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FQU6P25-VB Product details

Product introduction:

1. FQU6P25-VB MOSFET Product Introduction

FQU6P25-VB is a single P-channel power MOSFET packaged in TO251, designed for medium and high voltage applications. This MOSFET supports a drain-source voltage (VDS) of -200V and a gate-source voltage (VGS) of ±20V, suitable for applications requiring high voltage load switching. The threshold voltage (Vth) is -2.5V, ensuring effective conduction at a lower gate voltage. The on-resistance (RDS(ON)) of FQU6P25-VB is 1000mΩ@VGS=10V, supporting a maximum drain current of -5A. Using Trench technology, this MOSFET provides excellent switching performance and low power consumption, making it ideal for high voltage switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-P -200V -2.5V -5A 1000mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-P -200V -2.5V -5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-P -200V -2.5V -5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-P
2. FQU6P25-VB MOSFET Detailed parameter description

- **Package type**: TO251
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1200mΩ @ VGS=4.5V
- 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: -5A
- **Technology**: Trench technology
- **Maximum power consumption**: 25W (max)
- **Junction temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 1200pF
- **Reverse recovery time (trr)**: 150ns

Domain and module applications:

3. FQU6P25-VB MOSFET Application Fields and Module Examples

1. **High-voltage Power Switch**: FQU6P25-VB is very suitable for high-voltage power switch modules. Its high voltage withstand capability and low on-resistance make it excellent in load switching and widely used in high-voltage power management, power converters and medium- and high-voltage power systems.

2. **DC-DC Converter**: In DC-DC converter applications, FQU6P25-VB is able to handle the switching needs of high-voltage loads. It is suitable for high-voltage buck and boost converters, ensuring efficient power conversion and stable power output, and is widely used in power modules, voltage stabilization circuits, etc.

3. **Motor Drive Circuit**: Despite its small drain current, FQU6P25-VB can still be used in some high-voltage motor drive circuits. Especially in motor drive applications that require high-voltage loads, it can effectively manage motor switching.

4. **Load Switch and Protection Circuit**: FQU6P25-VB performs well in load switch and protection circuits. Its high voltage withstand capability and reliable switching performance make it suitable for overvoltage protection, load switch and short circuit protection circuits, and is widely used in industrial control and automation equipment.

5. **Power Management System**: In the power management system, FQU6P25-VB can effectively control current and voltage, and is suitable for high voltage power distribution and management modules. It can be used in battery management systems, power supply systems and other power management applications to provide stable power control.

These application examples show the wide applicability of FQU6P25-VB MOSFET in high voltage and power management, especially in situations where high voltage withstand capability and efficient switching performance are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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