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FR3711Z-VB Product details
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FR3711Z-VB MOSFET Overview
The FR3711Z-VB is a high performance single N-channel MOSFET in a TO252 package. It utilizes advanced Trench technology to provide extremely low on-resistance (RDS(ON)) and high current handling capability. Its drain-source voltage (VDS) is 20V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) ranges from 0.5V to 1.5V. The FR3711Z-VB is designed for applications requiring extremely high efficiency and low power consumption, and is suitable for use in high load and high-efficiency circuits.
The FR3711Z-VB is a high performance single N-channel MOSFET in a TO252 package. It utilizes advanced Trench technology to provide extremely low on-resistance (RDS(ON)) and high current handling capability. Its drain-source voltage (VDS) is 20V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) ranges from 0.5V to 1.5V. The FR3711Z-VB is designed for applications requiring extremely high efficiency and low power consumption, and is suitable for use in high load and high-efficiency circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 20V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 0.5V ~ 1.5V
- **On-resistance (RDS(ON)):**
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Continuous drain current (ID):** 120A
- **Technology:** Trench
This MOSFET is ideal for high-performance power switching applications with its extremely low on-resistance and high current capability. It maintains high efficiency under high current conditions, reducing power consumption and heat generation.
- **Package:** TO252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 20V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 0.5V ~ 1.5V
- **On-resistance (RDS(ON)):**
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Continuous drain current (ID):** 120A
- **Technology:** Trench
This MOSFET is ideal for high-performance power switching applications with its extremely low on-resistance and high current capability. It maintains high efficiency under high current conditions, reducing power consumption and heat generation.
Domain and module applications：
Application Examples and Related Fields
1. **High-efficiency Power Management:**
- FR3711Z-VB can be used in high-efficiency power management modules such as DC-DC converters. In these applications, its ultra-low on-resistance (2.5mΩ) helps reduce power loss, improve conversion efficiency, and make the power system more efficient and stable.
2. **Motor Drive and Electric Vehicles:**
- Due to its current handling capability of up to 120A, this MOSFET is suitable for current control in motor drive systems and electric vehicles (EVs). Under high load conditions, it can stably handle large currents, providing reliable motor control and drive.
3. **Load Switch and Protection Circuits:**
- In load switch applications, FR3711Z-VB can be used to control power switches such as battery management systems (BMS) and power protection circuits. Its low on-resistance and high current capability ensure efficient current switching and effective power protection.
4. **High-Performance Computing and Communications Equipment:**
- This MOSFET is also suitable for power management and load switching applications in high-performance computing and communications equipment. Its low on-resistance and high current capability can meet the requirements of these devices for high efficiency and low heat generation, improving the overall performance and reliability of the equipment.
The excellent performance and high current capability of the FR3711Z-VB make it excel in a variety of demanding power electronics applications and is an ideal choice for efficient power management and control.
1. **High-efficiency Power Management:**
- FR3711Z-VB can be used in high-efficiency power management modules such as DC-DC converters. In these applications, its ultra-low on-resistance (2.5mΩ) helps reduce power loss, improve conversion efficiency, and make the power system more efficient and stable.
2. **Motor Drive and Electric Vehicles:**
- Due to its current handling capability of up to 120A, this MOSFET is suitable for current control in motor drive systems and electric vehicles (EVs). Under high load conditions, it can stably handle large currents, providing reliable motor control and drive.
3. **Load Switch and Protection Circuits:**
- In load switch applications, FR3711Z-VB can be used to control power switches such as battery management systems (BMS) and power protection circuits. Its low on-resistance and high current capability ensure efficient current switching and effective power protection.
4. **High-Performance Computing and Communications Equipment:**
- This MOSFET is also suitable for power management and load switching applications in high-performance computing and communications equipment. Its low on-resistance and high current capability can meet the requirements of these devices for high efficiency and low heat generation, improving the overall performance and reliability of the equipment.
The excellent performance and high current capability of the FR3711Z-VB make it excel in a variety of demanding power electronics applications and is an ideal choice for efficient power management and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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