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FR3707Z-VB Product details
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FR3707Z-VB MOSFET Product Introduction
FR3707Z-VB is a high-performance N-channel MOSFET suitable for a variety of power applications. It adopts TO252 package, compact design, suitable for surface mounting. The maximum drain-source voltage (VDS) of this MOSFET is 30V, suitable for low to medium voltage switching applications. Its threshold voltage (Vth) is 1.7V, ensuring that it can be turned on at a lower gate-source voltage. FR3707Z-VB has excellent conduction performance, RDS(ON) is 6mΩ when VGS is 4.5V, and RDS(ON) is 5mΩ when VGS is 10V, and can handle up to 80A of continuous leakage current with extremely low power loss. This MOSFET adopts trench technology, providing efficient switching performance and superior thermal management.
FR3707Z-VB is a high-performance N-channel MOSFET suitable for a variety of power applications. It adopts TO252 package, compact design, suitable for surface mounting. The maximum drain-source voltage (VDS) of this MOSFET is 30V, suitable for low to medium voltage switching applications. Its threshold voltage (Vth) is 1.7V, ensuring that it can be turned on at a lower gate-source voltage. FR3707Z-VB has excellent conduction performance, RDS(ON) is 6mΩ when VGS is 4.5V, and RDS(ON) is 5mΩ when VGS is 10V, and can handle up to 80A of continuous leakage current with extremely low power loss. This MOSFET adopts trench technology, providing efficient switching performance and superior thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
The TO252 package is a surface mount package with a compact shape and good heat dissipation performance, suitable for high power applications.
- **Configuration**: Single N-channel
The FR3707Z-VB adopts a single N-channel configuration, suitable for switching applications requiring low RDS(ON).
- **Drain-source voltage (VDS)**: 30V
The maximum drain-source voltage is 30V, suitable for low to medium voltage circuits.
- **Gate-source voltage (VGS)**: ±20V
The gate-source voltage is rated at ±20V, providing reliable gate control for efficient switching operation.
- **Threshold voltage (Vth)**: 1.7V
When the gate-source voltage reaches 1.7V, the MOSFET begins to turn on, providing a lower switching threshold.
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
At 4.5V gate-source voltage, the on-resistance is 6mΩ, and at 10V gate-source voltage it is 5mΩ, ensuring low power loss and efficient operation.
- **Continuous leakage current (ID)**: 80A
The device can support up to 80A of continuous leakage current, suitable for high current applications.
- **Technology**: Trench technology
FR3707Z-VB adopts trench technology, which improves the switching efficiency and thermal characteristics of the MOSFET, ensuring reliability in various applications.
- **Package**: TO252
The TO252 package is a surface mount package with a compact shape and good heat dissipation performance, suitable for high power applications.
- **Configuration**: Single N-channel
The FR3707Z-VB adopts a single N-channel configuration, suitable for switching applications requiring low RDS(ON).
- **Drain-source voltage (VDS)**: 30V
The maximum drain-source voltage is 30V, suitable for low to medium voltage circuits.
- **Gate-source voltage (VGS)**: ±20V
The gate-source voltage is rated at ±20V, providing reliable gate control for efficient switching operation.
- **Threshold voltage (Vth)**: 1.7V
When the gate-source voltage reaches 1.7V, the MOSFET begins to turn on, providing a lower switching threshold.
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
At 4.5V gate-source voltage, the on-resistance is 6mΩ, and at 10V gate-source voltage it is 5mΩ, ensuring low power loss and efficient operation.
- **Continuous leakage current (ID)**: 80A
The device can support up to 80A of continuous leakage current, suitable for high current applications.
- **Technology**: Trench technology
FR3707Z-VB adopts trench technology, which improves the switching efficiency and thermal characteristics of the MOSFET, ensuring reliability in various applications.
Domain and module applications：
Application Examples
1. **Power Conversion Module**
FR3707Z-VB is suitable for power conversion modules such as DC-DC converters. Its low on-resistance and high current handling capability make it very suitable for efficient power conversion and rectification applications.
2. **Motor Drive Circuit**
In motor drive circuits, especially where high current and low power loss are required, FR3707Z-VB can be used to drive the motor and provide smooth and reliable motor control.
3. **LED Lighting System**
Due to its low on-resistance, FR3707Z-VB is very suitable for switch control in LED lighting systems, helping to improve energy efficiency and extend LED life.
4. **Battery Management System (BMS)**
FR3707Z-VB's high current handling capability and low RDS(ON) characteristics make it suitable for battery management systems to ensure efficient battery charge and discharge management and protection functions.
These product profiles, detailed parameters and application examples demonstrate the superior performance and wide applicability of the FR3707Z-VB MOSFET in a variety of power applications.
1. **Power Conversion Module**
FR3707Z-VB is suitable for power conversion modules such as DC-DC converters. Its low on-resistance and high current handling capability make it very suitable for efficient power conversion and rectification applications.
2. **Motor Drive Circuit**
In motor drive circuits, especially where high current and low power loss are required, FR3707Z-VB can be used to drive the motor and provide smooth and reliable motor control.
3. **LED Lighting System**
Due to its low on-resistance, FR3707Z-VB is very suitable for switch control in LED lighting systems, helping to improve energy efficiency and extend LED life.
4. **Battery Management System (BMS)**
FR3707Z-VB's high current handling capability and low RDS(ON) characteristics make it suitable for battery management systems to ensure efficient battery charge and discharge management and protection functions.
These product profiles, detailed parameters and application examples demonstrate the superior performance and wide applicability of the FR3707Z-VB MOSFET in a variety of power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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