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FR5505C-VB Product details
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Product Introduction:
FR5505C-VB is a high-performance single P-channel MOSFET in TO252 package, designed for applications requiring reverse current control such as load switching and power management. This MOSFET supports a drain-source voltage (VDS) of up to -60V and a gate-source voltage (VGS) of ±20V. Using advanced trench technology, FR5505C-VB can achieve lower on-resistance (RDS(ON)) at lower gate voltages. It has a continuous drain current (ID) capability of up to -35A, making it an ideal choice for high performance and low power consumption requirements.
FR5505C-VB is a high-performance single P-channel MOSFET in TO252 package, designed for applications requiring reverse current control such as load switching and power management. This MOSFET supports a drain-source voltage (VDS) of up to -60V and a gate-source voltage (VGS) of ±20V. Using advanced trench technology, FR5505C-VB can achieve lower on-resistance (RDS(ON)) at lower gate voltages. It has a continuous drain current (ID) capability of up to -35A, making it an ideal choice for high performance and low power consumption requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 58mΩ @ VGS=4.5V
- 46mΩ @ VGS=10V
- **Continuous drain current (ID)**: -35A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 58mΩ @ VGS=4.5V
- 46mΩ @ VGS=10V
- **Continuous drain current (ID)**: -35A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules:
The P-channel characteristics and excellent current handling capabilities of the FR5505C-VB MOSFET enable it to perform well in multiple fields and modules, especially in the following application scenarios:
1. **Load switch**: In power management modules, the FR5505C-VB is often used in load switch circuits. Due to its P-channel configuration, the FR5505C-VB can provide reliable performance in situations where reverse current switching is required, and is particularly suitable for use in high-performance portable devices and battery-powered devices.
2. **Reverse current protection**: In battery protection circuits and other modules that need to prevent reverse current, the FR5505C-VB can effectively prevent current from flowing in reverse and protect key electronic components from damage. Its high load current capability and low conduction loss ensure the efficiency and safety of the system.
3. **Power Management and Regulation**: In power management unit (PMU) and linear regulator applications, the low on-resistance and high current capability of FR5505C-VB can optimize power transfer efficiency and reduce power loss, making it very suitable for electronic systems that require stable power management.
4. **DC-DC Converter**: In DC-DC converters, especially synchronous buck converters (Buck Converters), the P-channel characteristics of FR5505C-VB make it suitable for use as a high-side switch, thereby improving conversion efficiency and overall performance.
These application scenarios demonstrate the indispensable role of FR5505C-VB in modern electronic systems, especially in designs that require efficient and reliable power management and reverse current protection.
The P-channel characteristics and excellent current handling capabilities of the FR5505C-VB MOSFET enable it to perform well in multiple fields and modules, especially in the following application scenarios:
1. **Load switch**: In power management modules, the FR5505C-VB is often used in load switch circuits. Due to its P-channel configuration, the FR5505C-VB can provide reliable performance in situations where reverse current switching is required, and is particularly suitable for use in high-performance portable devices and battery-powered devices.
2. **Reverse current protection**: In battery protection circuits and other modules that need to prevent reverse current, the FR5505C-VB can effectively prevent current from flowing in reverse and protect key electronic components from damage. Its high load current capability and low conduction loss ensure the efficiency and safety of the system.
3. **Power Management and Regulation**: In power management unit (PMU) and linear regulator applications, the low on-resistance and high current capability of FR5505C-VB can optimize power transfer efficiency and reduce power loss, making it very suitable for electronic systems that require stable power management.
4. **DC-DC Converter**: In DC-DC converters, especially synchronous buck converters (Buck Converters), the P-channel characteristics of FR5505C-VB make it suitable for use as a high-side switch, thereby improving conversion efficiency and overall performance.
These application scenarios demonstrate the indispensable role of FR5505C-VB in modern electronic systems, especially in designs that require efficient and reliable power management and reverse current protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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