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FQU7N20-VB Product details
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FQU7N20-VB Product Introduction
FQU7N20-VB is an N-channel power MOSFET in TO-251 package. It is designed for medium and high voltage switching applications, with a drain-source withstand voltage of 200V and a drain current capability of 8A. FQU7N20-VB uses Trench technology, which reduces the on-resistance by optimizing the semiconductor crystal structure, thereby improving switching efficiency and performance. Its on-resistance is 270mΩ at VGS=10V, making it suitable for applications requiring high efficiency and low conduction losses.
FQU7N20-VB is an N-channel power MOSFET in TO-251 package. It is designed for medium and high voltage switching applications, with a drain-source withstand voltage of 200V and a drain current capability of 8A. FQU7N20-VB uses Trench technology, which reduces the on-resistance by optimizing the semiconductor crystal structure, thereby improving switching efficiency and performance. Its on-resistance is 270mΩ at VGS=10V, making it suitable for applications requiring high efficiency and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
FQU7N20-VB Detailed parameter description
- **Package type**: TO-251
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS=10V
- **Drain current (ID)**: 8A
- **Technology**: Trench (trench technology)
- **Package type**: TO-251
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS=10V
- **Drain current (ID)**: 8A
- **Technology**: Trench (trench technology)
Domain and module applications：
Application fields and module examples
The high withstand voltage and low on-resistance characteristics of FQU7N20-VB make it widely used in many fields and modules:
1. **Power switch**: In power switch applications, FQU7N20-VB can efficiently control power switches. Its 200V withstand voltage capability enables it to reliably handle switching operations in medium and high voltage environments, ensuring the stability and reliability of the power system.
2. **Power converter**: This MOSFET is suitable for switch control in power converters. Low on-resistance helps reduce power consumption and improve conversion efficiency, especially in high-power applications that require frequent switching.
3. **Power management system**: In power management systems, FQU7N20-VB can be used for switching and regulating high-voltage power supplies. Its high withstand voltage and low on-resistance can help the system achieve high efficiency and stability, and is suitable for various power management modules.
4. **Inverter**: In inverter applications, FQU7N20-VB can effectively manage power switches and handle high voltage conversion tasks. Its Trench technology provides excellent switching performance, suitable for high voltage inverter modules.
5. **Electric Vehicles and High Voltage Equipment**: Due to its 200V withstand voltage capability, FQU7N20-VB is suitable for switch control in electric vehicles and other high voltage equipment. Its efficient switching characteristics can support the management of high voltage currents and improve the overall efficiency and performance of the system.
With its high voltage tolerance and low on-resistance, FQU7N20-VB provides a reliable solution for a variety of high voltage and high-performance applications, ensuring efficient operation and stability of the system.
The high withstand voltage and low on-resistance characteristics of FQU7N20-VB make it widely used in many fields and modules:
1. **Power switch**: In power switch applications, FQU7N20-VB can efficiently control power switches. Its 200V withstand voltage capability enables it to reliably handle switching operations in medium and high voltage environments, ensuring the stability and reliability of the power system.
2. **Power converter**: This MOSFET is suitable for switch control in power converters. Low on-resistance helps reduce power consumption and improve conversion efficiency, especially in high-power applications that require frequent switching.
3. **Power management system**: In power management systems, FQU7N20-VB can be used for switching and regulating high-voltage power supplies. Its high withstand voltage and low on-resistance can help the system achieve high efficiency and stability, and is suitable for various power management modules.
4. **Inverter**: In inverter applications, FQU7N20-VB can effectively manage power switches and handle high voltage conversion tasks. Its Trench technology provides excellent switching performance, suitable for high voltage inverter modules.
5. **Electric Vehicles and High Voltage Equipment**: Due to its 200V withstand voltage capability, FQU7N20-VB is suitable for switch control in electric vehicles and other high voltage equipment. Its efficient switching characteristics can support the management of high voltage currents and improve the overall efficiency and performance of the system.
With its high voltage tolerance and low on-resistance, FQU7N20-VB provides a reliable solution for a variety of high voltage and high-performance applications, ensuring efficient operation and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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