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FQU6N40C-VB Product details
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Product Introduction
FQU6N40C-VB is a high voltage N-channel MOSFET with TO-251 package type. The device is designed to handle drain-source voltage (VDS) up to 650V and can withstand gate-source voltage (VGS) of ±30V. FQU6N40C-VB adopts SJ_Multi-EPI technology, providing good high-voltage performance and reliable switching characteristics. Although its on-resistance is 950mΩ at VGS of 10V, its high voltage tolerance and stability make it perform well in high-voltage applications. This MOSFET can handle currents up to 5A and is suitable for applications requiring high voltage tolerance.
FQU6N40C-VB is a high voltage N-channel MOSFET with TO-251 package type. The device is designed to handle drain-source voltage (VDS) up to 650V and can withstand gate-source voltage (VGS) of ±30V. FQU6N40C-VB adopts SJ_Multi-EPI technology, providing good high-voltage performance and reliable switching characteristics. Although its on-resistance is 950mΩ at VGS of 10V, its high voltage tolerance and stability make it perform well in high-voltage applications. This MOSFET can handle currents up to 5A and is suitable for applications requiring high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO-251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO-251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **High voltage switching power supply**: The 650V drain-source voltage of FQU6N40C-VB makes it suitable for high voltage switching power supply. In these applications, this MOSFET can be used to control high voltage loads and realize switching and regulation of high voltage power supply.
2. **High voltage inverter**: In high voltage inverter system, FQU6N40C-VB can stably handle high voltage current and is suitable for switching control of inverter. Its high voltage capability and low on-resistance help improve the efficiency and reliability of inverter system.
3. **High voltage power management system**: This MOSFET can be used in high voltage power management modules, such as high voltage battery management system and high voltage power supply module. In these applications, it can handle high voltage loads and provide stable switching performance.
4. **High voltage protection circuit**: FQU6N40C-VB is suitable for high voltage protection circuit, such as overvoltage protection and current limiting circuit. Its high voltage tolerance protects the system from overvoltage and other electrical faults.
5. **High Voltage Power Amplifier**: In high voltage power amplifiers, this MOSFET can be used as a switching element to handle high voltage signals. Its high voltage handling capability and stability make it excellent in high voltage power amplifier applications.
These application examples show the suitability of FQU6N40C-VB in high voltage and high current environments. Although its on-resistance is high, its high voltage tolerance and stability make it perform well in high voltage applications.
1. **High voltage switching power supply**: The 650V drain-source voltage of FQU6N40C-VB makes it suitable for high voltage switching power supply. In these applications, this MOSFET can be used to control high voltage loads and realize switching and regulation of high voltage power supply.
2. **High voltage inverter**: In high voltage inverter system, FQU6N40C-VB can stably handle high voltage current and is suitable for switching control of inverter. Its high voltage capability and low on-resistance help improve the efficiency and reliability of inverter system.
3. **High voltage power management system**: This MOSFET can be used in high voltage power management modules, such as high voltage battery management system and high voltage power supply module. In these applications, it can handle high voltage loads and provide stable switching performance.
4. **High voltage protection circuit**: FQU6N40C-VB is suitable for high voltage protection circuit, such as overvoltage protection and current limiting circuit. Its high voltage tolerance protects the system from overvoltage and other electrical faults.
5. **High Voltage Power Amplifier**: In high voltage power amplifiers, this MOSFET can be used as a switching element to handle high voltage signals. Its high voltage handling capability and stability make it excellent in high voltage power amplifier applications.
These application examples show the suitability of FQU6N40C-VB in high voltage and high current environments. Although its on-resistance is high, its high voltage tolerance and stability make it perform well in high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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