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FR3412-VB Product details
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Product Introduction
FR3412-VB is a high-performance N-Channel MOSFET in TO252 package and manufactured based on Trench technology. This MOSFET is designed to handle drain-source voltage (VDS) up to 100V, which is ideal for applications requiring high switching speed and low on-resistance. Its gate-source voltage (VGS) is ±20V and gate threshold voltage (Vth) is 1.8V, which can provide efficient conduction at lower gate voltages. The on-resistance (RDS(ON)) of FR3412-VB is 18mΩ @ VGS=10V and the rated drain current (ID) is 45A, which is suitable for a variety of high current and low resistance applications.
FR3412-VB is a high-performance N-Channel MOSFET in TO252 package and manufactured based on Trench technology. This MOSFET is designed to handle drain-source voltage (VDS) up to 100V, which is ideal for applications requiring high switching speed and low on-resistance. Its gate-source voltage (VGS) is ±20V and gate threshold voltage (Vth) is 1.8V, which can provide efficient conduction at lower gate voltages. The on-resistance (RDS(ON)) of FR3412-VB is 18mΩ @ VGS=10V and the rated drain current (ID) is 45A, which is suitable for a variety of high current and low resistance applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Rated current (ID)**: 45A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Rated current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Switching Power Supplies**: The low on-resistance and high current rating of the FR3412-VB make it an ideal choice for use in switching power supplies. In these applications, the MOSFET provides efficient switching operation, reduces power losses and improves overall system efficiency.
2. **Motor Drive**: In motor drive applications, the FR3412-VB is able to handle high current demands and provide stable switching control. It is suitable for use in motor control circuits to improve the operating efficiency and response speed of the motor.
3. **DC-DC Converters**: The high current handling capability and low on-resistance of this MOSFET make it suitable for use as a switching element in DC-DC converters. It is able to keep energy losses low during the conversion process, optimizing system performance.
4. **Power Amplifier**: In power amplifier applications, the high current and low on-resistance characteristics of the FR3412-VB help improve the amplifier's efficiency and output power. It is able to handle large current signals and provide stable switching control.
5. **Battery Management System**: FR3412-VB is suitable for battery management systems, especially applications that require high current and low resistance. It can be used for battery charge and discharge control, as well as to protect the battery from overcurrent and overheating.
FR3412-VB's low on-resistance and high current handling capability make it excellent in efficient switching and current control, suitable for a variety of application scenarios that require high-performance MOSFETs.
1. **Switching Power Supplies**: The low on-resistance and high current rating of the FR3412-VB make it an ideal choice for use in switching power supplies. In these applications, the MOSFET provides efficient switching operation, reduces power losses and improves overall system efficiency.
2. **Motor Drive**: In motor drive applications, the FR3412-VB is able to handle high current demands and provide stable switching control. It is suitable for use in motor control circuits to improve the operating efficiency and response speed of the motor.
3. **DC-DC Converters**: The high current handling capability and low on-resistance of this MOSFET make it suitable for use as a switching element in DC-DC converters. It is able to keep energy losses low during the conversion process, optimizing system performance.
4. **Power Amplifier**: In power amplifier applications, the high current and low on-resistance characteristics of the FR3412-VB help improve the amplifier's efficiency and output power. It is able to handle large current signals and provide stable switching control.
5. **Battery Management System**: FR3412-VB is suitable for battery management systems, especially applications that require high current and low resistance. It can be used for battery charge and discharge control, as well as to protect the battery from overcurrent and overheating.
FR3412-VB's low on-resistance and high current handling capability make it excellent in efficient switching and current control, suitable for a variety of application scenarios that require high-performance MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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