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FR010TM-VB Product details
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FR010TM-VB MOSFET Product Introduction
FR010TM-VB is a high-performance N-channel power MOSFET in TO252 package. This MOSFET supports a drain-source voltage (VDS) of 60V and can withstand a gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 1.7V, and its on-resistance (RDS(ON)) is 85mΩ at a gate voltage of 4.5V and 73mΩ at a gate voltage of 10V. The maximum drain current (ID) of FR010TM-VB is 18A. Using Trench technology, it provides excellent switching performance and low on-resistance, suitable for power management applications requiring high efficiency.
FR010TM-VB is a high-performance N-channel power MOSFET in TO252 package. This MOSFET supports a drain-source voltage (VDS) of 60V and can withstand a gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 1.7V, and its on-resistance (RDS(ON)) is 85mΩ at a gate voltage of 4.5V and 73mΩ at a gate voltage of 10V. The maximum drain current (ID) of FR010TM-VB is 18A. Using Trench technology, it provides excellent switching performance and low on-resistance, suitable for power management applications requiring high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FR010TM-VB MOSFET Detailed parameter description
1. **Package type**: TO252
- The TO252 package provides good heat dissipation and compact size, suitable for use in space-limited applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for various switching and power control applications, with good conductivity and switching characteristics.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for use in medium and low voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate voltage of ±20V, providing flexible control range and high voltage tolerance.
5. **Throw-on voltage (Vth)**: 1.7V
- The turn-on voltage is 1.7V, which means that the MOSFET starts to conduct at this voltage, which is suitable for various low gate voltage control circuit requirements.
6. **On-resistance (RDS(ON)@VGS=4.5V)**: 85mΩ
- When the gate voltage is 4.5V, the on-resistance is 85mΩ, providing lower conductivity, suitable for high-efficiency switching applications.
7. **On-resistance (RDS(ON)@VGS=10V)**: 73mΩ
- When the gate voltage is 10V, the on-resistance is 73mΩ, providing lower conductivity, suitable for applications requiring higher efficiency.
8. **Drain current (ID)**: 18A
- The maximum drain current is 18A, suitable for applications handling medium currents.
9. **Technology Type**: Trench
- Trench technology provides lower on-resistance and efficient switching performance, suitable for power electronics applications.
1. **Package type**: TO252
- The TO252 package provides good heat dissipation and compact size, suitable for use in space-limited applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for various switching and power control applications, with good conductivity and switching characteristics.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, suitable for use in medium and low voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate voltage of ±20V, providing flexible control range and high voltage tolerance.
5. **Throw-on voltage (Vth)**: 1.7V
- The turn-on voltage is 1.7V, which means that the MOSFET starts to conduct at this voltage, which is suitable for various low gate voltage control circuit requirements.
6. **On-resistance (RDS(ON)@VGS=4.5V)**: 85mΩ
- When the gate voltage is 4.5V, the on-resistance is 85mΩ, providing lower conductivity, suitable for high-efficiency switching applications.
7. **On-resistance (RDS(ON)@VGS=10V)**: 73mΩ
- When the gate voltage is 10V, the on-resistance is 73mΩ, providing lower conductivity, suitable for applications requiring higher efficiency.
8. **Drain current (ID)**: 18A
- The maximum drain current is 18A, suitable for applications handling medium currents.
9. **Technology Type**: Trench
- Trench technology provides lower on-resistance and efficient switching performance, suitable for power electronics applications.
Domain and module applications：
FR010TM-VB MOSFET Application Fields and Module Examples
The low on-resistance and medium current handling capability of FR010TM-VB MOSFET make it widely used in multiple fields and modules:
1. **DC-DC Converter**:
- In DC-DC converter, FR010TM-VB can be used for switch control to provide efficient power conversion. Its low on-resistance (73mΩ@VGS=10V) helps to reduce energy loss in the conversion process and improve conversion efficiency.
2. **Power Management System**:
- Suitable for switch and power control in power management systems, such as battery management and power conditioning modules. Its high current carrying capacity (18A) and low RDS(ON) ensure stable power management performance.
3. **Motor Drive**:
- In motor drive applications, FR010TM-VB can be used for switch control of motors. Its low on-resistance enables it to efficiently control motor current, reduce power loss, and improve the overall efficiency of the drive system.
4. **Household appliances**:
- Suitable for switching applications in household appliances, such as switch control of electric heaters and household appliances, it can provide stable switching performance and low power loss.
5. **Industrial automation**:
- In industrial automation systems, FR010TM-VB can be used for medium-power switching applications, such as switch and load control in industrial control equipment, providing reliable current control and switching performance.
These application examples show the flexibility of FR010TM-VB MOSFET in low-medium voltage and medium-current applications, and are particularly suitable for a variety of high-efficiency switching and power control modules.
The low on-resistance and medium current handling capability of FR010TM-VB MOSFET make it widely used in multiple fields and modules:
1. **DC-DC Converter**:
- In DC-DC converter, FR010TM-VB can be used for switch control to provide efficient power conversion. Its low on-resistance (73mΩ@VGS=10V) helps to reduce energy loss in the conversion process and improve conversion efficiency.
2. **Power Management System**:
- Suitable for switch and power control in power management systems, such as battery management and power conditioning modules. Its high current carrying capacity (18A) and low RDS(ON) ensure stable power management performance.
3. **Motor Drive**:
- In motor drive applications, FR010TM-VB can be used for switch control of motors. Its low on-resistance enables it to efficiently control motor current, reduce power loss, and improve the overall efficiency of the drive system.
4. **Household appliances**:
- Suitable for switching applications in household appliances, such as switch control of electric heaters and household appliances, it can provide stable switching performance and low power loss.
5. **Industrial automation**:
- In industrial automation systems, FR010TM-VB can be used for medium-power switching applications, such as switch and load control in industrial control equipment, providing reliable current control and switching performance.
These application examples show the flexibility of FR010TM-VB MOSFET in low-medium voltage and medium-current applications, and are particularly suitable for a variety of high-efficiency switching and power control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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