS22SM-10-VB is suitable for high-voltage switching functions in switching power modules, such as power factor correction (PFC) circuits and DC-DC converters (DC-DC), and can provide excellent switching performance in high voltage environments.
4. **Power control system**: In power control systems, such as high-voltage relay or contactor control circuits, this MOSFET can maintain stable working conditions under high voltage and high current conditions, and is suitable for use in complex and demanding industrial environments.
With its high voltage withstand capability and low on-resistance, the FS22SM-10-VB is an efficient and reliable choice in high-voltage, high-current application scenarios.
FS22SM-10-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage power converter**: In high-voltage power converters, FS22SM-10-VB MOSFET can be used as the main switching device to handle high voltage input and provide stable and efficient power conversion.
2. **Industrial motor drive**: In high-voltage motor drive systems, especially where high current handling capability is required, FS22SM-10-VB can achieve efficient switching at high voltage to ensure the stability and reliability of motor drive.
3. **Switching power module**: FS22SM-10-VB is suitable for high-voltage switching functions in switching power modules, such as power factor correction (PFC) circuits and DC-DC converters (DC-DC), and can provide excellent switching performance in high voltage environments.
4. **Power control system**: In power control systems, such as high-voltage relay or contactor control circuits, this MOSFET can maintain stable working conditions under high voltage and high current conditions, and is suitable for use in complex and demanding industrial environments.
With its high voltage withstand capability and low on-resistance, the FS22SM-10-VB is an efficient and reliable choice in high-voltage, high-current application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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