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FR3714Z-VB Product details
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FR3714Z-VB MOSFET Product Introduction
FR3714Z-VB is a high-performance N-channel MOSFET designed for a variety of power switching applications. It uses a TO252 package, which is compact and suitable for surface mounting, and can meet high power and high current requirements. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for low to medium voltage applications. Its threshold voltage (Vth) is 1.7V, ensuring that it can be turned on at a lower gate-source voltage. FR3714Z-VB provides a lower on-resistance, RDS(ON) is 9mΩ when VGS is 4.5V, and RDS(ON) is 7mΩ when VGS is 10V, giving it the advantage of low power loss in high current applications. This MOSFET uses trench technology to provide excellent switching efficiency and good thermal management characteristics.
FR3714Z-VB is a high-performance N-channel MOSFET designed for a variety of power switching applications. It uses a TO252 package, which is compact and suitable for surface mounting, and can meet high power and high current requirements. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for low to medium voltage applications. Its threshold voltage (Vth) is 1.7V, ensuring that it can be turned on at a lower gate-source voltage. FR3714Z-VB provides a lower on-resistance, RDS(ON) is 9mΩ when VGS is 4.5V, and RDS(ON) is 7mΩ when VGS is 10V, giving it the advantage of low power loss in high current applications. This MOSFET uses trench technology to provide excellent switching efficiency and good thermal management characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
The TO252 package is a surface mount package with a compact shape and effective heat dissipation capabilities for high power applications.
- **Configuration**: Single N-channel
The FR3714Z-VB adopts a single N-channel configuration and is suitable for switching applications that require low RDS(ON).
- **Drain-source voltage (VDS)**: 30V
The maximum drain-source voltage is 30V, suitable for low to medium voltage circuits.
- **Gate-source voltage (VGS)**: ±20V
The gate-source voltage is rated at ±20V, providing reliable gate control for efficient switching operation.
- **Threshold voltage (Vth)**: 1.7V
When the gate-source voltage reaches 1.7V, the MOSFET begins to turn on, providing a lower switching threshold.
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
At 4.5V gate-source voltage, the on-resistance is 9mΩ, and at 10V gate-source voltage it is 7mΩ, ensuring low power loss and high-efficiency operation.
- **Continuous leakage current (ID)**: 70A
The device can support up to 70A of continuous leakage current, suitable for high current applications.
- **Technology**: Trench technology
FR3714Z-VB adopts trench technology, which improves the switching performance and thermal characteristics of the MOSFET, ensuring reliability in various applications.
- **Package**: TO252
The TO252 package is a surface mount package with a compact shape and effective heat dissipation capabilities for high power applications.
- **Configuration**: Single N-channel
The FR3714Z-VB adopts a single N-channel configuration and is suitable for switching applications that require low RDS(ON).
- **Drain-source voltage (VDS)**: 30V
The maximum drain-source voltage is 30V, suitable for low to medium voltage circuits.
- **Gate-source voltage (VGS)**: ±20V
The gate-source voltage is rated at ±20V, providing reliable gate control for efficient switching operation.
- **Threshold voltage (Vth)**: 1.7V
When the gate-source voltage reaches 1.7V, the MOSFET begins to turn on, providing a lower switching threshold.
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
At 4.5V gate-source voltage, the on-resistance is 9mΩ, and at 10V gate-source voltage it is 7mΩ, ensuring low power loss and high-efficiency operation.
- **Continuous leakage current (ID)**: 70A
The device can support up to 70A of continuous leakage current, suitable for high current applications.
- **Technology**: Trench technology
FR3714Z-VB adopts trench technology, which improves the switching performance and thermal characteristics of the MOSFET, ensuring reliability in various applications.
Domain and module applications：
Application Examples
1. **Power Management System**
FR3714Z-VB is suitable for power management systems such as DC-DC converters and power switches. Its low on-resistance and high current handling capability enable it to have extremely low power loss in power conversion and improve system efficiency.
2. **Motor Drive**
In motor drive circuits, FR3714Z-VB can be used as a high current switch to provide stable and efficient motor control, especially for industrial and automotive applications that require high current.
3. **LED Lighting**
Due to its low RDS(ON), FR3714Z-VB is very suitable for switch control in LED lighting systems, helping to improve the energy efficiency of lighting systems and extend the service life of LEDs.
4. **Battery Management System (BMS)**
The high current handling capability and low power consumption of FR3714Z-VB make it suitable for use in battery management systems for efficient battery charge and discharge control and protection.
These product profiles, detailed parameters and application examples demonstrate the superior performance and wide applicability of FR3714Z-VB MOSFET in various power applications.
1. **Power Management System**
FR3714Z-VB is suitable for power management systems such as DC-DC converters and power switches. Its low on-resistance and high current handling capability enable it to have extremely low power loss in power conversion and improve system efficiency.
2. **Motor Drive**
In motor drive circuits, FR3714Z-VB can be used as a high current switch to provide stable and efficient motor control, especially for industrial and automotive applications that require high current.
3. **LED Lighting**
Due to its low RDS(ON), FR3714Z-VB is very suitable for switch control in LED lighting systems, helping to improve the energy efficiency of lighting systems and extend the service life of LEDs.
4. **Battery Management System (BMS)**
The high current handling capability and low power consumption of FR3714Z-VB make it suitable for use in battery management systems for efficient battery charge and discharge control and protection.
These product profiles, detailed parameters and application examples demonstrate the superior performance and wide applicability of FR3714Z-VB MOSFET in various power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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