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FS10ASJ-06-T13-VB Product details
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Product Introduction
**FS10ASJ-06-T13-VB** is a high-performance N-Channel MOSFET in TO252 package. This MOSFET is designed to handle high voltage and high current applications, with excellent switching performance and low on-resistance. It uses Trench technology to improve efficiency and reduce energy loss. It is mainly suitable for various electronic devices and power management systems.
**FS10ASJ-06-T13-VB** is a high-performance N-Channel MOSFET in TO252 package. This MOSFET is designed to handle high voltage and high current applications, with excellent switching performance and low on-resistance. It uses Trench technology to improve efficiency and reduce energy loss. It is mainly suitable for various electronic devices and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: FS10ASJ-06-T13-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench technology
- **Model**: FS10ASJ-06-T13-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
1. **Power Management**:
FS10ASJ-06-T13-VB can be used in various power management applications, such as DC-DC converters and power switches. The low on-resistance of this MOSFET enables it to effectively reduce energy loss and improve overall efficiency during power conversion.
2. **Switching Circuits**:
In switching circuits, such as motor drives and power amplifiers, FS10ASJ-06-T13-VB can be used as a switching device. Its low threshold voltage and low on-resistance enable it to perform well in high-frequency switching operations, respond quickly to switching signals and reduce switching losses.
3. **Automotive Electronics**:
In the automotive electronics field, such as electric vehicle charging systems and on-board power management modules, the high current handling capability and stable performance of FS10ASJ-06-T13-VB make it suitable for on-board power conversion and control systems. It can provide reliable performance and meet the stringent requirements of the automotive environment.
4. **Communication equipment**:
This MOSFET is also suitable for power amplifiers and signal processing modules in communication equipment. Its low on-resistance and high current capability can ensure efficient signal transmission and processing, improving the overall performance of the equipment.
Through the above application examples, FS10ASJ-06-T13-VB demonstrates its wide applicability in high-efficiency power conversion, reliable switching operation, automotive electronics and communication equipment.
1. **Power Management**:
FS10ASJ-06-T13-VB can be used in various power management applications, such as DC-DC converters and power switches. The low on-resistance of this MOSFET enables it to effectively reduce energy loss and improve overall efficiency during power conversion.
2. **Switching Circuits**:
In switching circuits, such as motor drives and power amplifiers, FS10ASJ-06-T13-VB can be used as a switching device. Its low threshold voltage and low on-resistance enable it to perform well in high-frequency switching operations, respond quickly to switching signals and reduce switching losses.
3. **Automotive Electronics**:
In the automotive electronics field, such as electric vehicle charging systems and on-board power management modules, the high current handling capability and stable performance of FS10ASJ-06-T13-VB make it suitable for on-board power conversion and control systems. It can provide reliable performance and meet the stringent requirements of the automotive environment.
4. **Communication equipment**:
This MOSFET is also suitable for power amplifiers and signal processing modules in communication equipment. Its low on-resistance and high current capability can ensure efficient signal transmission and processing, improving the overall performance of the equipment.
Through the above application examples, FS10ASJ-06-T13-VB demonstrates its wide applicability in high-efficiency power conversion, reliable switching operation, automotive electronics and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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