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FQU9N25TU-VB Product details
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1. FQU9N25TU-VB Product Introduction
FQU9N25TU-VB is a single-channel N-type power MOSFET in TO251 package, designed for medium and low voltage applications. The device has a drain-source voltage (VDS) of up to 250V and a gate-source voltage (VGS) of ±20V. It uses advanced Trench technology, has a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 176mΩ @ VGS = 10V, and supports a maximum drain current of 17A. FQU9N25TU-VB is suitable for applications that require high current carrying capacity and low on-resistance, providing high efficiency and stable switching performance.
FQU9N25TU-VB is a single-channel N-type power MOSFET in TO251 package, designed for medium and low voltage applications. The device has a drain-source voltage (VDS) of up to 250V and a gate-source voltage (VGS) of ±20V. It uses advanced Trench technology, has a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 176mΩ @ VGS = 10V, and supports a maximum drain current of 17A. FQU9N25TU-VB is suitable for applications that require high current carrying capacity and low on-resistance, providing high efficiency and stable switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description of FQU9N25TU-VB
1. **Package type**: TO251
- The package design provides good heat dissipation performance and moderate size, suitable for medium and low voltage applications.
2. **Configuration**: Single-channel N-type MOSFET
- The single-channel design makes it suitable for various medium and low voltage switch applications.
3. **Drain-source voltage (VDS)**: 250V
- Supports medium and low voltage environments and can work stably within the voltage range of 250V.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a wider gate drive voltage and enhances the flexibility of switch control.
5. **Threshold voltage (Vth)**: 3.5V
- Provides a moderate gate turn-on voltage, making the device easy to drive.
6. **On-resistance (RDS(ON))**: 176mΩ @ VGS = 10V
- Low on-resistance provides lower power loss and high efficiency, suitable for applications requiring low on-resistance.
7. **Drain current (ID)**: 17A
- Supports drain current up to 17A, suitable for medium power switching applications.
8. **Technology**: Trench
- Adopts Trench technology, providing low on-resistance and high switching efficiency, suitable for various switching operations.
1. **Package type**: TO251
- The package design provides good heat dissipation performance and moderate size, suitable for medium and low voltage applications.
2. **Configuration**: Single-channel N-type MOSFET
- The single-channel design makes it suitable for various medium and low voltage switch applications.
3. **Drain-source voltage (VDS)**: 250V
- Supports medium and low voltage environments and can work stably within the voltage range of 250V.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a wider gate drive voltage and enhances the flexibility of switch control.
5. **Threshold voltage (Vth)**: 3.5V
- Provides a moderate gate turn-on voltage, making the device easy to drive.
6. **On-resistance (RDS(ON))**: 176mΩ @ VGS = 10V
- Low on-resistance provides lower power loss and high efficiency, suitable for applications requiring low on-resistance.
7. **Drain current (ID)**: 17A
- Supports drain current up to 17A, suitable for medium power switching applications.
8. **Technology**: Trench
- Adopts Trench technology, providing low on-resistance and high switching efficiency, suitable for various switching operations.
Domain and module applications：
3. FQU9N25TU-VB Application Fields and Modules
1. **Power Management System**:
FQU9N25TU-VB is suitable for switch mode power supply (SMPS) and other power management modules. Its high current carrying capacity and low on-resistance make it excellent in power conversion and management, improving the energy efficiency and stability of the system.
2. **Motor Drive**:
In motor control systems, such as inverters and DC motor drives, FQU9N25TU-VB can be used as a switching device. Its high current and low on-resistance characteristics enable it to efficiently drive medium-power motors, ensuring the reliability and efficiency of motor control systems.
3. **Lighting System**:
In high-power lighting control systems, FQU9N25TU-VB can be used as a switch controller, especially in applications that require high-current switching. Its low on-resistance and high current capability ensure the efficient operation and stability of high-power lighting systems.
4. **Switching circuits**:
This MOSFET is suitable for various switching circuits, such as power switches and signal switches. Its low on-resistance and high current capability enable it to provide reliable switching operation and high efficiency in these applications, and is suitable for medium and low power switching operations.
5. **Power converter**:
FQU9N25TU-VB is also suitable for power converter circuits as a medium and low voltage switching device. Its high current and low on-resistance characteristics enable it to provide high efficiency and stable performance in the power conversion process.
Due to its excellent current carrying capacity and low on-resistance, FQU9N25TU-VB provides efficient and reliable switching solutions in many fields such as power management, motor drive, lighting systems, switching circuits, etc.
1. **Power Management System**:
FQU9N25TU-VB is suitable for switch mode power supply (SMPS) and other power management modules. Its high current carrying capacity and low on-resistance make it excellent in power conversion and management, improving the energy efficiency and stability of the system.
2. **Motor Drive**:
In motor control systems, such as inverters and DC motor drives, FQU9N25TU-VB can be used as a switching device. Its high current and low on-resistance characteristics enable it to efficiently drive medium-power motors, ensuring the reliability and efficiency of motor control systems.
3. **Lighting System**:
In high-power lighting control systems, FQU9N25TU-VB can be used as a switch controller, especially in applications that require high-current switching. Its low on-resistance and high current capability ensure the efficient operation and stability of high-power lighting systems.
4. **Switching circuits**:
This MOSFET is suitable for various switching circuits, such as power switches and signal switches. Its low on-resistance and high current capability enable it to provide reliable switching operation and high efficiency in these applications, and is suitable for medium and low power switching operations.
5. **Power converter**:
FQU9N25TU-VB is also suitable for power converter circuits as a medium and low voltage switching device. Its high current and low on-resistance characteristics enable it to provide high efficiency and stable performance in the power conversion process.
Due to its excellent current carrying capacity and low on-resistance, FQU9N25TU-VB provides efficient and reliable switching solutions in many fields such as power management, motor drive, lighting systems, switching circuits, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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