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FR200N-VB Product details
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1. FR200N-VB Product Introduction
FR200N-VB is a high-performance N-type power MOSFET in TO252 package, designed for medium voltage applications. Its drain-source voltage (VDS) can reach up to 200V, and the gate-source voltage (VGS) supports ±20V. The device has a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 850mΩ (at VGS=10V), and can support a drain current (ID) of up to 5A. Using Trench technology, FR200N-VB provides excellent switching performance and low power consumption, making it ideal for a variety of applications requiring efficient power transmission and switching operations.
FR200N-VB is a high-performance N-type power MOSFET in TO252 package, designed for medium voltage applications. Its drain-source voltage (VDS) can reach up to 200V, and the gate-source voltage (VGS) supports ±20V. The device has a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 850mΩ (at VGS=10V), and can support a drain current (ID) of up to 5A. Using Trench technology, FR200N-VB provides excellent switching performance and low power consumption, making it ideal for a variety of applications requiring efficient power transmission and switching operations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. FR200N-VB Detailed Parameters
1. **Package Type**: TO252
- TO252 package provides good heat dissipation, suitable for medium power applications, and has a small size to save space.
2. **Configuration**: Single-channel N-type MOSFET
- Single-channel configuration makes it suitable for a variety of switching and control applications, with flexible design.
3. **Drain-Source Voltage (VDS)**: 200V
- The maximum drain-source voltage of 200V makes it suitable for medium voltage application scenarios.
4. **Gate-Source Voltage (VGS)**: ±20V
- Supports a wide range of gate drive voltages, enhancing the flexibility and safety of switch control.
5. **Threshold Voltage (Vth)**: 3V
- The 3V threshold voltage ensures the stability of the MOSFET in normal operation and reduces the risk of false triggering.
6. **On-resistance (RDS(ON))**:
- **850mΩ @ VGS = 10V**
- The moderate on-resistance enables it to provide stable current conduction with low power loss.
7. **Drain Current (ID)**: 5A
- Supports up to 5A of drain current, making it suitable for applications that need to handle medium currents.
8. **Technology**: Trench
- Using Trench technology, this structure provides low on-resistance and fast switching speed, thereby improving the efficiency and durability of the device.
1. **Package Type**: TO252
- TO252 package provides good heat dissipation, suitable for medium power applications, and has a small size to save space.
2. **Configuration**: Single-channel N-type MOSFET
- Single-channel configuration makes it suitable for a variety of switching and control applications, with flexible design.
3. **Drain-Source Voltage (VDS)**: 200V
- The maximum drain-source voltage of 200V makes it suitable for medium voltage application scenarios.
4. **Gate-Source Voltage (VGS)**: ±20V
- Supports a wide range of gate drive voltages, enhancing the flexibility and safety of switch control.
5. **Threshold Voltage (Vth)**: 3V
- The 3V threshold voltage ensures the stability of the MOSFET in normal operation and reduces the risk of false triggering.
6. **On-resistance (RDS(ON))**:
- **850mΩ @ VGS = 10V**
- The moderate on-resistance enables it to provide stable current conduction with low power loss.
7. **Drain Current (ID)**: 5A
- Supports up to 5A of drain current, making it suitable for applications that need to handle medium currents.
8. **Technology**: Trench
- Using Trench technology, this structure provides low on-resistance and fast switching speed, thereby improving the efficiency and durability of the device.
Domain and module applications：
III. FR200N-VB Application Fields and Modules
1. **Power Management**:
FR200N-VB performs well in power management applications, especially in DC-DC converters and regulators at medium voltages. Its 200V withstand voltage characteristics and low on-resistance ensure efficient power transmission and can effectively reduce power losses.
2. **Switching Power Supply (SMPS)**:
This MOSFET is suitable for efficient switching operations of switching power supplies, especially switching circuits at medium voltages. The fast switching capability and high current carrying capacity of FR200N-VB help improve conversion efficiency and provide stable voltage regulation in power modules.
3. **Industrial Control Circuits**:
In industrial control systems, FR200N-VB can be used in various motor drive and control circuits. Its reliable switching characteristics and high current carrying capacity make it play an important role in load switches and motor control modules in industrial automation.
4. **Lighting system**:
FR200N-VB is also suitable for high-efficiency LED drive circuits and other lighting systems. Its medium voltage and low on-resistance enable it to reduce system power consumption and improve overall efficiency while maintaining high brightness output.
5. **Overcurrent protection circuit**:
This MOSFET can be used in overcurrent protection circuits to provide reliable protection through its excellent switching performance, avoiding damage to circuits and equipment caused by overcurrent, and ensuring the safety and stability of the system.
FR200N-VB is an ideal choice for medium voltage applications due to its high efficiency in power management, switching power supplies, industrial control, lighting systems, and overcurrent protection circuits.
1. **Power Management**:
FR200N-VB performs well in power management applications, especially in DC-DC converters and regulators at medium voltages. Its 200V withstand voltage characteristics and low on-resistance ensure efficient power transmission and can effectively reduce power losses.
2. **Switching Power Supply (SMPS)**:
This MOSFET is suitable for efficient switching operations of switching power supplies, especially switching circuits at medium voltages. The fast switching capability and high current carrying capacity of FR200N-VB help improve conversion efficiency and provide stable voltage regulation in power modules.
3. **Industrial Control Circuits**:
In industrial control systems, FR200N-VB can be used in various motor drive and control circuits. Its reliable switching characteristics and high current carrying capacity make it play an important role in load switches and motor control modules in industrial automation.
4. **Lighting system**:
FR200N-VB is also suitable for high-efficiency LED drive circuits and other lighting systems. Its medium voltage and low on-resistance enable it to reduce system power consumption and improve overall efficiency while maintaining high brightness output.
5. **Overcurrent protection circuit**:
This MOSFET can be used in overcurrent protection circuits to provide reliable protection through its excellent switching performance, avoiding damage to circuits and equipment caused by overcurrent, and ensuring the safety and stability of the system.
FR200N-VB is an ideal choice for medium voltage applications due to its high efficiency in power management, switching power supplies, industrial control, lighting systems, and overcurrent protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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