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FS18SM-9-VB Product details
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FS18SM-9-VB MOSFET Product Introduction
FS18SM-9-VB is a high-performance N-channel power MOSFET in TO3P package with 600V drain-source withstand voltage (VDS) and 20A continuous drain current (ID). This device utilizes super junction (SJ) multi-epitaxial (Multi-EPI) technology to significantly reduce the on-resistance (RDS(ON)), enabling it to exhibit excellent efficiency in high-voltage and high-current applications. The on-resistance of FS18SM-9-VB is 190mΩ@VGS=10V, the gate threshold voltage (Vth) is 3.5V, and it has a gate-source voltage tolerance (VGS) of 30V. These features make it an ideal choice for high-performance, high-reliability applications.
FS18SM-9-VB is a high-performance N-channel power MOSFET in TO3P package with 600V drain-source withstand voltage (VDS) and 20A continuous drain current (ID). This device utilizes super junction (SJ) multi-epitaxial (Multi-EPI) technology to significantly reduce the on-resistance (RDS(ON)), enabling it to exhibit excellent efficiency in high-voltage and high-current applications. The on-resistance of FS18SM-9-VB is 190mΩ@VGS=10V, the gate threshold voltage (Vth) is 3.5V, and it has a gate-source voltage tolerance (VGS) of 30V. These features make it an ideal choice for high-performance, high-reliability applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
FS18SM-9-VB MOSFET Detailed parameter description
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI) technology
- **Power consumption**: High efficiency, suitable for high voltage and high current applications
- **Operating temperature range**: Suitable for stable operation in a wide temperature range
- **Switching speed**: Fast switching characteristics, suitable for high frequency applications
- **Drain current switching capability**: Optimized switching loss and thermal performance
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI) technology
- **Power consumption**: High efficiency, suitable for high voltage and high current applications
- **Operating temperature range**: Suitable for stable operation in a wide temperature range
- **Switching speed**: Fast switching characteristics, suitable for high frequency applications
- **Drain current switching capability**: Optimized switching loss and thermal performance
Domain and module applications：
FS18SM-9-VB MOSFET Applications and Module Examples
1. **Power Modules**: FS18SM-9-VB performs well in high-efficiency power management systems, especially in AC/DC converters, DC/DC converters, and uninterruptible power supplies (UPS), where it can help reduce energy consumption and improve the overall efficiency of the system.
2. **Electric Vehicle (EV) Drive Systems**: Due to its high withstand voltage and high current handling capabilities, FS18SM-9-VB is ideal for motor drive modules in electric vehicles, providing stable and reliable current output and ensuring system safety and efficiency at high voltages.
3. **Industrial Automation**: This MOSFET is also widely used in industrial control systems, especially in applications that require high reliability and fast response, such as servo motor drives and inverters, where FS18SM-9-VB can effectively reduce power consumption and improve system performance.
4. **Solar Inverter**: In solar photovoltaic systems, FS18SM-9-VB can be used in inverter modules to help achieve efficient energy conversion, support higher power density and lower heat loss.
FS18SM-9-VB is a MOSFET that can demonstrate superior performance in a variety of high-voltage, high-efficiency applications, providing system designers with a wide range of application options and optimized design space.
1. **Power Modules**: FS18SM-9-VB performs well in high-efficiency power management systems, especially in AC/DC converters, DC/DC converters, and uninterruptible power supplies (UPS), where it can help reduce energy consumption and improve the overall efficiency of the system.
2. **Electric Vehicle (EV) Drive Systems**: Due to its high withstand voltage and high current handling capabilities, FS18SM-9-VB is ideal for motor drive modules in electric vehicles, providing stable and reliable current output and ensuring system safety and efficiency at high voltages.
3. **Industrial Automation**: This MOSFET is also widely used in industrial control systems, especially in applications that require high reliability and fast response, such as servo motor drives and inverters, where FS18SM-9-VB can effectively reduce power consumption and improve system performance.
4. **Solar Inverter**: In solar photovoltaic systems, FS18SM-9-VB can be used in inverter modules to help achieve efficient energy conversion, support higher power density and lower heat loss.
FS18SM-9-VB is a MOSFET that can demonstrate superior performance in a variety of high-voltage, high-efficiency applications, providing system designers with a wide range of application options and optimized design space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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