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FR420BTM-VB Product details
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FR420BTM-VB MOSFET Overview
The FR420BTM-VB is a high voltage single N-channel MOSFET in a TO252 package. It is manufactured using conventional Planar technology and features a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. With a threshold voltage (Vth) of 3.5V and a relatively high on-resistance (RDS(ON)) of 2750mΩ (at VGS=4.5V) and 2200mΩ (at VGS=10V), this MOSFET is suitable for medium current and high voltage applications. The FR420BTM-VB is designed for power conversion and switching applications that require high voltage resistance.
The FR420BTM-VB is a high voltage single N-channel MOSFET in a TO252 package. It is manufactured using conventional Planar technology and features a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. With a threshold voltage (Vth) of 3.5V and a relatively high on-resistance (RDS(ON)) of 2750mΩ (at VGS=4.5V) and 2200mΩ (at VGS=10V), this MOSFET is suitable for medium current and high voltage applications. The FR420BTM-VB is designed for power conversion and switching applications that require high voltage resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):**
- 2750mΩ @ VGS = 4.5V
- 2200mΩ @ VGS = 10V
- **Continuous drain current (ID):** 4A
- **Technology:** Planar
This MOSFET is suitable for power switching applications that need to withstand high voltage. Although its on-resistance is high, it is stable in high voltage environment and can meet applications with specific current and voltage requirements.
- **Package:** TO252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):**
- 2750mΩ @ VGS = 4.5V
- 2200mΩ @ VGS = 10V
- **Continuous drain current (ID):** 4A
- **Technology:** Planar
This MOSFET is suitable for power switching applications that need to withstand high voltage. Although its on-resistance is high, it is stable in high voltage environment and can meet applications with specific current and voltage requirements.
Domain and module applications：
Application Examples and Related Fields
1. **High Voltage Power Switch:**
- FR420BTM-VB can be used for high voltage power switch applications, such as switching control of high voltage power supplies. Its 650V drain-source voltage enables it to work stably in high voltage environments, suitable for power management modules and high voltage power systems.
2. **Inverters and Power Converters:**
- In inverters and power converters, this MOSFET can handle high voltages and ensure stable switching performance. Although its on-resistance is relatively high, it can provide sufficient safety margin and reliability in situations where voltage requirements are extremely high.
3. **Power Protection Circuit:**
- In power protection circuits, FR420BTM-VB can be used as a high voltage protection switch to ensure reliable protection of the circuit in overload or short circuit conditions. Its high withstand voltage characteristics make it suitable for high voltage protection applications.
4. **High Voltage Load Switch:**
- This MOSFET is suitable for high voltage load switch applications, such as load control in the high voltage part of electrical equipment. It can handle high voltage loads to ensure stable operation and safety protection of equipment.
The high withstand voltage and stable switching performance of FR420BTM-VB make it important in high voltage power electronic applications, suitable for occasions that need to withstand high voltage and reliable switching control.
1. **High Voltage Power Switch:**
- FR420BTM-VB can be used for high voltage power switch applications, such as switching control of high voltage power supplies. Its 650V drain-source voltage enables it to work stably in high voltage environments, suitable for power management modules and high voltage power systems.
2. **Inverters and Power Converters:**
- In inverters and power converters, this MOSFET can handle high voltages and ensure stable switching performance. Although its on-resistance is relatively high, it can provide sufficient safety margin and reliability in situations where voltage requirements are extremely high.
3. **Power Protection Circuit:**
- In power protection circuits, FR420BTM-VB can be used as a high voltage protection switch to ensure reliable protection of the circuit in overload or short circuit conditions. Its high withstand voltage characteristics make it suitable for high voltage protection applications.
4. **High Voltage Load Switch:**
- This MOSFET is suitable for high voltage load switch applications, such as load control in the high voltage part of electrical equipment. It can handle high voltage loads to ensure stable operation and safety protection of equipment.
The high withstand voltage and stable switching performance of FR420BTM-VB make it important in high voltage power electronic applications, suitable for occasions that need to withstand high voltage and reliable switching control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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