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FS20SM12-VB Product details
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FS20SM12-VB MOSFET Product Introduction
The FS20SM12-VB is a high voltage unipolar N-channel MOSFET packaged in a TO3P housing, designed for applications requiring efficient energy transfer and conversion. The device features a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, with excellent breakdown and overvoltage resistance. This model uses super junction (SJ) multi-epitaxial (Multi-EPI) technology, which enables it to maintain low on-resistance (RDS(ON)) and fast switching speed at high voltages, further reducing power losses and improving overall system efficiency.
The FS20SM12-VB is a high voltage unipolar N-channel MOSFET packaged in a TO3P housing, designed for applications requiring efficient energy transfer and conversion. The device features a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, with excellent breakdown and overvoltage resistance. This model uses super junction (SJ) multi-epitaxial (Multi-EPI) technology, which enables it to maintain low on-resistance (RDS(ON)) and fast switching speed at high voltages, further reducing power losses and improving overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
FS20SM12-VB MOSFET Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Superjunction (SJ) Multi-epitaxy (Multi-EPI) technology
- **Package type**: TO3P
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Superjunction (SJ) Multi-epitaxy (Multi-EPI) technology
Domain and module applications：
FS20SM12-VB MOSFET Applications and Module Examples
1. **Photovoltaic Inverter**: The high withstand voltage and low on-resistance of the FS20SM12-VB make it an ideal choice for photovoltaic inverters. It can efficiently process the DC power collected from the solar panel and convert it into AC output, ensuring minimal power loss in the process and improving the overall efficiency of the system.
2. **Power Adapter and Battery Charger**: In power adapters and battery chargers, this MOSFET can handle high voltage inputs while reducing conduction losses through its low RDS(ON) value, thereby achieving more efficient power conversion and heat dissipation management, extending the life of the equipment.
3. **Industrial Motor Drive**: In industrial motor drive applications, the FS20SM12-VB can control high voltage and high current, allowing the motor to operate at high efficiency, which is particularly important in situations where precise control and high reliability are required.
Through its advanced Super Junction (SJ) Multi-EPI technology, the FS20SM12-VB is able to provide reliable and stable performance in these demanding applications and is suitable for a variety of fields requiring high voltage conversion and control.
1. **Photovoltaic Inverter**: The high withstand voltage and low on-resistance of the FS20SM12-VB make it an ideal choice for photovoltaic inverters. It can efficiently process the DC power collected from the solar panel and convert it into AC output, ensuring minimal power loss in the process and improving the overall efficiency of the system.
2. **Power Adapter and Battery Charger**: In power adapters and battery chargers, this MOSFET can handle high voltage inputs while reducing conduction losses through its low RDS(ON) value, thereby achieving more efficient power conversion and heat dissipation management, extending the life of the equipment.
3. **Industrial Motor Drive**: In industrial motor drive applications, the FS20SM12-VB can control high voltage and high current, allowing the motor to operate at high efficiency, which is particularly important in situations where precise control and high reliability are required.
Through its advanced Super Junction (SJ) Multi-EPI technology, the FS20SM12-VB is able to provide reliable and stable performance in these demanding applications and is suitable for a variety of fields requiring high voltage conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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