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FR224BTM-VB Product details
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1. FR224BTM-VB Product Introduction
FR224BTM-VB is a high-performance N-type power MOSFET in TO252 package, designed for medium voltage applications. Its maximum drain-source voltage (VDS) is 250V, and the gate-source voltage (VGS) supports ±20V. The threshold voltage (Vth) of this MOSFET is 3V, the on-resistance (RDS(ON)) is 640mΩ (at VGS=10V), and the drain current (ID) is up to 4.5A. FR224BTM-VB uses Trench technology to provide excellent switching performance and low conduction losses, making it very suitable for applications requiring high voltage and high-efficiency switching.
FR224BTM-VB is a high-performance N-type power MOSFET in TO252 package, designed for medium voltage applications. Its maximum drain-source voltage (VDS) is 250V, and the gate-source voltage (VGS) supports ±20V. The threshold voltage (Vth) of this MOSFET is 3V, the on-resistance (RDS(ON)) is 640mΩ (at VGS=10V), and the drain current (ID) is up to 4.5A. FR224BTM-VB uses Trench technology to provide excellent switching performance and low conduction losses, making it very suitable for applications requiring high voltage and high-efficiency switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. FR224BTM-VB Detailed Parameters
1. **Package Type**: TO252
- TO252 package is suitable for medium power applications, has good heat dissipation performance and small size, and is easy to integrate into various circuit designs.
2. **Configuration**: Single-channel N-type MOSFET
- The single-channel configuration makes it suitable for various switching and control applications, providing flexible design options.
3. **Drain-Source Voltage (VDS)**: 250V
- The maximum drain-source voltage is 250V, which is suitable for medium voltage applications and can work stably in a higher voltage environment.
4. **Gate-Source Voltage (VGS)**: ±20V
- Supports a wider gate drive voltage range, enhancing the flexibility and safety of switch control.
5. **Threshold Voltage (Vth)**: 3V
- The 3V threshold voltage ensures stability under normal operating conditions and reduces the possibility of false triggering.
6. **On-resistance (RDS(ON))**:
- **640mΩ @ VGS = 10V**
- Lower on-resistance helps reduce power loss and improve overall switching efficiency.
7. **Drain Current (ID)**: 4.5A
- Supports up to 4.5A of drain current, suitable for applications handling medium current.
8. **Technology**: Trench
- The use of Trench technology achieves low on-resistance and fast switching speed, optimizing device performance and efficiency.
1. **Package Type**: TO252
- TO252 package is suitable for medium power applications, has good heat dissipation performance and small size, and is easy to integrate into various circuit designs.
2. **Configuration**: Single-channel N-type MOSFET
- The single-channel configuration makes it suitable for various switching and control applications, providing flexible design options.
3. **Drain-Source Voltage (VDS)**: 250V
- The maximum drain-source voltage is 250V, which is suitable for medium voltage applications and can work stably in a higher voltage environment.
4. **Gate-Source Voltage (VGS)**: ±20V
- Supports a wider gate drive voltage range, enhancing the flexibility and safety of switch control.
5. **Threshold Voltage (Vth)**: 3V
- The 3V threshold voltage ensures stability under normal operating conditions and reduces the possibility of false triggering.
6. **On-resistance (RDS(ON))**:
- **640mΩ @ VGS = 10V**
- Lower on-resistance helps reduce power loss and improve overall switching efficiency.
7. **Drain Current (ID)**: 4.5A
- Supports up to 4.5A of drain current, suitable for applications handling medium current.
8. **Technology**: Trench
- The use of Trench technology achieves low on-resistance and fast switching speed, optimizing device performance and efficiency.
Domain and module applications：
III. FR224BTM-VB Application Fields and Modules
1. **Power Management**:
- FR224BTM-VB excels in power management applications, especially in DC-DC converters and regulators. Its high voltage and low on-resistance enable it to efficiently transfer power, reduce power consumption, and improve system efficiency.
2. **Switching Power Supply (SMPS)**:
- This MOSFET is suitable for switching operations in switching power supplies, especially in power modules at medium voltages. The excellent switching performance and high current handling capability of FR224BTM-VB improve conversion efficiency and help reduce energy losses.
3. **Motor Drive**:
- In motor drive circuits, FR224BTM-VB can be used for efficient motor control. Its high current carrying capability and low on-resistance ensure stable motor operation and can meet the switching needs of medium power motors.
4. **LED drive circuit**:
- FR224BTM-VB is suitable for current control in LED drive circuits. Its high voltage and low on-resistance characteristics help provide a stable drive current, thereby optimizing the efficiency and performance of LED lighting systems.
5. **Overcurrent protection**:
- This MOSFET can also be used in overcurrent protection circuits. Its ability to handle higher currents and good switching performance helps protect circuits from overcurrent damage and ensure the safe operation of equipment and systems.
With its high voltage handling capability, low on-resistance and excellent switching performance, FR224BTM-VB is widely used in power management, motor drive, LED drive and overcurrent protection, providing reliable solutions for various medium voltage applications.
1. **Power Management**:
- FR224BTM-VB excels in power management applications, especially in DC-DC converters and regulators. Its high voltage and low on-resistance enable it to efficiently transfer power, reduce power consumption, and improve system efficiency.
2. **Switching Power Supply (SMPS)**:
- This MOSFET is suitable for switching operations in switching power supplies, especially in power modules at medium voltages. The excellent switching performance and high current handling capability of FR224BTM-VB improve conversion efficiency and help reduce energy losses.
3. **Motor Drive**:
- In motor drive circuits, FR224BTM-VB can be used for efficient motor control. Its high current carrying capability and low on-resistance ensure stable motor operation and can meet the switching needs of medium power motors.
4. **LED drive circuit**:
- FR224BTM-VB is suitable for current control in LED drive circuits. Its high voltage and low on-resistance characteristics help provide a stable drive current, thereby optimizing the efficiency and performance of LED lighting systems.
5. **Overcurrent protection**:
- This MOSFET can also be used in overcurrent protection circuits. Its ability to handle higher currents and good switching performance helps protect circuits from overcurrent damage and ensure the safe operation of equipment and systems.
With its high voltage handling capability, low on-resistance and excellent switching performance, FR224BTM-VB is widely used in power management, motor drive, LED drive and overcurrent protection, providing reliable solutions for various medium voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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