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FR18N15D-VB Product details
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Product Introduction
FR18N15D-VB is a high-performance N-Channel MOSFET in TO252 package and designed using Trench technology. This MOSFET has a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V, making it suitable for medium and high voltage applications. The gate threshold voltage (Vth) is 2.5V, ensuring that the device can be turned on reliably at lower gate drive voltages. Its on-resistance (RDS(ON)) is only 74mΩ @ VGS=10V and the maximum continuous drain current (ID) is 25.4A, making it an excellent performer in applications requiring high performance and high current handling capabilities.
FR18N15D-VB is a high-performance N-Channel MOSFET in TO252 package and designed using Trench technology. This MOSFET has a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V, making it suitable for medium and high voltage applications. The gate threshold voltage (Vth) is 2.5V, ensuring that the device can be turned on reliably at lower gate drive voltages. Its on-resistance (RDS(ON)) is only 74mΩ @ VGS=10V and the maximum continuous drain current (ID) is 25.4A, making it an excellent performer in applications requiring high performance and high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | 74mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 74mΩ @ VGS=10V
- **Rated current (ID)**: 25.4A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 74mΩ @ VGS=10V
- **Rated current (ID)**: 25.4A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Power Management Systems**: The FR18N15D-VB is ideal for switching applications in medium and high voltage power management systems. The low on-resistance and high current handling capabilities of this MOSFET enable it to effectively reduce power losses and improve system efficiency in switch mode power supplies (SMPS).
2. **Motor Drive**: The FR18N15D-VB is an ideal choice for motor drive applications that require medium and high voltages. It can reliably handle the high currents required during motor startup and operation, and provides good switching performance, thereby improving the overall performance of the motor control system.
3. **Photovoltaic Inverters**: This MOSFET is also suitable for use in photovoltaic inverters to convert and regulate DC voltage from solar panels. Its high voltage and high current handling capabilities enable it to efficiently manage power conversion in solar applications.
4. **Industrial Automation**: The FR18N15D-VB is suitable for load switches and control modules in industrial automation equipment. Its high withstand voltage and low on-resistance characteristics enable stable performance in complex industrial environments.
5. **Uninterruptible Power Supply (UPS)**: In an uninterruptible power supply system, FR18N15D-VB can be used as an efficient switching element to ensure stable and reliable power output during power switching.
Through these application cases, FR18N15D-VB demonstrates its excellent ability to handle medium-high voltage and high current in power electronic systems, making it a reliable choice in a wide range of applications.
1. **Power Management Systems**: The FR18N15D-VB is ideal for switching applications in medium and high voltage power management systems. The low on-resistance and high current handling capabilities of this MOSFET enable it to effectively reduce power losses and improve system efficiency in switch mode power supplies (SMPS).
2. **Motor Drive**: The FR18N15D-VB is an ideal choice for motor drive applications that require medium and high voltages. It can reliably handle the high currents required during motor startup and operation, and provides good switching performance, thereby improving the overall performance of the motor control system.
3. **Photovoltaic Inverters**: This MOSFET is also suitable for use in photovoltaic inverters to convert and regulate DC voltage from solar panels. Its high voltage and high current handling capabilities enable it to efficiently manage power conversion in solar applications.
4. **Industrial Automation**: The FR18N15D-VB is suitable for load switches and control modules in industrial automation equipment. Its high withstand voltage and low on-resistance characteristics enable stable performance in complex industrial environments.
5. **Uninterruptible Power Supply (UPS)**: In an uninterruptible power supply system, FR18N15D-VB can be used as an efficient switching element to ensure stable and reliable power output during power switching.
Through these application cases, FR18N15D-VB demonstrates its excellent ability to handle medium-high voltage and high current in power electronic systems, making it a reliable choice in a wide range of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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