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FQU7N65C-VB Product details
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FQU7N65C-VB Product Introduction
FQU7N65C-VB is a high voltage N-type MOSFET in TO252 package. This MOSFET adopts SJ_Multi-EPI technology and is designed for high voltage applications, providing excellent voltage tolerance and good switching performance. It is suitable for working in high voltage environments and can effectively handle medium current loads. It is widely used in power management, power conversion and other high voltage circuits.
FQU7N65C-VB is a high voltage N-type MOSFET in TO252 package. This MOSFET adopts SJ_Multi-EPI technology and is designed for high voltage applications, providing excellent voltage tolerance and good switching performance. It is suitable for working in high voltage environments and can effectively handle medium current loads. It is widely used in power management, power conversion and other high voltage circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applications and modules
1. **High voltage power management**: FQU7N65C-VB performs well in high voltage power management applications. It is suitable for high voltage power converters and voltage regulators, and can effectively handle voltages up to 650V, provide stable switching performance, and ensure the reliability of the power system.
2. **Power converter**: In power converters, this MOSFET can be used as a high voltage switch to handle power conversion tasks. It is suitable for high voltage DC-DC converters and other power conversion modules that require high voltage processing, and can maintain high efficiency and stability under high voltage environments.
3. **Power protection circuit**: FQU7N65C-VB can be used in high voltage power protection circuits, such as overvoltage protection and overcurrent protection systems. Its high voltage tolerance ensures the safety and stability of the circuit under high voltage conditions.
4. **Industrial control system**: In industrial control systems, this MOSFET can handle medium current high voltage switching tasks, such as motor drives and automation control systems. Its design guarantees stable and reliable performance in industrial environments.
5. **High Voltage Lighting Systems**: FQU7N65C-VB is also suitable for high voltage lighting systems, such as high voltage fluorescent lamps or LED drivers. It can effectively handle high voltages, ensuring efficient and stable operation of lighting systems.
These application areas demonstrate the versatility of FQU7N65C-VB in high voltage applications, making it a key component in high voltage power management, power conversion and protection systems.
1. **High voltage power management**: FQU7N65C-VB performs well in high voltage power management applications. It is suitable for high voltage power converters and voltage regulators, and can effectively handle voltages up to 650V, provide stable switching performance, and ensure the reliability of the power system.
2. **Power converter**: In power converters, this MOSFET can be used as a high voltage switch to handle power conversion tasks. It is suitable for high voltage DC-DC converters and other power conversion modules that require high voltage processing, and can maintain high efficiency and stability under high voltage environments.
3. **Power protection circuit**: FQU7N65C-VB can be used in high voltage power protection circuits, such as overvoltage protection and overcurrent protection systems. Its high voltage tolerance ensures the safety and stability of the circuit under high voltage conditions.
4. **Industrial control system**: In industrial control systems, this MOSFET can handle medium current high voltage switching tasks, such as motor drives and automation control systems. Its design guarantees stable and reliable performance in industrial environments.
5. **High Voltage Lighting Systems**: FQU7N65C-VB is also suitable for high voltage lighting systems, such as high voltage fluorescent lamps or LED drivers. It can effectively handle high voltages, ensuring efficient and stable operation of lighting systems.
These application areas demonstrate the versatility of FQU7N65C-VB in high voltage applications, making it a key component in high voltage power management, power conversion and protection systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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