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FR025-VB Product details
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FR025-VB MOSFET Product Introduction
FR025-VB is a high-performance N-channel power MOSFET in TO252 package. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. The turn-on voltage (Vth) is 1.7V, and the on-resistance (RDS(ON)) is 85mΩ at a gate voltage of 4.5V and 73mΩ at 10V. The maximum drain current (ID) is 18A. FR025-VB uses Trench technology to provide low on-resistance and excellent switching performance, suitable for high-efficiency power management applications.
FR025-VB is a high-performance N-channel power MOSFET in TO252 package. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. The turn-on voltage (Vth) is 1.7V, and the on-resistance (RDS(ON)) is 85mΩ at a gate voltage of 4.5V and 73mΩ at 10V. The maximum drain current (ID) is 18A. FR025-VB uses Trench technology to provide low on-resistance and excellent switching performance, suitable for high-efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FR025-VB MOSFET Detailed parameter description
1. **Package type**: TO252
- TO252 package provides good heat dissipation and compact design, suitable for use in space-constrained applications.
2. **Configuration**: Single N-channel
- Single N-channel configuration is suitable for various switching and power control applications, with good conductivity and switching characteristics.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for medium and low voltage power applications.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate voltage of ±20V, providing flexible control range and high voltage tolerance.
5. **Throw-on voltage (Vth)**: 1.7V
- The turn-on voltage is 1.7V, which means that the MOSFET starts to conduct at this voltage, which is suitable for various low gate voltage control circuit requirements.
6. **On-resistance (RDS(ON)@VGS=4.5V)**: 85mΩ
- When the gate voltage is 4.5V, the on-resistance is 85mΩ, providing lower conductivity, suitable for high-efficiency switching applications.
7. **On-resistance (RDS(ON)@VGS=10V)**: 73mΩ
- When the gate voltage is 10V, the on-resistance is 73mΩ, providing lower conductivity, suitable for applications requiring higher efficiency.
8. **Drain current (ID)**: 18A
- The maximum drain current is 18A, suitable for applications handling medium currents.
9. **Technology Type**: Trench
- Trench technology provides lower on-resistance and efficient switching performance, suitable for power electronics applications.
1. **Package type**: TO252
- TO252 package provides good heat dissipation and compact design, suitable for use in space-constrained applications.
2. **Configuration**: Single N-channel
- Single N-channel configuration is suitable for various switching and power control applications, with good conductivity and switching characteristics.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for medium and low voltage power applications.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate voltage of ±20V, providing flexible control range and high voltage tolerance.
5. **Throw-on voltage (Vth)**: 1.7V
- The turn-on voltage is 1.7V, which means that the MOSFET starts to conduct at this voltage, which is suitable for various low gate voltage control circuit requirements.
6. **On-resistance (RDS(ON)@VGS=4.5V)**: 85mΩ
- When the gate voltage is 4.5V, the on-resistance is 85mΩ, providing lower conductivity, suitable for high-efficiency switching applications.
7. **On-resistance (RDS(ON)@VGS=10V)**: 73mΩ
- When the gate voltage is 10V, the on-resistance is 73mΩ, providing lower conductivity, suitable for applications requiring higher efficiency.
8. **Drain current (ID)**: 18A
- The maximum drain current is 18A, suitable for applications handling medium currents.
9. **Technology Type**: Trench
- Trench technology provides lower on-resistance and efficient switching performance, suitable for power electronics applications.
Domain and module applications：
FR025-VB MOSFET Application Fields and Module Examples
The low on-resistance and high current carrying capacity of FR025-VB MOSFET make it widely used in multiple fields and modules:
1. **DC-DC Converter**:
- In DC-DC converter, FR025-VB can be used for switch control, and its low on-resistance (73mΩ@VGS=10V) can improve conversion efficiency and reduce energy loss, ensuring stable power output.
2. **Power Management System**:
- In power management system, FR025-VB is used for switching and power regulation, and its high current carrying capacity (18A) and low RDS(ON) ensure stable and efficient power management.
3. **Motor Drive**:
- In motor drive applications, FR025-VB can be used for switch control of motors. Low on-resistance helps improve the overall efficiency of the motor drive system and reduce current loss.
4. **Household appliances**:
- Suitable for switching applications in household appliances, such as switch control systems for microwave ovens, washing machines, etc., providing efficient current control and lower power loss.
5. **Industrial automation**:
- In industrial automation equipment, FR025-VB can be used for load switching and power control, ensuring stable and reliable operation in the medium current range.
FR025-VB MOSFET is suitable for use in various high-efficiency switching and power management applications through its high efficiency and stability, ensuring the efficiency and reliability of the system.
The low on-resistance and high current carrying capacity of FR025-VB MOSFET make it widely used in multiple fields and modules:
1. **DC-DC Converter**:
- In DC-DC converter, FR025-VB can be used for switch control, and its low on-resistance (73mΩ@VGS=10V) can improve conversion efficiency and reduce energy loss, ensuring stable power output.
2. **Power Management System**:
- In power management system, FR025-VB is used for switching and power regulation, and its high current carrying capacity (18A) and low RDS(ON) ensure stable and efficient power management.
3. **Motor Drive**:
- In motor drive applications, FR025-VB can be used for switch control of motors. Low on-resistance helps improve the overall efficiency of the motor drive system and reduce current loss.
4. **Household appliances**:
- Suitable for switching applications in household appliances, such as switch control systems for microwave ovens, washing machines, etc., providing efficient current control and lower power loss.
5. **Industrial automation**:
- In industrial automation equipment, FR025-VB can be used for load switching and power control, ensuring stable and reliable operation in the medium current range.
FR025-VB MOSFET is suitable for use in various high-efficiency switching and power management applications through its high efficiency and stability, ensuring the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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