中文
English
FR3607-VB Product details
Back to previous pageProduct introduction：
FR3607-VB MOSFET Product Introduction
The FR3607-VB is a high-performance N-channel MOSFET designed for a variety of power applications. It uses a TO252 package with a compact size suitable for surface mount design. The device has a maximum drain-source voltage (VDS) of 80V, which is very suitable for medium voltage switching applications. Its threshold voltage (Vth) is 3V, ensuring reliable switching characteristics. The low on-resistance (RDS(ON)) of 5mΩ (at VGS of 10V) enables efficient operation with minimal power loss. The FR3607-VB can handle continuous drain currents of up to 75A and is suitable for high current applications. This MOSFET uses trench technology to provide superior switching efficiency and thermal management performance.
The FR3607-VB is a high-performance N-channel MOSFET designed for a variety of power applications. It uses a TO252 package with a compact size suitable for surface mount design. The device has a maximum drain-source voltage (VDS) of 80V, which is very suitable for medium voltage switching applications. Its threshold voltage (Vth) is 3V, ensuring reliable switching characteristics. The low on-resistance (RDS(ON)) of 5mΩ (at VGS of 10V) enables efficient operation with minimal power loss. The FR3607-VB can handle continuous drain currents of up to 75A and is suitable for high current applications. This MOSFET uses trench technology to provide superior switching efficiency and thermal management performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
The TO252 package is a surface mount package with a compact shape and efficient heat dissipation for high power applications.
- **Configuration**: Single N-channel
The FR3607-VB adopts a single N-channel configuration and is commonly used in switching applications that require low RDS(ON).
- **Drain-source voltage (VDS)**: 80V
The maximum drain-source voltage is 80V, suitable for medium voltage circuits.
- **Gate-source voltage (VGS)**: ±20V
The gate-source voltage is rated at ±20V, providing robust gate control for efficient switching operation.
- **Threshold voltage (Vth)**: 3V
When the gate-source voltage reaches 3V, the MOSFET begins to turn on, providing a reliable switching threshold.
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
The low on-resistance of 5mΩ ensures that the MOSFET can handle high currents with minimal power loss, improving overall efficiency.
- **Continuous leakage current (ID)**: 75A
The device can support up to 75A of continuous leakage current, suitable for high current applications.
- **Technology**: Trench technology
The trench technology used in FR3607-VB improves the switching performance and thermal characteristics of the MOSFET, ensuring reliability in demanding applications.
- **Package**: TO252
The TO252 package is a surface mount package with a compact shape and efficient heat dissipation for high power applications.
- **Configuration**: Single N-channel
The FR3607-VB adopts a single N-channel configuration and is commonly used in switching applications that require low RDS(ON).
- **Drain-source voltage (VDS)**: 80V
The maximum drain-source voltage is 80V, suitable for medium voltage circuits.
- **Gate-source voltage (VGS)**: ±20V
The gate-source voltage is rated at ±20V, providing robust gate control for efficient switching operation.
- **Threshold voltage (Vth)**: 3V
When the gate-source voltage reaches 3V, the MOSFET begins to turn on, providing a reliable switching threshold.
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
The low on-resistance of 5mΩ ensures that the MOSFET can handle high currents with minimal power loss, improving overall efficiency.
- **Continuous leakage current (ID)**: 75A
The device can support up to 75A of continuous leakage current, suitable for high current applications.
- **Technology**: Trench technology
The trench technology used in FR3607-VB improves the switching performance and thermal characteristics of the MOSFET, ensuring reliability in demanding applications.
Domain and module applications：
Application Examples
1. **Power Modules**
FR3607-VB is ideal for use in power modules where efficient power conversion is critical. Its low RDS(ON) and high current handling capability make it ideal for use in DC-DC converters and synchronous rectifiers.
2. **Motor Control Circuits**
In motor control applications, especially in automotive systems, FR3607-VB can be used to drive motors, ensuring smooth and reliable operation due to its high current handling capability and efficient switching characteristics.
3. **Battery Management System (BMS)**
The MOSFET's strong voltage and current ratings, combined with trench technology, make it ideal for use in battery management systems such as electric vehicles and portable electronic devices, where precise power control and efficiency are critical.
4. **Inverter Circuits**
FR3607-VB can be used in inverter circuits such as solar inverters, where efficient energy conversion is achieved by reducing switching losses.
These comprehensive product briefs, detailed parametric descriptions and application examples demonstrate the versatility and capabilities of the FR3607-VB MOSFET in a wide range of high-performance and power-sensitive applications.
1. **Power Modules**
FR3607-VB is ideal for use in power modules where efficient power conversion is critical. Its low RDS(ON) and high current handling capability make it ideal for use in DC-DC converters and synchronous rectifiers.
2. **Motor Control Circuits**
In motor control applications, especially in automotive systems, FR3607-VB can be used to drive motors, ensuring smooth and reliable operation due to its high current handling capability and efficient switching characteristics.
3. **Battery Management System (BMS)**
The MOSFET's strong voltage and current ratings, combined with trench technology, make it ideal for use in battery management systems such as electric vehicles and portable electronic devices, where precise power control and efficiency are critical.
4. **Inverter Circuits**
FR3607-VB can be used in inverter circuits such as solar inverters, where efficient energy conversion is achieved by reducing switching losses.
These comprehensive product briefs, detailed parametric descriptions and application examples demonstrate the versatility and capabilities of the FR3607-VB MOSFET in a wide range of high-performance and power-sensitive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
