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FS10SM-18-VB Product details
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Product Introduction
**FS10SM-18-VB** is a high-voltage single N-channel MOSFET packaged in TO3P. It uses SJ_Multi-EPI technology and is designed for high-voltage applications, capable of handling drain-source voltages up to 900V. With an on-resistance of 750mΩ and a maximum drain current of 9A, this MOSFET is suitable for use in circuits requiring high voltage resistance and reliable performance. FS10SM-18-VB provides excellent switching performance and current handling capabilities, making it an ideal choice for high-voltage applications.
**FS10SM-18-VB** is a high-voltage single N-channel MOSFET packaged in TO3P. It uses SJ_Multi-EPI technology and is designed for high-voltage applications, capable of handling drain-source voltages up to 900V. With an on-resistance of 750mΩ and a maximum drain current of 9A, this MOSFET is suitable for use in circuits requiring high voltage resistance and reliable performance. FS10SM-18-VB provides excellent switching performance and current handling capabilities, making it an ideal choice for high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: FS10SM-18-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Model**: FS10SM-18-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Module Examples
1. **High Voltage Power Switch**:
- In high voltage power switching applications, the 900V withstand voltage capability of the FS10SM-18-VB makes it ideal for handling high voltage loads. It can effectively switch in power management modules and high voltage DC-DC converters to ensure stable and reliable power supply.
2. **Inverter**:
- In inverter circuits, the FS10SM-18-VB can be used to convert direct current (DC) to alternating current (AC). Due to its high voltage withstand capability and good conduction performance, this MOSFET can provide efficient switching functions in high voltage inverter applications to ensure efficient operation of the system.
3. **Industrial Power Management**:
- In industrial power management systems, the FS10SM-18-VB can be used for the control and protection of high voltage loads. Its high withstand voltage and stable performance make it suitable for power switching of high power devices such as industrial motor drives and power conversion systems.
4. **Electric Vehicle Charging System**:
- In the charging system of electric vehicles, the high withstand voltage characteristics of FS10SM-18-VB can be used to handle the switching operation during high voltage charging. It can effectively control the charging current, protect the battery pack and charging equipment, and ensure the safety and efficiency of the charging process.
The above is the product introduction, detailed parameters and application fields of FS10SM-18-VB MOSFET. With its high withstand voltage and excellent current handling capabilities, this MOSFET provides a reliable solution in various high voltage and high power applications.
1. **High Voltage Power Switch**:
- In high voltage power switching applications, the 900V withstand voltage capability of the FS10SM-18-VB makes it ideal for handling high voltage loads. It can effectively switch in power management modules and high voltage DC-DC converters to ensure stable and reliable power supply.
2. **Inverter**:
- In inverter circuits, the FS10SM-18-VB can be used to convert direct current (DC) to alternating current (AC). Due to its high voltage withstand capability and good conduction performance, this MOSFET can provide efficient switching functions in high voltage inverter applications to ensure efficient operation of the system.
3. **Industrial Power Management**:
- In industrial power management systems, the FS10SM-18-VB can be used for the control and protection of high voltage loads. Its high withstand voltage and stable performance make it suitable for power switching of high power devices such as industrial motor drives and power conversion systems.
4. **Electric Vehicle Charging System**:
- In the charging system of electric vehicles, the high withstand voltage characteristics of FS10SM-18-VB can be used to handle the switching operation during high voltage charging. It can effectively control the charging current, protect the battery pack and charging equipment, and ensure the safety and efficiency of the charging process.
The above is the product introduction, detailed parameters and application fields of FS10SM-18-VB MOSFET. With its high withstand voltage and excellent current handling capabilities, this MOSFET provides a reliable solution in various high voltage and high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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