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FR6215-VB Product details
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FR6215-VB MOSFET Product Introduction
**Product Overview: **
FR6215-VB is a high-performance P-Channel MOSFET designed for high voltage and medium current applications. It adopts TO252 package, has excellent thermal performance and compact size, suitable for applications with limited space and high voltage tolerance. The MOSFET can withstand a maximum drain-source voltage (VDS) of -150V and a continuous drain current (ID) of -15A, and uses Trench technology to effectively reduce the on-resistance, ensuring efficient operation under high load conditions.
**Main Features:**
- **Package:** TO252
- **Configuration:** Single P-Channel
- **VDS:** -150V
- **VGS:** ±20V
- **Vth (Threshold Voltage):** -2V
- **RDS(ON):** 160mΩ @ VGS = -10V
- **ID (Continuous Drain Current):** -15A
- **Technology:** Trench
**Product Overview: **
FR6215-VB is a high-performance P-Channel MOSFET designed for high voltage and medium current applications. It adopts TO252 package, has excellent thermal performance and compact size, suitable for applications with limited space and high voltage tolerance. The MOSFET can withstand a maximum drain-source voltage (VDS) of -150V and a continuous drain current (ID) of -15A, and uses Trench technology to effectively reduce the on-resistance, ensuring efficient operation under high load conditions.
**Main Features:**
- **Package:** TO252
- **Configuration:** Single P-Channel
- **VDS:** -150V
- **VGS:** ±20V
- **Vth (Threshold Voltage):** -2V
- **RDS(ON):** 160mΩ @ VGS = -10V
- **ID (Continuous Drain Current):** -15A
- **Technology:** Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | 160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
1. **Package:** TO252
- **Description:** This package is small and compact, suitable for surface mount designs that require space saving, while providing excellent thermal management performance.
2. **Configuration:** Single P-Channel
- **Description:** Single P-Channel configuration, suitable for a variety of switching and amplification applications that require reverse current control.
3. **VDS (Drain-Source Voltage):** -150V
- **Description:** The maximum reverse voltage between the drain and source that this MOSFET can withstand, suitable for high voltage applications.
4. **VGS (Gate-Source Voltage):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source to ensure stable operation of the device.
5. **Vth（Threshold Voltage）：** -2V
- **Description：** The minimum gate-source voltage required to turn on the MOSFET. Below this voltage, the MOSFET will be in the off state.
6. **RDS(ON)（On-resistance）：**
- **160mΩ @ VGS = -10V：** The resistance between the drain and the source when the gate-source voltage is -10V.
7. **ID（Continuous Drain Current）：** -15A
- **Description：** The maximum continuous current that the drain can carry when the MOSFET is fully turned on.
8. **Technology：** Trench
- **Description：** Trench technology is used to effectively reduce on-resistance, increase switching speed, and enhance overall efficiency and performance.
1. **Package:** TO252
- **Description:** This package is small and compact, suitable for surface mount designs that require space saving, while providing excellent thermal management performance.
2. **Configuration:** Single P-Channel
- **Description:** Single P-Channel configuration, suitable for a variety of switching and amplification applications that require reverse current control.
3. **VDS (Drain-Source Voltage):** -150V
- **Description:** The maximum reverse voltage between the drain and source that this MOSFET can withstand, suitable for high voltage applications.
4. **VGS (Gate-Source Voltage):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source to ensure stable operation of the device.
5. **Vth（Threshold Voltage）：** -2V
- **Description：** The minimum gate-source voltage required to turn on the MOSFET. Below this voltage, the MOSFET will be in the off state.
6. **RDS(ON)（On-resistance）：**
- **160mΩ @ VGS = -10V：** The resistance between the drain and the source when the gate-source voltage is -10V.
7. **ID（Continuous Drain Current）：** -15A
- **Description：** The maximum continuous current that the drain can carry when the MOSFET is fully turned on.
8. **Technology：** Trench
- **Description：** Trench technology is used to effectively reduce on-resistance, increase switching speed, and enhance overall efficiency and performance.
Domain and module applications：
Applications and Examples
**1. Reverse Current Protection Circuit: **
- **Example: ** In reverse current protection circuit, FR6215-VB can be used as an efficient reverse current control element to ensure safe operation of the circuit under high voltage reverse current. Its high voltage tolerance and medium current capability make it particularly suitable for power management systems that require high reliability and high efficiency.
**2. DC Load Switch: **
- **Example: ** In DC load switch applications, FR6215-VB can be used to control the on and off of load current, especially suitable for switching control of high voltage DC loads. Its low on-resistance and high voltage specifications make it excel in high power load control.
**3. Battery Management System (BMS): **
- **Example: ** In battery management systems, FR6215-VB can be used for battery discharge control, handling high voltage and medium current management tasks. Its P-Channel characteristics give it good performance in the reverse current path, providing efficient battery protection.
**4. Power reverse polarity protection: **
- **Example:** In the power reverse polarity protection circuit, FR6215-VB can be used as a key protection component to prevent reverse voltage from damaging the device. Its high voltage tolerance and stable conduction performance make it suitable for use in electronic devices that require strong protection.
**5. P-Channel switch in DC-DC converter: **
- **Example:** In the DC-DC converter circuit, FR6215-VB can be used as a P-Channel switch to control the flow of current. Its high voltage and medium current specifications, combined with low on-resistance, can improve conversion efficiency and adapt to various voltage conversion needs.
FR6215-VB MOSFET is suitable for a variety of applications requiring high voltage tolerance and medium current control through its high voltage and medium current specifications, providing stable performance and efficient operation, suitable for use in a variety of industrial and consumer electronic applications.
**1. Reverse Current Protection Circuit: **
- **Example: ** In reverse current protection circuit, FR6215-VB can be used as an efficient reverse current control element to ensure safe operation of the circuit under high voltage reverse current. Its high voltage tolerance and medium current capability make it particularly suitable for power management systems that require high reliability and high efficiency.
**2. DC Load Switch: **
- **Example: ** In DC load switch applications, FR6215-VB can be used to control the on and off of load current, especially suitable for switching control of high voltage DC loads. Its low on-resistance and high voltage specifications make it excel in high power load control.
**3. Battery Management System (BMS): **
- **Example: ** In battery management systems, FR6215-VB can be used for battery discharge control, handling high voltage and medium current management tasks. Its P-Channel characteristics give it good performance in the reverse current path, providing efficient battery protection.
**4. Power reverse polarity protection: **
- **Example:** In the power reverse polarity protection circuit, FR6215-VB can be used as a key protection component to prevent reverse voltage from damaging the device. Its high voltage tolerance and stable conduction performance make it suitable for use in electronic devices that require strong protection.
**5. P-Channel switch in DC-DC converter: **
- **Example:** In the DC-DC converter circuit, FR6215-VB can be used as a P-Channel switch to control the flow of current. Its high voltage and medium current specifications, combined with low on-resistance, can improve conversion efficiency and adapt to various voltage conversion needs.
FR6215-VB MOSFET is suitable for a variety of applications requiring high voltage tolerance and medium current control through its high voltage and medium current specifications, providing stable performance and efficient operation, suitable for use in a variety of industrial and consumer electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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