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FR120NC-VB Product details

Product introduction:

FR120NC-VB MOSFET Product Introduction

FR120NC-VB is a high-efficiency N-channel power MOSFET with TO252 package, good heat dissipation performance and compact appearance design. Its drain-source voltage (VDS) is 100V, gate-source voltage (VGS) is ±20V, and turn-on voltage (Vth) is 1.8V. The device has an on-resistance (RDS(ON)) of 114mΩ at a gate voltage of 10V and a maximum drain current (ID) of 15A, suitable for a variety of high-efficiency power management and switching applications. Based on Trench technology, FR120NC-VB provides excellent conduction performance and switching characteristics, suitable for medium-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 15A 114mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 15A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 15A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
FR120NC-VB MOSFET Detailed parameter description

1. **Package type**: TO252
- TO252 package is suitable for applications requiring high heat dissipation performance and compact design, and is often used in high current and high frequency applications.

2. **Configuration**: Single N-channel
- The single N-channel configuration ensures good conductivity and is suitable for switching circuits and power control applications.

3. **Drain-source voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, making it suitable for a variety of medium voltage applications such as DC-DC converters and motor drives.

4. **Gate-source voltage (VGS)**: ±20V
- Supports a gate voltage range of ±20V, providing flexible control capabilities and voltage tolerance.

5. **Turning point voltage (Vth)**: 1.8V
- The turning point voltage is 1.8V, which means that this MOSFET can start to conduct at a low voltage, suitable for low gate drive circuits.

6. **On-resistance (RDS(ON)@VGS=10V)**: 114mΩ
- At a gate voltage of 10V, the on-resistance is 114mΩ, which means lower power consumption can be achieved during switching operations.

7. **Drain current (ID)**: 15A
- The maximum drain current is 15A, making it suitable for medium current applications, ensuring stable and efficient operation of the device.

8. **Technology type**: Trench
- Trench technology provides low on-resistance and efficient switching characteristics, making the FR120NC-VB excel in high-performance and fast-response applications.

Domain and module applications:

FR120NC-VB MOSFET Application Fields and Module Examples

FR120NC-VB MOSFET is widely used in the following fields and modules due to its low on-resistance and high current carrying capacity:

1. **DC-DC Converter**:
- FR120NC-VB is suitable for efficient switching control of DC-DC converters. Its low on-resistance (114mΩ@VGS=10V) can reduce energy loss, improve conversion efficiency, and ensure stable voltage output.

2. **Power Management Module**:
- In the power management system, FR120NC-VB can be used for power switches and voltage regulators. Its high current carrying capacity (15A) and low on-resistance ensure efficient power management and are suitable for use in high-efficiency power supplies (SMPS).

3. **Motor drive applications**:
- In motor drives, FR120NC-VB can be used for efficient switching control of motors. Low on-resistance helps reduce power consumption during motor drive and improves overall system efficiency.

4. **Industrial control equipment**:
- In industrial control equipment, FR120NC-VB can be used for switching circuits and power control modules to ensure reliable operation under medium voltage and current conditions, suitable for automation control and industrial power applications.

5. **Consumer electronics**:
- The device is also widely used in consumer electronic devices, such as power switches in battery management systems and portable electronic devices, providing efficient current control and low power operation.

FR120NC-VB MOSFET, with its excellent performance and reliability, is widely used in various high-efficiency power management and switching control applications, ensuring high efficiency, stability and long life of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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