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FQU6N50C-VB Product details
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FQU6N50C-VB MOSFET: Product Introduction
The FQU6N50C-VB is a high-performance N-channel MOSFET in TO251 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 650V, suitable for high voltage environments. The on-resistance (RDS(ON)) of this MOSFET is 950mΩ@ VGS = 10V, and it can provide up to 5A of continuous drain current. Using SJ_Multi-EPI technology, this MOSFET provides excellent switching performance and high efficiency, suitable for switching applications requiring high voltage and medium current.
The FQU6N50C-VB is a high-performance N-channel MOSFET in TO251 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 650V, suitable for high voltage environments. The on-resistance (RDS(ON)) of this MOSFET is 950mΩ@ VGS = 10V, and it can provide up to 5A of continuous drain current. Using SJ_Multi-EPI technology, this MOSFET provides excellent switching performance and high efficiency, suitable for switching applications requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package:** TO251
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 650V
- **VGS (gate-source voltage):** ±30V
- **Vth (threshold voltage):** 3.5V
- **RDS(ON) (on-resistance):** 950mΩ @ VGS = 10V
- **ID (continuous drain current):** 5A
- **Technology:** SJ_Multi-EPI
- **Package:** TO251
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 650V
- **VGS (gate-source voltage):** ±30V
- **Vth (threshold voltage):** 3.5V
- **RDS(ON) (on-resistance):** 950mΩ @ VGS = 10V
- **ID (continuous drain current):** 5A
- **Technology:** SJ_Multi-EPI
Domain and module applications：
Application Examples
FQU6N50C-VB MOSFET has a wide range of applications in the following fields and modules:
1. **High-voltage switching power supply:** Due to its high voltage withstand capability of 650V, FQU6N50C-VB is suitable for high-voltage switching power supply. It can work stably in a high voltage environment and is suitable for power converters and power management systems to improve the efficiency and stability of the system.
2. **Motor control:** In high-voltage motor control applications, this MOSFET can be used as a switching element. Its high voltage withstand capability and medium current handling capability make it suitable for motor drive and control, especially in high-voltage motor systems.
3. **Power converter:** FQU6N50C-VB is suitable for various power converters, such as inverters and high-voltage DC-DC converters. Its high voltage capability and low on-resistance enable it to effectively handle power conversion and improve the overall efficiency of the system.
4. **Load switch and protection circuit:** This MOSFET can also be used as a switching element in high voltage load switch and protection circuit. It can effectively control high voltage loads and provide reliable performance when protection circuit is needed, ensuring the stability and safety of the system.
FQU6N50C-VB MOSFET has a wide range of applications in the following fields and modules:
1. **High-voltage switching power supply:** Due to its high voltage withstand capability of 650V, FQU6N50C-VB is suitable for high-voltage switching power supply. It can work stably in a high voltage environment and is suitable for power converters and power management systems to improve the efficiency and stability of the system.
2. **Motor control:** In high-voltage motor control applications, this MOSFET can be used as a switching element. Its high voltage withstand capability and medium current handling capability make it suitable for motor drive and control, especially in high-voltage motor systems.
3. **Power converter:** FQU6N50C-VB is suitable for various power converters, such as inverters and high-voltage DC-DC converters. Its high voltage capability and low on-resistance enable it to effectively handle power conversion and improve the overall efficiency of the system.
4. **Load switch and protection circuit:** This MOSFET can also be used as a switching element in high voltage load switch and protection circuit. It can effectively control high voltage loads and provide reliable performance when protection circuit is needed, ensuring the stability and safety of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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