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FQU7P20-VB Product details
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FQU7P20-VB MOSFET Product Introduction
FQU7P20-VB is a high voltage P-type MOSFET with TO251 package and Trench technology. This MOSFET is designed for load switch control in high voltage environment, with a drain-source voltage up to -200V and low on-resistance. It provides stable and reliable performance under high voltage and high current conditions, suitable for high voltage power supply and power conversion applications, especially in situations where high voltage load control is required.
FQU7P20-VB is a high voltage P-type MOSFET with TO251 package and Trench technology. This MOSFET is designed for load switch control in high voltage environment, with a drain-source voltage up to -200V and low on-resistance. It provides stable and reliable performance under high voltage and high current conditions, suitable for high voltage power supply and power conversion applications, especially in situations where high voltage load control is required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | 1000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- 1200mΩ @ VGS = 4.5V
- **Drain current (ID)**: -5A
- **Technology type**: Trench
- **Package type**: TO251
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- 1200mΩ @ VGS = 4.5V
- **Drain current (ID)**: -5A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **High-voltage power switch**: FQU7P20-VB is very suitable for high-voltage power switch. Its high drain-source voltage and low on-resistance enable it to perform well in handling high-voltage power supplies, and can stably control current switching in high-voltage power management systems to ensure system reliability and efficiency.
2. **Power amplifier**: In power amplifier design, this MOSFET can be used as a high-voltage switch to handle the switching needs of high-voltage signals. Its high voltage capability and low on-resistance characteristics enable it to provide stable performance and efficient current control in power amplifier circuits.
3. **Inverter**: FQU7P20-VB is suitable for inverter applications, especially in high-voltage switching tasks that convert DC power to AC power. Its high voltage tolerance and excellent switching characteristics enable it to operate stably in inverter circuits and provide reliable switching control.
4. **Load switch**: In various load switching applications, this MOSFET can be used as a high-voltage load switch. Its high voltage handling capability and low on-resistance enable it to excel in high voltage load control, effectively controlling the load and maintaining system stability.
5. **High Voltage Power Module**: FQU7P20-VB is suitable for use in high voltage power modules, especially those that require high voltage switching. Its high voltage and high current capabilities enable it to effectively perform power switching tasks in these modules, ensuring the normal operation of the modules and efficient energy conversion.
Through these application examples, FQU7P20-VB demonstrates its wide applicability in high voltage environments, suitable for a variety of electronic designs and systems that require high voltage switching and load control.
1. **High-voltage power switch**: FQU7P20-VB is very suitable for high-voltage power switch. Its high drain-source voltage and low on-resistance enable it to perform well in handling high-voltage power supplies, and can stably control current switching in high-voltage power management systems to ensure system reliability and efficiency.
2. **Power amplifier**: In power amplifier design, this MOSFET can be used as a high-voltage switch to handle the switching needs of high-voltage signals. Its high voltage capability and low on-resistance characteristics enable it to provide stable performance and efficient current control in power amplifier circuits.
3. **Inverter**: FQU7P20-VB is suitable for inverter applications, especially in high-voltage switching tasks that convert DC power to AC power. Its high voltage tolerance and excellent switching characteristics enable it to operate stably in inverter circuits and provide reliable switching control.
4. **Load switch**: In various load switching applications, this MOSFET can be used as a high-voltage load switch. Its high voltage handling capability and low on-resistance enable it to excel in high voltage load control, effectively controlling the load and maintaining system stability.
5. **High Voltage Power Module**: FQU7P20-VB is suitable for use in high voltage power modules, especially those that require high voltage switching. Its high voltage and high current capabilities enable it to effectively perform power switching tasks in these modules, ensuring the normal operation of the modules and efficient energy conversion.
Through these application examples, FQU7P20-VB demonstrates its wide applicability in high voltage environments, suitable for a variety of electronic designs and systems that require high voltage switching and load control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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