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FR320B-VB Product details
Back to previous pageProduct introduction：
1. FR320B-VB Product Introduction
FR320B-VB is a high-performance N-type power MOSFET in TO252 package. The MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. FR320B-VB uses SJ_Multi-EPI technology, has an on-resistance (RDS(ON)) of 1000mΩ, and a maximum drain current (ID) of 5A. It is designed to provide efficient switching performance and stable current handling capabilities, and is suitable for applications requiring high voltage and medium current.
FR320B-VB is a high-performance N-type power MOSFET in TO252 package. The MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. FR320B-VB uses SJ_Multi-EPI technology, has an on-resistance (RDS(ON)) of 1000mΩ, and a maximum drain current (ID) of 5A. It is designed to provide efficient switching performance and stable current handling capabilities, and is suitable for applications requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. FR320B-VB Detailed Parameters
1. **Package Type**: TO252
- TO252 package provides excellent heat dissipation and miniaturization, suitable for various space-constrained electronic devices.
2. **Configuration**: Single-channel N-type MOSFET
- Single-channel configuration suitable for medium and low voltage switching and control applications.
3. **Drain-Source Voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, making it suitable for high voltage applications and capable of handling switching tasks under high voltage conditions.
4. **Gate-Source Voltage (VGS)**: ±30V
- The wide range of gate drive voltage provides greater flexibility and more stable control.
5. **Threshold voltage (Vth)**: 3.5V
- The higher threshold voltage allows the MOSFET to conduct at a higher gate drive voltage, which is suitable for applications that require a higher gate voltage.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- The higher on-resistance can maintain lower conduction losses in high voltage applications, which is suitable for medium current applications.
7. **Drain current (ID)**: 5A
- The maximum drain current is 5A, which is suitable for applications with medium current loads.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology enhances the conduction characteristics and switching performance of the MOSFET, providing efficient current handling capabilities.
1. **Package Type**: TO252
- TO252 package provides excellent heat dissipation and miniaturization, suitable for various space-constrained electronic devices.
2. **Configuration**: Single-channel N-type MOSFET
- Single-channel configuration suitable for medium and low voltage switching and control applications.
3. **Drain-Source Voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, making it suitable for high voltage applications and capable of handling switching tasks under high voltage conditions.
4. **Gate-Source Voltage (VGS)**: ±30V
- The wide range of gate drive voltage provides greater flexibility and more stable control.
5. **Threshold voltage (Vth)**: 3.5V
- The higher threshold voltage allows the MOSFET to conduct at a higher gate drive voltage, which is suitable for applications that require a higher gate voltage.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- The higher on-resistance can maintain lower conduction losses in high voltage applications, which is suitable for medium current applications.
7. **Drain current (ID)**: 5A
- The maximum drain current is 5A, which is suitable for applications with medium current loads.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology enhances the conduction characteristics and switching performance of the MOSFET, providing efficient current handling capabilities.
Domain and module applications：
III. FR320B-VB Application Fields and Modules
1. **High Voltage Power Switch**:
- The high drain-source voltage of FR320B-VB makes it very suitable for use in high voltage power switches. For example, in high voltage DC-DC converters or power modules, this MOSFET can effectively handle high voltage switching tasks, improving the overall efficiency and stability of the system.
2. **Power Electronic Devices**:
- Due to its high voltage handling capability, FR320B-VB is suitable for use in a variety of power electronic devices such as inverters and motor drive systems. In these applications, this MOSFET can be used as the main switching device to control power transmission in an efficient manner.
3. **High Voltage Motor Control**:
- In high voltage motor control systems, FR320B-VB is able to handle switching operations under high voltage conditions to ensure reliable starting and operation of the motor. Its stable current handling capability makes it perform well in high voltage motor control systems.
4. **Power Protection Circuit**:
- This MOSFET can also be used in power protection circuits, such as overvoltage protection and overcurrent protection modules. Due to its high voltage and medium current handling capabilities, the FR320B-VB is able to effectively protect power devices from overvoltage and overcurrent.
5. **High Voltage Power Adapter**:
- In high voltage power adapters, the high voltage and medium current capabilities of the FR320B-VB make it an ideal choice. It is able to handle the high voltage switching tasks in the adapter, ensuring stable operation and high efficiency of the power adapter.
With its high voltage handling capability and stable current performance, the FR320B-VB provides a reliable solution in applications such as high voltage switching, power electronics, motor control, and power protection.
1. **High Voltage Power Switch**:
- The high drain-source voltage of FR320B-VB makes it very suitable for use in high voltage power switches. For example, in high voltage DC-DC converters or power modules, this MOSFET can effectively handle high voltage switching tasks, improving the overall efficiency and stability of the system.
2. **Power Electronic Devices**:
- Due to its high voltage handling capability, FR320B-VB is suitable for use in a variety of power electronic devices such as inverters and motor drive systems. In these applications, this MOSFET can be used as the main switching device to control power transmission in an efficient manner.
3. **High Voltage Motor Control**:
- In high voltage motor control systems, FR320B-VB is able to handle switching operations under high voltage conditions to ensure reliable starting and operation of the motor. Its stable current handling capability makes it perform well in high voltage motor control systems.
4. **Power Protection Circuit**:
- This MOSFET can also be used in power protection circuits, such as overvoltage protection and overcurrent protection modules. Due to its high voltage and medium current handling capabilities, the FR320B-VB is able to effectively protect power devices from overvoltage and overcurrent.
5. **High Voltage Power Adapter**:
- In high voltage power adapters, the high voltage and medium current capabilities of the FR320B-VB make it an ideal choice. It is able to handle the high voltage switching tasks in the adapter, ensuring stable operation and high efficiency of the power adapter.
With its high voltage handling capability and stable current performance, the FR320B-VB provides a reliable solution in applications such as high voltage switching, power electronics, motor control, and power protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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