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FS10AS-3-T13-VB Product details
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FS10AS-3-T13-VB MOSFET Product Introduction
FS10AS-3-T13-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. This MOSFET uses Trench technology to provide low on-resistance and excellent current handling capability. Its drain-source voltage (VDS) is 150V, making it suitable for circuits requiring medium and high voltage control. The threshold voltage (Vth) of FS10AS-3-T13-VB is 2.5V, and the gate-source voltage (VGS) range is ±20V, ensuring a wide range of compatibility. Its on-resistance (RDS(ON)) is 74mΩ at VGS = 10V, while its maximum continuous drain current (ID) is 25.4A, making it an excellent performer in high current applications.
FS10AS-3-T13-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. This MOSFET uses Trench technology to provide low on-resistance and excellent current handling capability. Its drain-source voltage (VDS) is 150V, making it suitable for circuits requiring medium and high voltage control. The threshold voltage (Vth) of FS10AS-3-T13-VB is 2.5V, and the gate-source voltage (VGS) range is ±20V, ensuring a wide range of compatibility. Its on-resistance (RDS(ON)) is 74mΩ at VGS = 10V, while its maximum continuous drain current (ID) is 25.4A, making it an excellent performer in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | 74mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FS10AS-3-T13-VB MOSFET parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 74mΩ (VGS=10V)
- **Continuous drain current (ID)**: 25.4A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 74mΩ (VGS=10V)
- **Continuous drain current (ID)**: 25.4A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power switch**:
The high voltage and high current capabilities of the FS10AS-3-T13-VB make it an excellent choice in power switching applications. It can be used as the main switch in a switching power supply, handling high voltage and high current loads, ensuring efficiency and stability of power management. For example, it can be used in DC-DC converters and switching regulators to control the flow of power and optimize power conversion efficiency.
2. **Electric vehicle (EV) charging**:
In electric vehicle charging systems, the high current carrying capacity and medium to high voltage specifications of the FS10AS-3-T13-VB make it an ideal choice. It can be used in charging control circuits to handle high voltage and high current loads, improving the reliability and efficiency of the charging system.
3. **Motor drive**:
The FS10AS-3-T13-VB is able to handle higher currents and provide low on-resistance, making it suitable for motor drive applications. It can be used to control the switching signals of the motor, providing efficient switching operations in motor controllers and drive modules, thereby improving the performance and efficiency of the motor system.
4. **Power Amplifier**:
In power amplifier applications, the high voltage and high current handling capabilities of the FS10AS-3-T13-VB enable it to effectively switch the current of the power amplifier, improving the efficiency and stability of the amplifier. Its low RDS(ON) characteristics help reduce power losses and ensure efficient operation of the amplifier.
These application examples demonstrate the advantages of the FS10AS-3-T13-VB in high voltage and high current environments, and are particularly suitable for electronic systems that require high performance and reliability.
1. **Power switch**:
The high voltage and high current capabilities of the FS10AS-3-T13-VB make it an excellent choice in power switching applications. It can be used as the main switch in a switching power supply, handling high voltage and high current loads, ensuring efficiency and stability of power management. For example, it can be used in DC-DC converters and switching regulators to control the flow of power and optimize power conversion efficiency.
2. **Electric vehicle (EV) charging**:
In electric vehicle charging systems, the high current carrying capacity and medium to high voltage specifications of the FS10AS-3-T13-VB make it an ideal choice. It can be used in charging control circuits to handle high voltage and high current loads, improving the reliability and efficiency of the charging system.
3. **Motor drive**:
The FS10AS-3-T13-VB is able to handle higher currents and provide low on-resistance, making it suitable for motor drive applications. It can be used to control the switching signals of the motor, providing efficient switching operations in motor controllers and drive modules, thereby improving the performance and efficiency of the motor system.
4. **Power Amplifier**:
In power amplifier applications, the high voltage and high current handling capabilities of the FS10AS-3-T13-VB enable it to effectively switch the current of the power amplifier, improving the efficiency and stability of the amplifier. Its low RDS(ON) characteristics help reduce power losses and ensure efficient operation of the amplifier.
These application examples demonstrate the advantages of the FS10AS-3-T13-VB in high voltage and high current environments, and are particularly suitable for electronic systems that require high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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