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FR430BTF-VB Product details
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FR430BTF-VB MOSFET Product Introduction
FR430BTF-VB is a high voltage N-channel MOSFET designed for applications requiring high voltage and high reliability. This MOSFET adopts TO252 package, which is suitable for surface mounting and can meet the requirements of high voltage and medium current. Its maximum drain-source voltage (VDS) is 650V, which is suitable for high voltage switching applications. The threshold voltage (Vth) is 3.5V, ensuring turn-on at a lower gate-source voltage. The on-resistance (RDS(ON)) of FR430BTF-VB is 1000mΩ (at VGS of 10V), which has a certain power loss. Its continuous leakage current (ID) is 5A, which is suitable for medium current power switching applications. This MOSFET adopts SJ_Multi-EPI technology, providing better performance and reliability.
FR430BTF-VB is a high voltage N-channel MOSFET designed for applications requiring high voltage and high reliability. This MOSFET adopts TO252 package, which is suitable for surface mounting and can meet the requirements of high voltage and medium current. Its maximum drain-source voltage (VDS) is 650V, which is suitable for high voltage switching applications. The threshold voltage (Vth) is 3.5V, ensuring turn-on at a lower gate-source voltage. The on-resistance (RDS(ON)) of FR430BTF-VB is 1000mΩ (at VGS of 10V), which has a certain power loss. Its continuous leakage current (ID) is 5A, which is suitable for medium current power switching applications. This MOSFET adopts SJ_Multi-EPI technology, providing better performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
The TO252 package is a surface mount package with a compact shape and effective heat dissipation, suitable for high power and high voltage applications.
- **Configuration**: Single N-channel
The FR430BTF-VB adopts a single N-channel configuration, suitable for switching applications requiring high voltage and medium current.
- **Drain-source voltage (VDS)**: 650V
The maximum drain-source voltage is 650V, suitable for high voltage circuits.
- **Gate-source voltage (VGS)**: ±30V
The gate-source voltage is rated at ±30V, providing stable gate control to ensure that the MOSFET can still work reliably at high voltage.
- **Threshold Voltage (Vth)**: 3.5V
When the gate-source voltage reaches 3.5V, the MOSFET starts to turn on, providing a moderate switching threshold.
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
At 10V gate-source voltage, the on-resistance is 1000mΩ, suitable for medium current high voltage switching applications.
- **Continuous Drain Current (ID)**: 5A
The device can support up to 5A of continuous drain current, suitable for medium current power applications.
- **Technology**: SJ_Multi-EPI
FR430BTF-VB adopts SJ_Multi-EPI technology, providing excellent high voltage performance and reliability, suitable for high reliability requirements in high voltage applications.
- **Package**: TO252
The TO252 package is a surface mount package with a compact shape and effective heat dissipation, suitable for high power and high voltage applications.
- **Configuration**: Single N-channel
The FR430BTF-VB adopts a single N-channel configuration, suitable for switching applications requiring high voltage and medium current.
- **Drain-source voltage (VDS)**: 650V
The maximum drain-source voltage is 650V, suitable for high voltage circuits.
- **Gate-source voltage (VGS)**: ±30V
The gate-source voltage is rated at ±30V, providing stable gate control to ensure that the MOSFET can still work reliably at high voltage.
- **Threshold Voltage (Vth)**: 3.5V
When the gate-source voltage reaches 3.5V, the MOSFET starts to turn on, providing a moderate switching threshold.
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
At 10V gate-source voltage, the on-resistance is 1000mΩ, suitable for medium current high voltage switching applications.
- **Continuous Drain Current (ID)**: 5A
The device can support up to 5A of continuous drain current, suitable for medium current power applications.
- **Technology**: SJ_Multi-EPI
FR430BTF-VB adopts SJ_Multi-EPI technology, providing excellent high voltage performance and reliability, suitable for high reliability requirements in high voltage applications.
Domain and module applications：
Application Examples
1. **Power Converter**
FR430BTF-VB is very suitable for high voltage power converters, such as high voltage DC-DC converters. Its high drain-source voltage and moderate on-resistance enable it to have good switching performance in high voltage environments.
2. **Switching Power Supply**
In a switching power supply, FR430BTF-VB can be used as a high voltage switch. Its high voltage rating and stable performance make it suitable for high voltage switching power supply design.
3. **Motor Drive**
FR430BTF-VB can be used in high voltage motor drive circuits, especially in applications that require high voltage drive, such as industrial motor control systems. Its high voltage tolerance and medium current handling capability make it suitable for such applications.
4. **Inverter Systems**
In inverter systems, the high voltage rating and high reliability of the FR430BTF-VB make it suitable for high voltage inverter designs such as solar inverters and other high voltage power systems.
These product profiles, detailed parameters and application examples demonstrate the superior performance and wide applicability of the FR430BTF-VB MOSFET in high voltage and high reliability applications.
1. **Power Converter**
FR430BTF-VB is very suitable for high voltage power converters, such as high voltage DC-DC converters. Its high drain-source voltage and moderate on-resistance enable it to have good switching performance in high voltage environments.
2. **Switching Power Supply**
In a switching power supply, FR430BTF-VB can be used as a high voltage switch. Its high voltage rating and stable performance make it suitable for high voltage switching power supply design.
3. **Motor Drive**
FR430BTF-VB can be used in high voltage motor drive circuits, especially in applications that require high voltage drive, such as industrial motor control systems. Its high voltage tolerance and medium current handling capability make it suitable for such applications.
4. **Inverter Systems**
In inverter systems, the high voltage rating and high reliability of the FR430BTF-VB make it suitable for high voltage inverter designs such as solar inverters and other high voltage power systems.
These product profiles, detailed parameters and application examples demonstrate the superior performance and wide applicability of the FR430BTF-VB MOSFET in high voltage and high reliability applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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