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FR540Z-VB Product details
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FR540Z-VB MOSFET Product Introduction
FR540Z-VB is a high-efficiency N-channel MOSFET designed for applications requiring high voltage and high current. This MOSFET adopts TO252 package, which is suitable for surface mounting and can provide high performance in a limited space. Its maximum drain-source voltage (VDS) is 100V, which is suitable for medium and high voltage switching applications. The threshold voltage (Vth) is 1.8V, which ensures that it can be turned on at a lower gate-source voltage. FR540Z-VB provides low on-resistance, RDS(ON) is 35mΩ when VGS is 4.5V, and RDS(ON) is 30mΩ when VGS is 10V, which makes it have low power loss in high current applications. Its maximum continuous drain current (ID) is 40A, which is suitable for high power applications. FR540Z-VB adopts trench technology, providing excellent switching efficiency and good thermal management characteristics.
FR540Z-VB is a high-efficiency N-channel MOSFET designed for applications requiring high voltage and high current. This MOSFET adopts TO252 package, which is suitable for surface mounting and can provide high performance in a limited space. Its maximum drain-source voltage (VDS) is 100V, which is suitable for medium and high voltage switching applications. The threshold voltage (Vth) is 1.8V, which ensures that it can be turned on at a lower gate-source voltage. FR540Z-VB provides low on-resistance, RDS(ON) is 35mΩ when VGS is 4.5V, and RDS(ON) is 30mΩ when VGS is 10V, which makes it have low power loss in high current applications. Its maximum continuous drain current (ID) is 40A, which is suitable for high power applications. FR540Z-VB adopts trench technology, providing excellent switching efficiency and good thermal management characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
The TO252 package is a compact surface mount package suitable for high power applications with good heat dissipation.
- **Configuration**: Single N-channel
The FR540Z-VB adopts a single N-channel configuration, suitable for switching applications requiring high current and low RDS(ON).
- **Drain-source voltage (VDS)**: 100V
The maximum drain-source voltage is 100V, suitable for medium and high voltage circuits.
- **Gate-source voltage (VGS)**: ±20V
The gate-source voltage is rated at ±20V, providing reliable gate control for efficient switching operation.
- **Threshold voltage (Vth)**: 1.8V
When the gate-source voltage reaches 1.8V, the MOSFET begins to turn on, providing a lower switching threshold.
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
At 4.5V gate-source voltage, the on-resistance is 35mΩ, and at 10V gate-source voltage it is 30mΩ, ensuring low power loss and efficient operation.
- **Continuous leakage current (ID)**: 40A
The device can support up to 40A of continuous leakage current, suitable for high current applications.
- **Technology**: Trench technology
FR540Z-VB adopts trench technology, which improves the switching performance and thermal characteristics of the MOSFET, ensuring reliability in various applications.
- **Package**: TO252
The TO252 package is a compact surface mount package suitable for high power applications with good heat dissipation.
- **Configuration**: Single N-channel
The FR540Z-VB adopts a single N-channel configuration, suitable for switching applications requiring high current and low RDS(ON).
- **Drain-source voltage (VDS)**: 100V
The maximum drain-source voltage is 100V, suitable for medium and high voltage circuits.
- **Gate-source voltage (VGS)**: ±20V
The gate-source voltage is rated at ±20V, providing reliable gate control for efficient switching operation.
- **Threshold voltage (Vth)**: 1.8V
When the gate-source voltage reaches 1.8V, the MOSFET begins to turn on, providing a lower switching threshold.
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
At 4.5V gate-source voltage, the on-resistance is 35mΩ, and at 10V gate-source voltage it is 30mΩ, ensuring low power loss and efficient operation.
- **Continuous leakage current (ID)**: 40A
The device can support up to 40A of continuous leakage current, suitable for high current applications.
- **Technology**: Trench technology
FR540Z-VB adopts trench technology, which improves the switching performance and thermal characteristics of the MOSFET, ensuring reliability in various applications.
Domain and module applications：
Application Examples
1. **Power Management System**
FR540Z-VB is suitable for power management systems such as DC-DC converters and power switches. Its low on-resistance and high current handling capability enable low power loss in power conversion, improving system efficiency.
2. **Motor Drive**
In motor drive circuits, FR540Z-VB can be used as a high current switch to provide stable and efficient motor control, especially for industrial and automotive applications that require medium and high voltage control.
3. **Solar Inverter**
FR540Z-VB performs well in solar inverters, effectively handling high voltage input and converting it into a stable output, suitable for efficient power management and energy conversion.
4. **Uninterruptible Power Supply (UPS) System**
This MOSFET is suitable for high voltage switch control in UPS systems, ensuring reliable power management and switching functions in high voltage environments.
Through these parameters and application examples, FR540Z-VB MOSFET demonstrates its powerful performance and wide applicability in power management, industrial control and power conversion.
1. **Power Management System**
FR540Z-VB is suitable for power management systems such as DC-DC converters and power switches. Its low on-resistance and high current handling capability enable low power loss in power conversion, improving system efficiency.
2. **Motor Drive**
In motor drive circuits, FR540Z-VB can be used as a high current switch to provide stable and efficient motor control, especially for industrial and automotive applications that require medium and high voltage control.
3. **Solar Inverter**
FR540Z-VB performs well in solar inverters, effectively handling high voltage input and converting it into a stable output, suitable for efficient power management and energy conversion.
4. **Uninterruptible Power Supply (UPS) System**
This MOSFET is suitable for high voltage switch control in UPS systems, ensuring reliable power management and switching functions in high voltage environments.
Through these parameters and application examples, FR540Z-VB MOSFET demonstrates its powerful performance and wide applicability in power management, industrial control and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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