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FR3706C-VB Product details
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FR3706C-VB MOSFET Product Introduction
**Product Overview: **
FR3706C-VB is a high-performance N-Channel MOSFET designed for high-efficiency switching applications. It uses a compact TO252 package for space-constrained designs. With a maximum drain-source voltage (VDS) of 20V and a current rating of up to 100A, this MOSFET is ideal for low-voltage, high-current applications. The Trench technology used in the FR3706C-VB ensures low on-resistance and fast switching capabilities, improving its efficiency in a variety of electronic circuits.
**Main Features:**
- **Package:** TO252
- **Configuration:** Single N-Channel
- **VDS:** 20V
- **VGS:** ±20V
- **Vth (Threshold Voltage):** 0.5V to 1.5V
- **RDS(ON):** 6mΩ at 2.5V; 4.5mΩ at 4.5V
- **ID (Continuous Drain Current):** 100A
- **Technology:** Trench
**Product Overview: **
FR3706C-VB is a high-performance N-Channel MOSFET designed for high-efficiency switching applications. It uses a compact TO252 package for space-constrained designs. With a maximum drain-source voltage (VDS) of 20V and a current rating of up to 100A, this MOSFET is ideal for low-voltage, high-current applications. The Trench technology used in the FR3706C-VB ensures low on-resistance and fast switching capabilities, improving its efficiency in a variety of electronic circuits.
**Main Features:**
- **Package:** TO252
- **Configuration:** Single N-Channel
- **VDS:** 20V
- **VGS:** ±20V
- **Vth (Threshold Voltage):** 0.5V to 1.5V
- **RDS(ON):** 6mΩ at 2.5V; 4.5mΩ at 4.5V
- **ID (Continuous Drain Current):** 100A
- **Technology:** Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** A small surface mount package that provides a balance between size and thermal performance.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel MOSFET configuration suitable for switching applications.
3. **VDS (Drain-Source Voltage):** 20V
- **Description:** The maximum voltage that can be applied between the drain and source without damaging the MOSFET.
4. **VGS (Gate-Source Voltage):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source.
5. **Vth (Threshold Voltage):** 0.5V to 1.5V
- **Description:** The voltage required to turn on the MOSFET. Below this voltage, the MOSFET remains off.
6. **RDS(ON)（On-resistance）:**
- **6mΩ at 2.5V:** The resistance between the drain and source when the MOSFET is on, with a gate-source voltage of 2.5V.
- **4.5mΩ at 4.5V:** The resistance between the drain and source when the MOSFET is on, with a gate-source voltage of 4.5V.
7. **ID（Continuous Drain Current）:** 100A
- **Description:** The maximum continuous current that can flow through the drain when the MOSFET is fully on.
8. **Technology:** Trench
- **Description:** A technology that reduces the on-resistance of the MOSFET and increases the switching speed by using a trench structure in the gate area.
1. **Package:** TO252
- **Description:** A small surface mount package that provides a balance between size and thermal performance.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel MOSFET configuration suitable for switching applications.
3. **VDS (Drain-Source Voltage):** 20V
- **Description:** The maximum voltage that can be applied between the drain and source without damaging the MOSFET.
4. **VGS (Gate-Source Voltage):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source.
5. **Vth (Threshold Voltage):** 0.5V to 1.5V
- **Description:** The voltage required to turn on the MOSFET. Below this voltage, the MOSFET remains off.
6. **RDS(ON)（On-resistance）:**
- **6mΩ at 2.5V:** The resistance between the drain and source when the MOSFET is on, with a gate-source voltage of 2.5V.
- **4.5mΩ at 4.5V:** The resistance between the drain and source when the MOSFET is on, with a gate-source voltage of 4.5V.
7. **ID（Continuous Drain Current）:** 100A
- **Description:** The maximum continuous current that can flow through the drain when the MOSFET is fully on.
8. **Technology:** Trench
- **Description:** A technology that reduces the on-resistance of the MOSFET and increases the switching speed by using a trench structure in the gate area.
Domain and module applications：
Applications and Examples
**1. Power Management Circuits: **
- **Example:** In a power supply unit (PSU), the FR3706C-VB can be used as a high-side or low-side switch to efficiently manage power delivery. Its low RDS(ON) helps reduce power loss and heat generation, making it suitable for applications that require efficient power conversion.
**2. DC-DC Converters: **
- **Example:** This MOSFET is suitable for DC-DC converter circuits as a high-efficiency switch. Its high current handling capability and low on-resistance are essential to maintain high efficiency and reduce energy losses.
**3. Motor Drive Circuits: **
- **Example:** In a motor drive circuit, the FR3706C-VB can be used to switch motor current. Its high current handling capability and low on-resistance make it suitable for DC motor drives in automotive or industrial applications.
**4. Battery Management System (BMS): **
- **Example:** This MOSFET can be used in a BMS to control the charging and discharging of the battery. Its low RDS(ON) ensures minimal voltage drop and power dissipation, which is critical to maintaining battery efficiency and life.
**5. Load Switch: **
- **Example:** In various electronic devices, the FR3706C-VB can be used as a load switch to control the flow of current to different parts of the circuit. Its high current rating and fast switching capability make it suitable for power distribution management in compact, high-current applications.
The FR3706C-VB MOSFET provides excellent performance for a wide range of applications, ensuring reliable and efficient operation in harsh environments.
**1. Power Management Circuits: **
- **Example:** In a power supply unit (PSU), the FR3706C-VB can be used as a high-side or low-side switch to efficiently manage power delivery. Its low RDS(ON) helps reduce power loss and heat generation, making it suitable for applications that require efficient power conversion.
**2. DC-DC Converters: **
- **Example:** This MOSFET is suitable for DC-DC converter circuits as a high-efficiency switch. Its high current handling capability and low on-resistance are essential to maintain high efficiency and reduce energy losses.
**3. Motor Drive Circuits: **
- **Example:** In a motor drive circuit, the FR3706C-VB can be used to switch motor current. Its high current handling capability and low on-resistance make it suitable for DC motor drives in automotive or industrial applications.
**4. Battery Management System (BMS): **
- **Example:** This MOSFET can be used in a BMS to control the charging and discharging of the battery. Its low RDS(ON) ensures minimal voltage drop and power dissipation, which is critical to maintaining battery efficiency and life.
**5. Load Switch: **
- **Example:** In various electronic devices, the FR3706C-VB can be used as a load switch to control the flow of current to different parts of the circuit. Its high current rating and fast switching capability make it suitable for power distribution management in compact, high-current applications.
The FR3706C-VB MOSFET provides excellent performance for a wide range of applications, ensuring reliable and efficient operation in harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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